Zinc gallate nano material as well as preparation method and application thereof

A nano-material, zinc gallate technology, applied in the field of nano-materials, can solve problems such as changes in physical and chemical properties, and achieve a unique and neat effect

Pending Publication Date: 2021-09-28
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, ZnGa on a substrate (such as sapphire) 2 o 4 Large-area epitaxial growth is still a challenge, and only Professor R.H.Horng and others have realized ZnGa 2 o 4 epitaxial growth of thin films, so far there is nothing about ZnGa 2 o 4 Reports on epitaxial growth of nanomaterials; for ZnGa 2 o 4 The growth mechanism of ZnGa is still in the stage of exploration, and further research on its growth mechanism can better realize the ZnGa 2 o 4 The controllable growth of nanomaterials; the size, structure and shape of nanomaterials are different, and their energy level structure, surface energy, interface effect and surface atomic arrangement will be very different. The chemical properties will also change accordingly

Method used

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  • Zinc gallate nano material as well as preparation method and application thereof
  • Zinc gallate nano material as well as preparation method and application thereof
  • Zinc gallate nano material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] A kind of preparation of zinc gallate nanomaterial:

[0070] Weigh 0.2g ZnO powder, 0.5g Ga 2 o 3 powder and 1g graphite powder, and mix evenly. Then they are pressed into blocks and put into a ceramic boat as the source material. The c-plane sapphire with a size of 0.8cm×0.8cm and a 20nm thick gold film on the surface is used as a substrate and placed above the source material in the ceramic boat. . Put the ceramic boat into the quartz tube located in the tube furnace, first use the mechanical pump to pump the furnace to 4mTorr, and then pass the Ar flow into the tube. When the pressure in the tube reaches 100Torr, the furnace starts to heat up at a heating rate of 40°C / min. 980°C, keep constant temperature, and pass O 2 (At this time O 2 The volume ratio to Ar is 0.05:0.95), maintain the pressure in the tube at 50Torr, stop heating after the reaction lasts for 1h, and change the gas flow back to pure Ar flow, when the furnace cools to room temperature, stop venti...

Embodiment 2

[0076] A preparation of zinc gallate nanomaterial: Compared with Example 1, the difference is only in that compared with Example 1, the difference is only: the reaction duration is 20min

[0077] The obtained sample is marked as sample 2#, and the SEM image of sample 2# is as follows image 3 As shown, A is the cross-sectional topography of the sample. It can be seen that the height of the nanowire is about 300nm, and B is the topography of the sample surface. Combining the two pictures, it shows that the bottom of the nanowire is indeed connected by a thin film.

Embodiment 3～4

[0079] A preparation of zinc gallate nanomaterial: Compared with Example 1, the difference is only in that compared with Example 1, the difference is only as shown in Table 1:

[0080] The difference between the preparation method of table 1 embodiment 3~4 and embodiment 1

[0081]

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Abstract

The invention discloses a zinc gallate nano material as well as a preparation method and application thereof. The zinc gallate nano material has a nanowire structure which is cross-linked at the bottom and is vertically arranged in order. The zinc gallate nano material has a good application prospect as a semiconductor material and/or a luminescent material, and can be widely applied to the fields of ultraviolet detectors, fluorescent luminescent powder, gas sensors and the like.

Description

technical field [0001] The application relates to a zinc gallate nanomaterial and its preparation method and application, belonging to the technical field of nanomaterials. Background technique [0002] ZnGa 2 o 4 As a new type of ultra-wide bandgap semiconductor material, semiconductor materials have very broad application prospects in the fields of luminescence, gas sensing, photodetectors, transparent conductive oxides, etc. due to their excellent physical and chemical properties. Although people have prepared various structures, shapes and sizes of ZnGa 2 o 4 semiconductor materials, but for ZnGa 2 o 4 There are still many problems to be solved in the research of semiconductor materials. For example, ZnGa on a substrate (such as sapphire) 2 o 4 Large-area epitaxial growth is still a challenge, and only Professor R.H.Horng and others have realized ZnGa 2 o 4 epitaxial growth of thin films, so far there is nothing about ZnGa 2 o 4 Reports on epitaxial growth of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00B82Y40/00B82Y20/00
CPCC01G15/00B82Y40/00B82Y20/00C01P2004/16C01P2004/03C01P2002/72
Inventor 王俪霖孙姝婧陈晨龙
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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