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A kind of electroplating copper-copper pyrovinate composite interconnect material and silicon substrate and preparation method

A technology for interconnecting materials and silicon substrates, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., and can solve the problems of high electrical conductivity and low thermal expansion coefficient of connecting materials.

Active Publication Date: 2022-07-29
JIHUA LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an electroplated copper-copper pyrovanate composite interconnection material and a silicon substrate and a preparation method, aiming at solving the problem of high electrical conductivity and low The problem of incompatibility of thermal expansion coefficient

Method used

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  • A kind of electroplating copper-copper pyrovinate composite interconnect material and silicon substrate and preparation method
  • A kind of electroplating copper-copper pyrovinate composite interconnect material and silicon substrate and preparation method
  • A kind of electroplating copper-copper pyrovinate composite interconnect material and silicon substrate and preparation method

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Embodiment 1

[0051] 0.02mol / L ammonium vanadate solution was titrated into the electroplating solution without electricity, and it was found that with the addition of ammonium vanadate, flocculent precipitates appeared in the electroplating solution. Among them, the formula of electroplating solution is 200g / L Cu 2 SO 4 ·5H 2 O, 55g / L H 2 SO 4 , 100 mg / L CuCl 2 , the plating temperature is 50 °C. Collect and dry the flocs at the bottom of the cup and observe by SEM, the results are as follows figure 1 shown. from figure 1 It can be seen that the precipitates are distributed in granular form, the particle size is about 200 nm, and the size distribution is uniform; from figure 2 It can be seen that the precipitate is mainly Cu as determined by XRD diffraction 3 V 2 O 7 (OH) 2 and CuSO 4 . This shows that the titration of ammonium vanadate in the plating solution can effectively generate β-Cu 2 V 2 O 7 Precursor Cu required 3 V 2 O 7 (OH) 2 particles.

Embodiment 2

[0053] Cu / β-Cu on silicon substrates 2 V2 O 7 Preparation of composite materials:

[0054] Using a current density of 50mA / cm 2 A DC power supply was used to plate Cu on the silicon substrate, and at the same time, the ammonium vanadate solution was titrated into the plating solution, the concentration of the ammonium vanadate solution was 0.02 mol / L, and the titration rate was 1.5 mL / min. Among them, the formula of electroplating solution is 200g / LCu 2 SO 4 ·5H 2 O, 55g / L H 2 SO 4 , 100 mg / L CuCl 2 , the plating temperature is 50 °C.

[0055] After the plating is completed, the samples are heat treated at 600°C and 400°C respectively for 2h. The actual results are shown in the figure. image 3 and Figure 4 Finally, the XRD phase analysis of the composite coating was carried out, and the obtained results were as follows Figure 5 shown.

[0056] from Figure 5 It can be seen that after heat treatment at 400 °C, the Cu 3 V 2 O 7 (OH) 2 Decomposes into β-Cu 2 ...

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Abstract

The invention discloses an electroplating copper-copper pyrovinate composite interconnection material, a silicon substrate and a preparation method. The preparation method of the electroplating copper-copper pyrovinate composite interconnection material comprises the following steps: while performing electroplating, Dropwise addition of NH to the plating solution 4 VO 3 solution, NH 4 VO 3 with CuSO in the plating solution 4 The reaction produces Cu 3 V 2 O 7 (OH) 2 , Cu 3 V 2 O 7 (OH) 2 Form Cu / Cu with copper 3 V 2 O 7 (OH) 2 ; for Cu / Cu 3 V 2 O 7 (OH) 2 heat treatment to make Cu 3 V 2 O 7 (OH) 2 Decomposition into β-Cu 2 V 2 O 7 , to obtain Cu / β‑Cu 2 V 2 O 7 . The invention aims at the expansion problem caused by the large difference between the thermal expansion coefficients of copper and silicon in the through-silicon hole, and utilizes the negative thermal expansion β-Cu 2 V 2 O 7 It forms composite interconnection with Cu, regulates the thermal expansion coefficient of the material, improves the reliability of TSV and prolongs its service life.

Description

technical field [0001] The invention relates to the field of electronic packaging, and mainly relates to an electroplating copper-copper pyrovinate composite interconnect material, a silicon substrate and a preparation method. Background technique [0002] With the rapid development of semiconductor fabrication technology, the size of transistors is approaching the physical limit, and problems such as interconnect delays have become more and more serious, and through-silicon via three-dimensional packaging technology has emerged. Through Silicon Via (TSV) refers to the technology of fabricating vertical through holes on a silicon substrate and filling them with conductive materials to achieve vertical interconnection. TSV mainly uses Cu as the interconnect material, and uses electroplating to fill Cu into the holes. Cu has high electrical conductivity and excellent mechanical properties. At present, the TSV manufacturing technology is very mature, but its reliability proble...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/76879H01L21/76898H01L23/481
Inventor 崔传禹徐龙刘伟赵聪聪杨浩夏大彪杨光猛王娜
Owner JIHUA LAB
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