Method for growing CZT single-crystal ingot
A single crystal ingot and seed crystal technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of large fluctuations in the content of Zn element, and achieve the effects of easy control, simple growth method, and reduced growth cost
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Embodiment 1
[0031] A method for growing a CZT monocrystalline ingot, comprising the following steps:
[0032] Step A, mixing amorphous diboron trioxide and micron graphite powder according to a mass ratio of 82:12 to form a mixed slurry, wherein the average particle size of the micron graphite powder is 45 μm;
[0033] Step B. Coat the mixed slurry on the inner wall of the pyrolytic boron nitride crucible with a coating thickness of 2 mm. After the coating is completed, rotate the crucible for 15 seconds at a speed of 360 RPM, and then put the rotated crucible into a furnace at 120°C After 9 hours of heat preservation, it is cooled with the furnace to complete the coating;
[0034] Step C, put the cadmium zinc telluride polycrystalline synthetic material with a purity of 7N in the shoulder area of the boron nitride crucible, and put the seed crystal in the seed crystal area, and then put the pyrolytic boron nitride crucible into a closed quartz container inside, vacuumize the quartz co...
Embodiment 2
[0038] Step A, mixing amorphous diboron trioxide and micron graphite powder according to a mass ratio of 85:15 to form a mixed slurry, wherein the average particle size of the micron graphite powder is 40 μm;
[0039] Step B. Coat the mixed slurry on the inner wall of the pyrolytic boron nitride crucible with a coating thickness of 2.5 mm. After the coating is completed, rotate the crucible for 15 seconds at a speed of 400 RPM, and then put the rotated crucible into a furnace at 130°C After 10 hours of internal heat preservation, it is cooled with the furnace to complete the coating;
[0040] Step C, put the cadmium zinc telluride polycrystalline synthetic material with a purity of 7N in the shoulder area of the boron nitride crucible, and put the seed crystal in the seed crystal area, and then put the pyrolytic boron nitride crucible into a closed quartz container evacuate the quartz container, heat and melt, cool, and grow a CZT single crystal ingot. After the growth is co...
Embodiment 3
[0044] Step A, mixing amorphous diboron trioxide and micron graphite powder according to a mass ratio of 85:15 to form a mixed slurry, wherein the average particle size of the micron graphite powder is 40 μm;
[0045] Step B. Coat the mixed slurry on the inner wall of the pyrolytic boron nitride crucible with a coating thickness of 2.5 mm. After the coating is completed, rotate the crucible for 25 seconds at a speed of 440 RPM, and then put the rotated crucible into a furnace at 143 ° C. After 11 hours of internal heat preservation, it is cooled with the furnace to complete the coating;
[0046] Step C, put the cadmium zinc telluride polycrystalline synthetic material with a purity of 7N in the shoulder area of the boron nitride crucible, and put the seed crystal in the seed crystal area, and then put the pyrolytic boron nitride crucible into a closed quartz container evacuate the quartz container, heat and melt, cool, and grow a CZT single crystal ingot. After the growth is c...
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