Chip packaging method, chip and electronic device

Abstract

The invention relates to the technical field of intelligent power modules, and discloses a chip packaging method, a chip and an electronic device. The packaging method comprises the steps that a cut wafer is provided to prepare a power semiconductor chip, wherein the power semiconductor chip comprises a grid electrode, a first emitting electrode and a second emitting electrode; high-temperature adhesive films are attached to the surfaces of the grid electrode and the first emitting electrode; the power semiconductor chip is mounted on the electronic packaging substrate; the electronic packaging substrate and a lead frame are assembled to realize electric connection between all the components; a driving control chip is mounted on the lead frame, and electric connection is realized; the high-temperature adhesive films are removed; the connection between the driving electrode of the driving control chip and the grid electrode and the connection between the first emitting electrode and the lead frame are realized; and plastic packaging, post-curing, photoresist removal, electroplating and rib cutting are carried out. According to the packaging method disclosed by the invention, the problem of grid pollution generated in the combination process of the lead frame and the chip can be prevented, and the reliability of the grid bonding wire is enhanced.

Description

technical field [0001] The present application relates to the technical field of intelligent power modules, in particular to a chip packaging method, a chip and an electronic device. Background technique [0002] The intelligent power module not only integrates the power switching device and the driving circuit, but also has built-in fault detection circuits such as overvoltage, overcurrent and overheating, and can send detection signals to the CPU. It is composed of a high-speed and low-power die, an optimized gate drive circuit and a fast protection circuit, which can ensure that the intelligent power module itself is not damaged even if a load accident or improper use occurs. With the further increase of the current density of power devices, higher requirements are put forward for the heat dissipation capabilities of devices and modules, and the market requires increasingly light, thin, short, small and low-cost products, and the miniaturization of power devices or module...

AI Technical Summary

Problems solved by technology

During the high-temperature bonding process of bonding material and copper frame on the surface of the chip, pollutants will splash onto the gate, and in the process of cleaning with liquid medicine, secondary pollution may also occur, resulting in a decline in the quality of the smart power module

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