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Polyimide porous membrane and preparation method thereof

A technology of polyimide and porous membrane, which is applied in the field of polymer dielectric material preparation, can solve the problems of poor thermal stability, poor dimensional stability, and uneven pore distribution, and achieve good thermal stability and dimensional stability Good, dimensional stability and high performance effect

Active Publication Date: 2021-08-13
SHANGHAI RUIJI NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Ordinary polyimide films have a dielectric constant of 3 to 4, which can no longer meet the needs of integrated circuits at the present stage, while traditional polyimide porous films have low dielectric constants, but their pores are not uniformly distributed, and thermal Poor stability, poor dimensional stability

Method used

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  • Polyimide porous membrane and preparation method thereof
  • Polyimide porous membrane and preparation method thereof
  • Polyimide porous membrane and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0071] (1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g of NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.

[0072] (2) The obtained polyamic acid solution is added to nano-SiO with an average particle diameter of 30nm 2 (Add 0.05g SiO per 100g polyamic acid 2 ), mixed evenly and defoamed, after defoaming, coated on a clean glass plate with an automatic film coating machine, the thickness of the coating film was 300 μm, placed the glass plate in an oxygen-free oven, and used stepwise heating (heating to 100°C for heat preservation 30min, then raise the temperature to 110°C for 30min, then raise the temperature to 120°C for 60min, then raise the temperature to 140°C for 60min...

Embodiment 2

[0074] (1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g of NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.

[0075] (2) The obtained polyamic acid solution is added to nano-SiO with an average particle diameter of 30nm 2 (Add 0.05g SiO per 100g polyamic acid 2 ), mixed evenly and defoamed, after defoaming, coated on a clean glass plate with an automatic film coating machine, the thickness of the coating film was 300 μm, placed the glass plate in an oxygen-free oven, and used stepwise heating (heating to 100°C for heat preservation 30min, then raise the temperature to 110°C for 30min, then raise the temperature to 120°C for 60min, then raise the temperature to 140°C for 60min...

Embodiment 3

[0077] (1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g of NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.

[0078] (2) The obtained polyamic acid solution is added into nano-SiO with an average particle diameter of 5nm 2 (Add 0.05g SiO per 100g polyamic acid 2 ), mixed evenly and defoamed, after defoaming, coated on a clean glass plate with an automatic film coating machine, the thickness of the coating film was 300 μm, placed the glass plate in an oxygen-free oven, and used stepwise heating (heating to 100°C for heat preservation 30min, then raise the temperature to 110°C for 30min, then raise the temperature to 120°C for 60min, then raise the temperature to 140°C for 60mi...

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Abstract

The invention relates to the technical field of polymer dielectric material preparation, and discloses a polyimide porous membrane preparation method, which comprises: dissolving two different aromatic diisocyanates in a polar solvent, adding aromatic dianhydride, fully stirring to obtain an intermediate product polyamide acid, adding a pore-forming agent to the polyamide acid, and uniformly mixing, and defoaming, coating on a glass plate, carrying out heat treatment, and finally removing the pore-forming agent to obtain the polyimide porous membrane. Through the special method, the high-performance polyimide porous membrane with low dielectric constant, uniform pore distribution, good thermal stability and good dimensional stability is obtained, so that the signal transmission speed can be increased, the signal interference and inductive coupling are reduced, and the polyimide porous membrane can be better applied to the integrated circuit industry.

Description

technical field [0001] The invention relates to the technical field of polymer dielectric material preparation, in particular to a polyimide porous film and a preparation method thereof. Background technique [0002] With the rapid development of science and technology, the trend of the integrated circuit industry towards low-dimensional, large-scale and even ultra-large-scale integration has become increasingly obvious. In order to speed up signal transmission, reduce signal interference and inductive coupling, materials with low dielectric constant must be used. For a new generation of dielectric materials, the dielectric constant is required to be below 2.2. Polyimide has become the most promising polymer dielectric material because of its outstanding thermal and mechanical properties. Since the dielectric constant of ordinary polyimide is usually between 3 and 4, the synthesis of polyimide materials with lower dielectric constant has become a research hotspot. [0003...

Claims

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Application Information

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IPC IPC(8): C08J9/26C08J9/08C08J5/18C08L79/08
CPCC08J9/26C08J9/08C08J5/18C08J2379/08C08J2201/044C08J2201/0442C08J2203/02Y02E60/10
Inventor 程跃高琦吕凯邱长泉虞少波蔡裕宏
Owner SHANGHAI RUIJI NEW MATERIAL TECH CO LTD
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