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Method for growing CZT single-crystal ingot

A single crystal ingot and seed crystal technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of large fluctuations in the content of Zn element, and achieve the effects of easy control, simple growth method, and reduced growth cost

Inactive Publication Date: 2021-10-19
合肥天曜新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for growing a CZT single crystal ingot to solve the problem that the Zn element content in different regions of the substrate fluctuates greatly

Method used

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  • Method for growing CZT single-crystal ingot
  • Method for growing CZT single-crystal ingot
  • Method for growing CZT single-crystal ingot

Examples

Experimental program
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Effect test

Embodiment 1

[0031] A method for growing a CZT monocrystalline ingot, comprising the following steps:

[0032] Step A, mixing amorphous diboron trioxide and micron graphite powder according to a mass ratio of 82:12 to form a mixed slurry, wherein the average particle size of the micron graphite powder is 45 μm;

[0033] Step B. Coat the mixed slurry on the inner wall of the pyrolytic boron nitride crucible with a coating thickness of 2 mm. After the coating is completed, rotate the crucible for 15 seconds at a speed of 360 RPM, and then put the rotated crucible into a furnace at 120°C After 9 hours of heat preservation, it is cooled with the furnace to complete the coating;

[0034] Step C, put the cadmium zinc telluride polycrystalline synthetic material with a purity of 7N in the shoulder area of ​​the boron nitride crucible, and put the seed crystal in the seed crystal area, and then put the pyrolytic boron nitride crucible into a closed quartz container inside, vacuumize the quartz co...

Embodiment 2

[0038] Step A, mixing amorphous diboron trioxide and micron graphite powder according to a mass ratio of 85:15 to form a mixed slurry, wherein the average particle size of the micron graphite powder is 40 μm;

[0039] Step B. Coat the mixed slurry on the inner wall of the pyrolytic boron nitride crucible with a coating thickness of 2.5 mm. After the coating is completed, rotate the crucible for 15 seconds at a speed of 400 RPM, and then put the rotated crucible into a furnace at 130°C After 10 hours of internal heat preservation, it is cooled with the furnace to complete the coating;

[0040] Step C, put the cadmium zinc telluride polycrystalline synthetic material with a purity of 7N in the shoulder area of ​​the boron nitride crucible, and put the seed crystal in the seed crystal area, and then put the pyrolytic boron nitride crucible into a closed quartz container evacuate the quartz container, heat and melt, cool, and grow a CZT single crystal ingot. After the growth is co...

Embodiment 3

[0044] Step A, mixing amorphous diboron trioxide and micron graphite powder according to a mass ratio of 85:15 to form a mixed slurry, wherein the average particle size of the micron graphite powder is 40 μm;

[0045] Step B. Coat the mixed slurry on the inner wall of the pyrolytic boron nitride crucible with a coating thickness of 2.5 mm. After the coating is completed, rotate the crucible for 25 seconds at a speed of 440 RPM, and then put the rotated crucible into a furnace at 143 ° C. After 11 hours of internal heat preservation, it is cooled with the furnace to complete the coating;

[0046] Step C, put the cadmium zinc telluride polycrystalline synthetic material with a purity of 7N in the shoulder area of ​​the boron nitride crucible, and put the seed crystal in the seed crystal area, and then put the pyrolytic boron nitride crucible into a closed quartz container evacuate the quartz container, heat and melt, cool, and grow a CZT single crystal ingot. After the growth is c...

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Abstract

The invention discloses a method for growing a CZT single-crystal ingot, belonging to the technical field of semiconductor material manufacturing processes. The method for growing the CZT single-crystal ingot comprises the following steps: step A, mixing amorphous diboron trioxide and micron-sized graphite powder according to a mass ratio to form mixed slurry; step B, uniformly coating the inner wall of a pyrolytic boron nitride crucible with the mixed slurry via a swabbing method or a pulsed arc discharge deposition method; and step C, placing a zinc telluride polycrystal synthetic material in a shouldering area in the pyrolytic boron nitride crucible, placing a seed crystal in a seed crystal area, then placing the pyrolytic boron nitride crucible in a quartz container, and successively carrying out heating, melting, cooling and CZT single-crystal ingot growing so as to obtain the CZT single-crystal ingot after the growth is completed. According to the invention, amorphous diboron trioxide and graphite powder are mixed to form the mixed slurry, the inner wall of the pyrolytic boron nitride crucible is coated with the mixed slurry, an included angle between a growth plane and a cutting plane is smaller than 4 degrees, and Zn element content fluctuation of different areas on the CZT substrate slice is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material manufacturing technology, and in particular relates to a method for growing a CZT single crystal ingot. Background technique [0002] Cadmium zinc telluride (CdZnTe), hereinafter referred to as CZT, is an important compound semiconductor material. The substrate made of CZT single crystal is one of the key raw materials for the production of mercury cadmium telluride (MCT) detectors (currently mainstream mid-to-high-end infrared detectors). one. The reason why CZT can undertake this function is that its crystallographic parameters can be obtained by adjusting the content ratio of Zn element to meet the growth requirements of different MCT crystals. Therefore, the content of Zn element is one of the key indicators for the quality evaluation of CZT crystal as an epitaxial growth substrate. [0003] In the prior art, CZT single crystal growth adopts the principle of solidification fro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B11/00C04B41/85
CPCC30B29/48C30B11/002C04B41/5006C04B41/85C04B41/009C04B35/583C04B41/4535C04B41/5001
Inventor 庞昊谢雨凌
Owner 合肥天曜新材料科技有限公司