Semiconductor laser light source module based on planar waveguide combiner and manufacturing method

Abstract

The invention relates to a semiconductor laser light source module based on a planar waveguide combiner, and the module comprises a bearing substrate which is provided with N electrodes; N semiconductor lasers, wherein bare chips on the semiconductor lasers are respectively bonded with the corresponding electrodes through leads; an optical waveguide combining structure sequentially comprising a waveguide layer, a reflection dielectric layer and a bonding layer from top to bottom; the waveguide layer being provided with a waveguide circuit pattern, the waveguide circuit pattern comprising N light inlets and one light outlet, and the N light inlets being in one-to-one correspondence with light outlet points of bare chips on the N semiconductor lasers; and a covering box. The invention further provides two manufacturing methods of the semiconductor laser light source module based on the planar waveguide combiner. According to the semiconductor laser light source module based on the planar waveguide type combiner provided by the invention, the large-aperture waveguide is prepared by a method of directly etching on the wafer, so that the laser coupling difficulty is greatly reduced, and the size of a device is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of wave combiners, in particular to a semiconductor laser light source module and a manufacturing method based on a planar waveguide type wave combiner. Background technique [0002] With the continuous development of technology, traditional non-integrated discrete optical component systems have gradually become difficult to adapt to the development needs of contemporary information optoelectronic technology due to their shortcomings such as large volume, heavy weight, poor stability, and difficult beam coupling and alignment. In the past ten years, photonic integration based on silicon-on-insulator (Silicon-On-Insulator, SOI), lithium niobate materials, and silicon-based silicon dioxide platforms has developed rapidly. The key lies in large-area substrates and mature complementary metal oxides. Semiconductor (Complementary Metal Oxide Semiconductor, CMOS) processes are compatible, so integrated photonic dev...

AI Technical Summary

Problems solved by technology

The structure of the optical fiber fusion tapered multiplexer is relatively simple, but it is bulky, and due to the axial loss, there are certain problems in the efficiency of the multiplexing; the structure of the spatial optical multiplexer is complex, and the adjustment is difficult. At the same time, the requirements for environmental stability are also very high, so that the overall cost is high and the volume is large; while the general PLC multiplexer is difficult to prepare high-efficiency large-channel waveguides due to the limitation of the deposition process, and the coupling is extremely difficult Big

[0004] Patent CN102967898A discloses a waveguide integrated photonic crystal combiner based on a Y-shaped curved structure, which uses a lithium niobate photonic crystal with a triangular lattice medium background air hole structure,

Images