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Narrow-linewidth metal type low-voltage pressure-sensitive device and preparation method for electrofluid printing

A metal type, narrow line width technology, applied in varistors, resistance manufacturing, circuits, etc., can solve the problems of destroying nano-powder agglomeration, electrical performance is difficult to guarantee, etc., to achieve good microscopic uniformity, small leakage current, non-toxic The effect of large linear coefficients

Active Publication Date: 2021-08-06
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, powder ball milling is not enough to completely destroy the agglomeration of nano-powders, and two (multiple) powders are still inhomogeneous microscopically, so its electrical properties are difficult to guarantee

Method used

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  • Narrow-linewidth metal type low-voltage pressure-sensitive device and preparation method for electrofluid printing
  • Narrow-linewidth metal type low-voltage pressure-sensitive device and preparation method for electrofluid printing
  • Narrow-linewidth metal type low-voltage pressure-sensitive device and preparation method for electrofluid printing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] In this embodiment, a nano-silver varistor based on electrofluid printing is provided, and the preparation method is as follows:

[0037] (1) Substrate cleaning: Put the substrate into an ultrasonic cleaner, and use recovered isopropanol, recovered tetrahydrofuran, alkaline cleaning solution, deionized water, and isopropanol to vibrate ultrasonically for 10 minutes, respectively.

[0038] (2) Substrate drying: put the cleaned n-type silicon plate into an oven, and dry it at 70°C.

[0039] (3) Printing nano-silver varistors with narrow line width: use electrofluidic printer SIJ-S150 to electrofluidically print nano-silver varistors with nanosilver sol; electrofluidic printing parameters: voltage 700V, voltage waveform is triangular wave, voltage frequency 1000Hz, moving speed 5mm / s. Such as figure 1 As shown, the main line is 100um in length, 2um in width, and 100nm in height. The minor part is 20um in diameter and 100nm high.

[0040](4) Curing: Put the printed piez...

Embodiment 2

[0042] The difference from Example 1 is that the curing temperature is 300°C.

Embodiment 3

[0044] The difference from Example 1 is that the curing temperature is 450°C.

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Abstract

The invention discloses a narrow-linewidth metal type low-voltage pressure-sensitive device and a preparation method for electrofluid printing. The pressure-sensitive device comprises the components of nano-silver particles, ethyl cellulose and polyvinylpyrrolidone. The pressure-sensitive device comprises a main body part and two external contacts, wherein the external contacts are located at two ends of the main body part. The preparation method comprises the following steps of cleaning and drying a substrate, then printing nano-silver sol on the substrate by adopting electrofluid printing to form a pressure-sensitive device, and annealing and curing the printed pressure-sensitive device to obtain the narrow-linewidth metal type low-voltage pressure-sensitive device. The piezo-resistance of the pressure-sensitive device is stable, the nonlinear coefficient is relatively large, the leakage current is small, and the microscopic uniformity is relatively good; and the process is simple, and the sintering temperature is low.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and relates to a metal-type low-voltage pressure-sensitive device with a narrow line width and a preparation method for electrofluid printing. Background technique [0002] "Varistor" is a resistive device with nonlinear volt-ampere characteristics. It is mainly used for voltage clamping when the circuit is subjected to overvoltage, and absorbs excess current to protect sensitive devices. At present, the resistor body material of the varistor is a semiconductor, so it is a variety of semiconductor resistors. Now widely used "zinc oxide" (ZnO) varistor, its main material is composed of divalent element zinc (Zn) and hexavalent element oxygen (O). At present, the main way to improve the performance of zinc oxide varistors is to obtain high-performance ZnO varistors by improving the formulation and preparation process of varistor material powders. The grain size and microscopic unifor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/10H01C17/00
CPCH01C7/10H01C17/00
Inventor 姚日晖梁宏富宁洪龙钟锦耀刘泰江张旭张观广梁志豪杨跃鑫彭俊彪
Owner SOUTH CHINA UNIV OF TECH
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