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Single-layer or several-single-layer CrTe3 film and preparation method thereof

A thin-film and single-layer technology, applied in the direction of metal selenide/telluride, binary selenium/telluride compounds, etc., can solve the problems of high preparation difficulty and limited purity of bulk materials

Pending Publication Date: 2021-08-27
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For CrTe 3 Although the bulk material is prepared, the preparation difficulty of the bulk material itself is extremely high, and the purity of the prepared bulk material is limited, so the two-dimensional CrTe 3 Material so far undiscovered

Method used

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  • Single-layer or several-single-layer CrTe3 film and preparation method thereof
  • Single-layer or several-single-layer CrTe3 film and preparation method thereof
  • Single-layer or several-single-layer CrTe3 film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] The specific implementation steps are as follows:

[0057] Step 1: Select high-purity Cr and Te element powders, that is, use Cr with a purity of 99.9999% and Te powder with a purity of 99.9999%, and load them into the K-cell evaporation source respectively.

[0058] Step 2: Insert the Cr and Te sources into the vacuum cavity, and pump the vacuum until the vacuum degree reaches 3.0×10 -6 Pa, in order to increase the vacuum degree, wrap the heating tape on the whole preparation cavity, and bake it to 150°C for 3 days, so that the vacuum on the back can reach 3.0×10 -8 Pa, after the baking is over, degas the Cr and Te sources separately, slowly heat the Te source to 340°C, degas until the Te source is heated to 340°C, and the vacuum degree is less than 1.0×10 -7 Pa. After the end, the Cr source is degassed, and the Cr source is slowly heated to 950°C for degassing. During the process, the vacuum degree of the preparation chamber is kept below 1.0×10 -7 Pa, when the tem...

Embodiment 2

[0065] The specific implementation steps are as follows:

[0066] Step 1: Select high-purity Cr rods and Te element powders, that is, Cr rods with a purity of 99.9999% and Te powders with a purity of 99.9999%, and put them into the electron beam evaporation source and the K-cell evaporation source respectively.

[0067] Step 2: Insert the Cr and Te sources into the vacuum cavity, and pump the vacuum until the vacuum degree reaches 3.0×10 -6 Pa, in order to increase the vacuum degree, wrap the heating tape on the whole preparation cavity, and bake it to 150°C for 3 days, so that the vacuum on the back can reach 3.0×10 -8 Pa, after the baking is over, degas the Cr and Te sources separately, slowly heat the Te source to 340°C, degas until the Te source is heated to 340°C, and the vacuum degree is less than 1.0×10 -7 Pa. After the end, the Cr source is degassed, and the Cr source is slowly heated to 950°C for degassing. During the process, the vacuum degree of the preparation ch...

Embodiment 3

[0074] The specific implementation steps are as follows:

[0075] Step 1: Select high-purity Cr rods and Te element powders, that is, Cr rods with a purity of 99.9999% and Te powders with a purity of 99.9999%, and put them into the electron beam evaporation source and the K-cell evaporation source respectively.

[0076]Step 2: Insert the Cr and Te sources into the vacuum cavity, and pump the vacuum until the vacuum degree reaches 3.0×10 -6 Pa, in order to increase the vacuum degree, the whole preparation cavity can be wrapped with a heating tape, and baked to 150°C for 3 days, so that the vacuum on the back can reach 3.0×10 -8 Pa, after the baking is over, degas the Cr and Te sources separately, slowly heat the Te source to 340°C, degas until the Te source is heated to 340°C, and the vacuum degree is less than 1.0×10 -7 Pa. After the end, the Cr source is degassed, and the Cr source is slowly heated to 950°C for degassing. During the process, the vacuum degree of the prepara...

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Abstract

The invention discloses a single-layer or several-single-layer CrTe3 film and a preparation method thereof. The thin film is of a single structure phase and is a magnetic semiconductor two-dimensional material, and the surface of the thin film shows a characteristic zigzag structure under a scanning tunneling microscope. According to the preparation method of the single-layer CrTe3 thin film, the single-layer CrTe3 thin film is prepared in a vacuum cavity by adopting a molecular beam epitaxy method. The single-layer CrTe3 thin film is easy to prepare, high in quality, uniform in component and smooth in surface. The invention further provides application of the single-layer CrTe3 thin film in a spinning electronic device, and the single-layer CrTe3 thin film has important application on miniaturization of the electronic device.

Description

technical field [0001] The invention relates to the field of new materials, in particular to the field of a magnetic semiconductor thin film, and relates to a single-layer or several single-layer CrTe3 thin film and a preparation method thereof. Background technique [0002] Two-dimensional van der Waals layered materials have strong covalent bonds within the layers, while the van der Waals interactions between the layers are relatively weak, which makes the properties of the bulk material and the properties of a single layer or several monolayers have a very big difference. For example, graphene is a single-layer structure material of graphite. Physicists Andre Geim and Konstantin Novoselov of the University of Manchester successfully separated graphene from graphite by micromechanical exfoliation, so Together they won the 2010 Nobel Prize in Physics. The excellent performance of graphene that its bulk graphite does not have has triggered people's in-depth research on two...

Claims

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Application Information

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IPC IPC(8): C01B19/04
CPCC01B19/007C01P2004/20C01P2004/03C01P2004/60
Inventor 姚杰赵爱迪
Owner UNIV OF SCI & TECH OF CHINA
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