Machine table for depositing high-adhesion film on III-V substrate and a process of machine table

Abstract

The invention relates to a machine table for depositing a high-adhesion film on an III-V substrate and a process of the machine table. The machine table for depositing the high-adhesion film on the III-V substrate comprises a main chamber, a supporting seat is arranged at the top of the main chamber, a lifting device is installed at the bottom of the main chamber, the lifting device and the supporting seat are oppositely arranged, and a slide holder is installed at the position, opposite to the supporting seat, of the lifting device; the supporting seat is U-shaped, a catalytic wire is embedded in a U-shaped groove of the supporting seat, a first gas inlet and an extraction opening are respectively formed in one side of the main chamber, the first gas inlet is used for introducing reaction gas, and the extraction opening is connected and communicated with a pump body; a second gas inlet is formed in the other side of the main chamber and is communicated with a remote plasma gas generation module; according to the machine table for depositing the high-adhesion film on the III-V substrate and a process of the machine table, process quality can be ensured, and meanwhile, the cleanliness of the chamber is improved.

Description

technical field [0001] The invention relates to a machine platform for depositing a high-adhesive thin film on a III-V substrate and a process thereof, belonging to the field of semiconductor manufacturing. Background technique [0002] III-V materials, such as InP, GaAs, etc., are very popular in optical communication and 5G, but it is challenging to deposit dielectric films (silicon oxide, silicon nitride) on their substrates. The main problem is the adhesion of films prepared by PECVD. The adhesion is too poor, and finally the blue film process cannot be passed when the device is cut, that is to say, the silicon oxide, silicon nitride, etc. adhered to the blue cutting film will be torn off. [0003] At present, PECVD is used to slowly deposit silicon oxide and silicon nitride dielectric films (several A / min) at 200-300°C and <200mTorr cavity pressure, the purpose is to form based on the full reaction of silane, ammonia, laughing gas and other gases Silicon oxide, sili...

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Problems solved by technology

[0002] III-V materials, such as InP, GaAs, etc., are very popular in optical communication and 5G, but it is challenging to deposit dielectric films (silicon oxide, silicon nitride) on their substrates. The main problem is the adhesion of films prepared by PECVD. The adhesion is too poor, and finally the blue film process cannot be passed when the device is cut, that is to say, the silicon oxide and silicon nitride adhered to the blue cutting film will be torn off

[0003] At present, PECVD is used to slowly deposit silicon oxide and silicon nitride dielectric films (several A / min) at 200-300°C and <200mTorr cavity pressure, the purpose is to form based on the full reaction of silane, ammonia, laughing gas and other gases Silicon oxide, silicon nitride, reduce the hydrogen content and the number of dangling bonds in the film to make the film dense enough; another reason is that the natural oxide layer formed on the surface of the III-V compound reduces the adhesion; but because the film is deposited at a low speed , Generally, it takes about 20-30 minutes to deposit a film with a thickness of 300-500nm, so it has a great impact on production capacity. Liquid cleaning is done at normal temperature and pressure, which cannot be completely isolated from oxygen, and the sample is easily oxidized again during the drying process

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