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Indium compound and method for forming indium-containing film using said indium compound

A film forming method and compound technology, applied in the field of indium compounds, can solve problems such as uncomfortable low pressure and the like

Pending Publication Date: 2021-10-22
LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to form a film with a uniform film thickness on an uneven surface during sputtering
In addition, when forming an ITO or IGZO film on a flexible organic substrate that has appeared in recent years, it may not be suitable for the low pressure required in the sputtering process.

Method used

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  • Indium compound and method for forming indium-containing film using said indium compound
  • Indium compound and method for forming indium-containing film using said indium compound
  • Indium compound and method for forming indium-containing film using said indium compound

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0154] s Synthesis of BuCp)>

[0155] 300 mL of dehydrated pentane and 27.8 g (0.22 mol, 1.1 equivalent) of s-butylcyclopentadiene were added to a 1 L flask. At room temperature (temperature is 20° C.), 131 mL (0.21 mol, 1 equivalent) of 1.6 M n-butyllithium solution was added dropwise. The obtained reaction mixture was stirred with a magnetic stirrer for 3 hours, and then the solvent was distilled off under reduced pressure to obtain a white solid.

[0156] The white solid was suspended in 500 mL of dehydrated diethyl ether, 31.6 g (0.21 mol, 1 equivalent) of InCl was added, and after stirring overnight at room temperature, the yellow filtrate was separated by filtration.

[0157] The obtained filtrate was distilled off the solvent under reduced pressure to obtain a yellow liquid. The obtained liquid is introduced into a simple distillation device to obtain a fraction at a temperature of 40°C to 45°C and a pressure of 5Pa, i.e. a pale yellow liquid. The yield is 45.3g (0.19...

Embodiment 2

[0163] s Synthesis of PenCp)>

[0164] Add 9.5g (0.067mol, 1.0 equivalent) of Li ( s PenCp) and 200 mL of ether after dehydration. After adding 10.1 g (0.067 mol, 1 equivalent) of InCl and stirring overnight at room temperature, the yellow filtrate was separated by filtration. The obtained filtrate was distilled off the solvent under reduced pressure to obtain a yellow liquid. The obtained liquid was introduced into a simple distillation device to obtain a fraction at a temperature of 70°C to 80°C and a pressure of 5 Pa, i.e. a pale yellow liquid. The yield was 13.8g (0.055mol), and the yield was 83% (based on InCl). The obtained pale yellow liquid was liquid at storage temperature, room temperature 23°C.

[0165] The obtained In( s PenCp) for analysis. Using C in a deuterated solvent 6 D. 6 Conducted 1 H-NMR measurement confirmed that In( s structure of PenCp). 1 H-NMR (δ, C 6 D. 6 , 400MHz, 25°C): 5.92(t, 2H, Cp-H), 5.81(t, 2H, Cp-H), 2.57(m, 1H, Cp-CH-), 1.60-1....

Embodiment 3

[0169]

[0170] 400 mL of dehydrated pentane and 23.2 g (0.18 mol, 1.1 equivalent) of isopentylcyclopentadiene were added to a 1 L flask. At room temperature (temperature is 20° C.), 104 mL (0.17 mol, 1 equivalent) of 1.6 M n-butyllithium solution was added dropwise. The obtained reaction mixture was stirred with a magnetic stirrer for 3 hours, and then the solvent was distilled off under reduced pressure to obtain a white solid.

[0171] The white solid was suspended in 500 mL of dehydrated diethyl ether, 25.1 g (0.17 mol, 1 equivalent) of InCl was added, and after stirring overnight at room temperature, the yellow filtrate was separated by filtration.

[0172]The solvent was distilled off from the obtained filtrate under reduced pressure to obtain a pale yellow solid. The obtained solid was introduced into a simple distillation device, and the distillate at a temperature of 60°C to 65°C and a pressure of 0.7kPa was collected, that is, a light yellow liquid. The liquid wa...

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Abstract

Provided are: a method for forming an indium-containing film through an ALD method at high temperature, the method being capable of using an indium compound without any specific pre-treatment and forming an indium-containing film with high throughput; and an indium compound used in said method. The method for forming an indium-containing film according to the present invention is characterized by comprising: (a) a step for disposing a substrate in a chamber; (b) a step for introducing a gas containing an indium compound represented by general formula (1); (c) a first purge step; (d) a step for introducing an oxygen-containing gas; and (e) a second purge step, wherein the steps (b) to (e) are repeated at a temperature of 225-400 DEG C until an indium-containing film having a desired thickness is obtained. In(C5R1xH(5-x)).....(1). In general formula (1), x is an integer of 1-5, and the R1's are each independently a hydrocarbon group having 1 to 8 carbon atoms.

Description

technical field [0001] The present invention relates to an indium compound and a method for forming an indium-containing film using the indium compound Background technique [0002] Since indium-containing oxides are transparent and conductive, they are widely used in the industry. For example, ITO (Indium Tin Oxide: Indium Tin Oxide) is often used as an electrode of a liquid crystal display (LCD). In addition, an indium oxide film to which other metal elements are added is also commonly used. This is because an indium oxide film to which other metal elements are added has higher conductivity than an indium oxide film containing only indium as a metal element. Recently, materials such as In-Ga-Zn-O, which contains indium, gallium, and zinc in a transparent TFT, are mounted on a specific type of thin film transistor (TFT), which is called IGZO. In addition to Ga and Zn, there are some materials that use other metals such as Sn, rare earths, Al, and Mg for the indium-contai...

Claims

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Application Information

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IPC IPC(8): C23C16/18C07F17/00C23C16/40C23C16/455
CPCC07F17/00C23C16/407C23C16/45553C07F5/00C23C16/45536
Inventor 大野刚嗣克里斯汀·杜斯拉特
Owner LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE