Power IGZO thin film transistor and preparation method thereof
A thin-film transistor and power technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as increased on-resistance, reduced current capability, and inability to simultaneously improve the voltage withstand capability and current capability of power devices. Achieve the effect of reducing on-resistance, enhancing controllability, and compensating for current density
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[0028] In order to solve the above problems, the preparation method of the power IGZO thin film transistor of the present invention is as follows:
[0029] The power IGZO thin film transistor of the present invention includes: obtaining a substrate; a gate electrode layer is formed on the substrate; a gate insulating layer is covered on the gate electrode layer; a source is formed on the upper side of the gate insulating layer. On the other side, a drain is formed; the IGZO active layer is covered on the source, and the AL film cover layer is formed on the IGZO active layer.
[0030] As one embodiment, when the deposition source and the drain metal electrode are designed, the gate electrode layer and the source electrode are 2 μm by the mask graphic, and the longitudinal offset length is 2 μm.
[0031] As one of the embodiments, the Al film cover layer is provided on the gate electrode layer and the power layer between the IGZO between the leakage regions, and has 1 μm overlapping...
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