Quantum well layer preparation method, LED epitaxial layer and LED chip

Abstract

The invention relates to a quantum well layer preparation method, an LED epitaxial layer and an LED chip. The preparation of the quantum well layer is divided into two stages, and in the growth process of the first stage, a first potential barrier layer and a first potential well layer are alternately grown in a circulation mode for n times. In the second growth stage, a pressure stress relief intermediate layer is inserted into the second potential barrier layer and the second potential well layer, and the second potential barrier layer, the pressure stress relief intermediate layer and the second potential well layer are alternately and circularly grown for m times. Through the pressure stress relief intermediate layer, the pressure stress in the quantum well layer can be effectively relieved, the piezoelectric polarization effect can be reduced, the overlapping of electron hole wave functions can be improved, electron holes can be effectively limited in a quantum well, the hole distribution uniformity can be improved, and the recombination efficiency of electron holes can be further improved. Therefore, based on the preparation method of the quantum well layer, the internal quantum efficiency of the LED chip can be effectively improved, the luminance of the LED chip based on the quantum well layer is increased, the efficiency attenuation under large current is reduced, and the quality of the LED chip is enhanced.

Description

technical field [0001] The invention relates to the technical field of LED (Light Emitting Diode, light emitting diode), in particular to a method for preparing a quantum well layer, an LED epitaxial layer and an LED chip. Background technique [0002] In recent years, GaN (gallium nitride)-based LED chips have attracted widespread attention due to their high reliability, high cost performance and high efficiency, and have been widely used in various industries, especially with InGaN (indium gallium nitrogen) multi-quantum Well LED chips have great application prospects in full-color displays because they exhibit a wide range of light-emitting wavelengths. However, the current LED chip has the problem of low internal quantum efficiency, which seriously restricts the quality of the LED chip. [0003] Therefore, how to improve the quantum efficiency in the LED chip is an urgent problem to be solved. Contents of the invention [0004] In view of the deficiencies in the abov...

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Problems solved by technology

[0004] In view of the deficiencies in the above-mentioned related technologies, the purpose of this application is to provide a method for preparing a quantum well layer, an LED epitaxial layer and an LED chip, aiming at solving the problems of LEDs in related technologies. The quantum efficiency in the chip is not high, and the quality of the LED chip is not good.

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