Deep ultraviolet LED chip and manufacturing method thereof

Abstract

The invention discloses a deep ultraviolet LED chip and a manufacturing method thereof. The deep ultraviolet LED chip comprises an epitaxial structure which is provided with a first surface and a second surface which are opposite to each other, wherein the epitaxial structure comprises a P-type semiconductor layer, an N-type semiconductor layer and a multi-quantum well layer clamped between the P-type semiconductor layer and the N-type semiconductor layer, and the P-type semiconductor layer is exposed on the first surface of the epitaxial structure; a plurality of contact holes which extend from the first surface to the second surface of the epitaxial structure, wherein the bottom parts of the plurality of contact holes are located in the P-type semiconductor layer; and a plurality of metal nano layers which are positioned in the corresponding contact holes, wherein the metal nano layers are in contact with the P-type semiconductor layer. According to the deep ultraviolet LED chip, the plurality of contact holes are designed in the P-type semiconductor layer close to a quantum well layer, a metal nanometer layer is prepared in the contact holes to achieve the local surface plasmon polariton effect, meanwhile, a P-type silicon nanometer layer is used for providing holes, and the internal quantum efficiency of the deep ultraviolet LED chip is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and more specifically, to a deep ultraviolet LED chip and a manufacturing method thereof. Background technique [0002] In the deep ultraviolet LED chip (Light-Emitting Diode, light-emitting diode), in order to obtain better ohmic contact effect and higher hole concentration with the P-type semiconductor layer, it is necessary to grow a layer of p- The GaN layer, however, the p-GaN layer will absorb a large amount of deep ultraviolet light, which seriously affects the light emission of the deep ultraviolet LED chip. [0003] Therefore, it is necessary to develop a deep ultraviolet LED chip and its manufacturing method, hoping to improve the internal quantum efficiency of the deep ultraviolet LED chip while obtaining a higher hole concentration in the P-type semiconductor layer, thereby increasing the luminous amount of the ultraviolet LED chip. Contents of the inve...

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Problems solved by technology

[0002] In the deep ultraviolet LED chip (Light-Emitting Diode, light-emitting diode), in order to obtain better ohmic contact effect and higher hole concentration with the P-type semiconductor layer, it is necessary to grow a layer of p- The GaN layer, however, the p-GaN layer will absorb a large amount of deep ultraviolet light, which seriously affects the light emission of the deep ultraviolet LED chip

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