Method for improving cyclic utilization rate of polishing solution and silicon wafer polishing method
A technology for polishing silicon wafers and polishing liquids, which is applied to polishing compositions containing abrasives, electrical components, circuits, etc., which can solve the problems of reduced polishing speed of silicon wafers and negligible service life of polishing liquids for silicon wafers, so as to improve circulation Effects of utilization rate, extension of cycle time, and cost reduction
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Embodiment 1
[0056] In the first step, take 50 kg of silicon wafer polishing solution after 10 cycles as polishing solution A, add 10 g of ethylenediaminetetraacetic acid to the circulating polishing solution A at a stirring speed of 40 rpm, and continue stirring for 10 minutes to form mixed solution B;
[0057] In the second step, under the condition of stirring at 40 rpm, 5 g of fatty alcohol polyoxyethylene ether was added to the mixed solution B, and the stirring time was continued for 10 minutes to form a mixed solution C;
[0058] In the third step, under the condition of stirring at 40 rpm, add 10 g of sodium polyacrylate to the mixed solution C, and continue stirring for 10 minutes to form a mixed solution D;
[0059] In the fourth step, 100 g of 10 wt % NaOH solution was supplemented under the condition of stirring at 40 rpm to form a mixed solution E. The stirring time was continued for 10 minutes, and the pH value of the mixed solution E was finally 10.5.
Embodiment 2
[0061] In the first step, take 50 kg of silicon wafer polishing solution after 5 cycles as polishing solution A, add 500 g of oxalic acid to the circulating polishing solution A at a stirring speed of 200 rpm, and continue stirring for 1 minute to form a mixed solution B;
[0062] In the second step, under the condition of stirring at 200 rpm, 50 g of sodium dodecylbenzenesulfonate was added to the mixed solution B, and the stirring time was continued for 1 min to form a mixed solution C;
[0063] In the third step, under the condition of stirring at 200 rpm, 500 g of polyacrylic acid was added to the mixed solution C, and the stirring time was continued for 1 min to form a mixed solution D;
[0064] In the fourth step, under the condition of stirring at 200 rpm, add 500 g of 10wt% KOH solution to form a mixed solution E. The stirring time is continued for 1 min, and the pH value of the mixed solution E is finally 10.1.
Embodiment 3
[0066] In the first step, take 50 kg of silicon wafer polishing solution after 15 cycles as polishing solution A, add 250 g of citric acid to the circulating polishing solution A at a stirring speed of 20 rpm, and continue stirring for 40 minutes to form a mixed solution B ;
[0067] In the second step, under the condition of stirring at 20rpm, 25g sodium dodecylsulfonate was added to the mixed solution B, and the stirring time was continued for 40min to form a mixed solution C;
[0068] In the third step, under the condition of stirring at 20 rpm, 250 g of polyethylene glycol 400 was added to the mixed solution C, and the stirring time was continued for 40 minutes to form a mixed solution D;
[0069] In the fourth step, under the condition of stirring at 20 rpm, 5 g of hydroxyethylethylenediamine was supplemented to form a mixed solution E. The stirring time was continued for 40 minutes, and the pH value of the mixed solution E was finally 10.5.
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