Production method of high-abundance boron-11 isotope

A production method and isotope technology, applied in the direction of boron halides, boron halide compounds, etc., can solve the problems of reduced operability and stability, backward technology, and unfavorable stable production of boron isotopes.

Active Publication Date: 2021-09-14
SHANGHAI RES INST OF CHEM IND +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In the above-mentioned patent, CN102774845A adopts the most basic chemical exchange process and uses a single tower for isotope enrichment. The process is backward, and the abundance reaches 99.7%. Hundreds of theoretical plates are needed, and the device needs a height of tens of meters or even hundreds of meters. Industrial scale-up production is more difficult
CN102115093B adopts the batch rectification double-tower series process. Now the abundance of boron-11 is increased in the first tower, and then enters the second tower to continue to increase the abundance. Although the total height of the device is reduced, each tower is equipped with Condenser and reboiler, increased energy consumption
At the same time, the batch process is not conducive to industrial scale-up production
CN108275691B adopts multi-tower cascading process to continuously enrich boron-11. The towers are connected by gas phase pipelines and liquid phase pipelines, and pumps are used to transport liquid. Although energy consumption is greatly reduced, in order to achieve higher abundance , requires three or more extraction tower cascades, a lot of equipment and a large area, which is not conducive to industrial production
[0009] Simultaneously, CN102115093B and CN108275691B adopt multi-tower process to enrich boron-11, all have used pipeline as the connecting passage between tower and tower, and CN108275691B has also used pump to convey liquid complex compound between tower and tower, and this undoubtedly increases It increases the complexity of the process and the difficulty of control, reduces the overall operability and stability of the device, and is very unfavorable for the stable production of boron isotopes

Method used

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  • Production method of high-abundance boron-11 isotope

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The complexing agent adopts anisole, enters from the complexing agent inlet 1 (comprising a top inlet and three middle inlets) of the gas-liquid exchange device, and boron trifluoride enters from the boron trifluoride raw material inlet 2 ( That is, the bottom entrance of the device) enters. The boron trifluoride-anisole complex is extracted from the bottom outlet 3 of the gas-liquid exchange device, and the boron trifluoride rich in boron-11 is extracted from the boron-11 product outlet 4 (i.e. its top outlet) of the gas-liquid exchange device. ) mining.

[0051] The flow change of boron trifluoride in the gas-liquid exchange device and the location of the inlet and outlet of the material are as follows: figure 1 As shown, the molar flow of boron trifluoride in the device from bottom to top gradually decreases, and the flow of anisole increases gradually. The molar flow rate of the boron trifluoride raw material is 5 kmol / h, and the incoming molar flow rates of aniso...

Embodiment 2

[0055] The complexing agent adopts methyl ether, enters from the complexing agent inlet 1 (comprising a top inlet and two middle inlets) of the gas-liquid exchange device, and boron trifluoride enters from the boron trifluoride raw material inlet 2 of the gas-liquid exchange device (i.e. bottom inlet of the device) to enter. The boron trifluoride-methyl ether complex is extracted from the bottom outlet 3 of the gas-liquid exchange device, and the boron trifluoride-methyl ether complex rich in boron-11 is extracted from the boron-11 product outlet 4 of the gas-liquid exchange device (Here is the middle outlet) mining, the middle outlet is located between the top complexing agent inlet 1 and the first middle complexing agent inlet 1 from top to bottom.

[0056] From bottom to top, the molar flow rate of boron trifluoride in the gas-liquid exchange device gradually decreases, and the flow rate of methyl ether gradually increases. The molar flow rate of the boron trifluoride raw ...

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Abstract

The invention relates to a production method of high-abundance boron-11 isotope. The method comprises the following steps: continuously feeding boron trifluoride from the bottom of a gas-liquid exchange device, and continuously feeding a complexing agent capable of carrying out complexing reaction with a boron trifluoride raw material from the top and the middle of the gas-liquid exchange device, and enabling the boron trifluoride and the complexing agent to be in countercurrent contact in the gas-liquid exchange device; and continuously extracting the boron-11-rich product from a top outlet and/or a middle outlet of the gas-liquid exchange device. Compared with the prior art, the method has the advantages that the unique single-tower process is adopted, the previous serial and cascade complex processes are simplified, the production stability is greatly improved, the enrichment efficiency of the boron-11 is improved, the energy consumption is reduced, and the abundance of the boron-11 isotope produced by the method can reach 99.9% or above.

Description

technical field [0001] The invention belongs to the technical field of isotope separation, and relates to a production method of high-abundance boron-11 isotope. Background technique [0002] Due to the lack of protection from the atmosphere, spacecraft integrated chips are vulnerable to bombardment by high-energy particles, the most important of which is the single event effect. According to reports in the United States, half of satellite failures are caused by this effect. The single event effect means that a single high-energy particle (such as heavy ions, protons, neutrons, etc.) in the space radiation environment enters the interior of the integrated chip and will hit electrons to form free electron pairs. When it reaches a certain number, it will cause the circuit The logic state flips, and even the circuit fails. [0003] In nature, boron has two stable isotopes, boron-10 and boron-11, with abundances of 19.8±0.2% and 80.2%±0.2%, respectively. Among them, boron-10 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B35/06
CPCC01B35/061
Inventor 李瑜哲吴高胜许保云艾波宗睿王传昌王世忠翟金国
Owner SHANGHAI RES INST OF CHEM IND
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