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A preparation device for semi-insulating indium phosphide

A preparation device and a technology for indium phosphide, which are applied in chemical instruments and methods, polycrystalline material growth, single crystal growth and other directions, can solve the problems of few indium phosphide annealing techniques and inapplicability to indium phosphide and the like

Active Publication Date: 2022-02-15
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The traditional direct furnace in-situ annealing technology is not suitable for indium phosphide, and currently there are very few technologies for direct furnace annealing of indium phosphide

Method used

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  • A preparation device for semi-insulating indium phosphide
  • A preparation device for semi-insulating indium phosphide
  • A preparation device for semi-insulating indium phosphide

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Embodiment Construction

[0030] The present invention will be further described below in conjunction with the accompanying drawings.

[0031] see figure 1 , a preparation device for semi-insulating indium phosphide, comprising a furnace body, a crucible 11, a heating and supporting system, a seed rod 3 passing through the furnace body, a hydrogen pipe 25 and an inert gas pipe 26 arranged on the side of the furnace body , Exhaust pipe 19; An injector 7 is provided in the furnace body, and the injection lifting rod 6 connected to the injector 7 protrudes out of the furnace body to connect the driving device (marked in the figure); an in-situ annealing device is also arranged in the furnace body.

[0032] The heating and supporting system of the crucible 11 includes a thermal insulation cover 12 , a main heater 15 , a graphite support 16 , a crucible rod 17 , and a lower heater 18 .

[0033] see figure 2 , the lifting rod 6 is connected to the injector 7 through the right support 6-1 of the injection ...

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Abstract

A preparation device for semi-insulating indium phosphide, belonging to the field of crystal preparation, including a furnace body, a crucible, a heating and support system, a seed rod passing through the furnace body, a hydrogen pipe and an inert gas pipe arranged on the side of the furnace body , exhaust pipe; an injector is arranged in the furnace body, and the injection lifting rod connected to the injector protrudes out of the furnace body; an in-situ annealing device is also arranged in the furnace body. Adopting the preparation device proposed by the present invention can complete the growth of the crystal, and realize the in-situ annealing of the crystal in a suitable space, especially when it is necessary to anneal under the phosphorus atmosphere, ensure that the phosphorus gas does not condense, and maintain the pressure in the annealing space, Establish a good annealing environment to ensure the quality of semi-insulating indium phosphide crystals.

Description

technical field [0001] The invention belongs to the field of crystal preparation, and in particular relates to a preparation device for semi-insulating indium phosphide. Background technique [0002] InP material is an important compound semiconductor material. It is one of the preferred materials for high-frequency and high-speed devices. It shows great advantages in the frequency band above 100GHz. InP-based microelectronic devices have high frequency, low noise, high efficiency, and radiation characteristics. Semi-insulating indium phosphide substrates are widely used in 5G networks, terahertz communications, millimeter wave communications and detection and other fields. Usually, the semi-insulating properties of indium phosphide are achieved by doping iron, but iron will reduce the critical shear stress of the crystal, and there are many defects such as dislocations. [0003] In addition, in terahertz devices, doping elements have a great influence on the dielectric co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02C30B29/40
CPCC30B33/02C30B29/40
Inventor 王书杰孙聂枫徐森锋孙同年刘惠生
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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