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Super-radiation light-emitting diode chip integrated with backlight detector, and preparation method thereof

A technology of superluminescent light-emitting diodes, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problems of increased ripple coefficient of superluminescent light-emitting diodes, suppress optical feedback, reduce back-end reflectivity increases, The effect of improving the ripple factor

Active Publication Date: 2021-08-06
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a superluminescent light-emitting diode chip integrated with a backlight detector and its preparation method, so as to solve the problem of increased ripple coefficient of superluminescent light-emitting diodes caused by isolation grooves in the prior art

Method used

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  • Super-radiation light-emitting diode chip integrated with backlight detector, and preparation method thereof
  • Super-radiation light-emitting diode chip integrated with backlight detector, and preparation method thereof
  • Super-radiation light-emitting diode chip integrated with backlight detector, and preparation method thereof

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Embodiment 1

[0034] like Figure 1-3 As shown, a structural diagram of a preferred embodiment of an ultra-radiating light emitting diode chip of an integrated backlight detector, including an epitaxial piece 100, and a lower end surface of the epitaxial sheet 100 is sputtered with an N-plane electrode layer 21. The upper end surface of the formation piece 100 is sputtered with a P-plane electrode layer including an active region electrode 22 and a backlight detection zone electrode 23. The two ends of the ultra-radiation light emitting diode chip are vapor deposition film 3, which is used to increase light transmittance, reduce reflected light of the surface of the ultra-radiation light emitting diode chip, further inhibit F-P oscillation.

[0035] The upper end surface of the epitaxial piece 100 is provided with a ridge waveguide 4 in a preset angle for weight loss, inhibiting the FP oscillation; in the present embodiment, the preset angle is a ridge waveguide 4 with respect to the epitaxial. ...

Embodiment 2

[0038] like Figure 4 As shown, a flow chart of a preparation method of an ultra-radiation light emitting diode chip of an integrated backlight detector according to the present invention includes the following steps:

[0039] S1: Growth of the epiton.

[0040] The N-INP buffer layer 102, N-INP spacer layer 104, N-AlGainas transition layer 105, N-Alinas lower limit layer 106, I- Algainas underwater wave layer 107, Algainas strain compensated multi-quantum well layer 108, I-algainas upper waveguide layer 109, p-alinas first upper limit layer 110, P-INP second upper limit layer 111, P-INGAASP corrosion termination Layer 112, P-INP third upper limit layer 113, P-INGAASP smooth layer 114 and P-INGAAS contact layer 115, result Figure 5 The epitaxial sample shown.

[0041] S2: Forming a ridge waveguide.

[0042] A layer of silica media film is deposited on the surface of the epitaxial sheet sample obtained by step S1; then the ridge waveguide 4 is photolithographed on the silica medium f...

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Abstract

The invention discloses a super-radiation light-emitting diode chip integrated with a backlight detector, and a preparation method thereof. The super-radiation light-emitting diode chip comprises an epitaxial wafer, an N-surface electrode layer is sputtered on the lower end surface of the epitaxial wafer, a P-surface electrode layer is sputtered on the upper end surface of the epitaxial wafer, and the P-surface electrode layer comprises an active region electrode and a backlight detection region electrode. A ridge waveguide is arranged on the upper end face of the epitaxial wafer according to a preset angle, an isolation groove is further formed in the upper end face of the epitaxial wafer in the width direction of the epitaxial wafer to form an isolation area, the active area electrode is located on one side of the isolation groove to form an active area, and the backlight detection area is located on the other side of the isolation groove to form a backlight detection area. A passive absorption area is arranged between the active region and the isolation area. The back-end reflectivity of the chip can be effectively reduced, optical feedback can be suppressed, the ripple coefficient of the super-radiation light-emitting diode can be improved, and the influence of the increase of the back-end reflectivity caused by the increase of the isolation groove can be effectively reduced.

Description

Technical field [0001] The present invention relates to the field of light emitting diodes, and more particularly to an ultraviation light emitting diode chip and a preparation method of integrated backlight detectors. Background technique [0002] Ultraflective light emitting diode is a spontaneous radiation-amplified optoelectronic device having high output power, wide spectral width, shortness of coherent length, and widely used in fiber optic current transformers, fiber optic gyro, fiber optic coherence tomography. Ultraflective light emitting diode chip is a slowly attenuation of the output optical power during long-term use, and it is necessary to monitor its power. It is usually monitored in real time to monitor the source output optical power in real time, and adjust the driving current to maintain a constant power output. The program requires loss of partial optical power, high cost; the traditional method of the chip rear end package detector chip can not meet the devel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22H01S5/343H01S5/042
CPCH01S5/2202H01S5/343H01S5/04256
Inventor 周帅庞福滨唐祖荣袁宇波周勇戴锋段利华杨洋
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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