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Silicate microwave dielectric ceramic material and preparation method thereof

A technology of microwave dielectric ceramics and silicates, which is applied in the field of electronic ceramic materials, can solve problems such as poor temperature stability, failure to meet LTCC process requirements, and inapplicability of microwave electronic components, etc., to achieve high temperature stability and low dielectric loss , the effect of low dielectric constant

Inactive Publication Date: 2021-11-19
58TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its sintering temperature is 1275 ° C, and its temperature stability is poor, so it is not suitable for the preparation of microwave electronic components, nor can it meet the requirements of LTCC technology.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Step 1: Put Caco 3 , SRCO 3 , MGO, SIO 2 Powder Formula CA according to Table 1 1-x SR x MGSI 2 O 6 Ingredients, wet ball milling for 24 hours, after drying, placed in alumina crucible, raised to 1125 ° C at a temperature rise rate of 5 ° C / min, and heat it for 4 hours to obtain CA 1-x SR x MGSI 2 O 6 Base powder.

[0034] Step 2: The mixture of the base, the auxiliary component, and the sintered aid is required in accordance with the component assay in Table 1, and then placed in a planetary ball mill for 18 hours, the rotational speed of the planetary ball mill is 300 rmp. .

[0035] Step 3: The addition of a polyvinyl alcohol solution equivalent to a concentration of 5 wt% of the mixture is 5 wt%, and the granulation is 40 to 60 mesh after drying.

[0036] Step 4: Pressure into a cylindrical embryo body on a pressure on the electric block machine.

[0037] Step 5: Riching the embryo body in a high temperature box furnace at a temperature of 2 ° C / min to 550 ° C, hold...

Embodiment 2

[0042] Step 1: Put Caco 3 , SRCO 3 , MGO, SIO 2 Powder Formula CA according to Table 1 1-x SR x MGSI 2 O 6 Ingredients, wet ball milling for 24 hours, after drying, placed in alumina crucible, raised to 1125 ° C at a temperature rise rate of 5 ° C / min, and heat it for 4 hours to obtain CA 1-x SR x MGSI 2 O 6 Base powder.

[0043] Step 2: The mixture of the base, the auxiliary component, and the sintered aid is required in accordance with the component assay in Table 1, and then placed in the planetary ball mill for 30 hours, the rotational speed of the planetary ball mill is 300 rmp. .

[0044] Step 3: The addition of a concentration of 8% by weight of a concentration of 5 wt% is added to a polyvinyl alcohol solution of 5 wt%, and then 40 to 60 mesh screen granulated after drying.

[0045] Step 4: The pressure of 150 MPa is pressed into a cylindrical embryogen on the electric pressing machine.

[0046] Step 5: Riching the embryo body in a high temperature box furnace at a temper...

Embodiment 3

[0051] Step 1: Put Caco 3 , SRCO 3 , MGO, SIO 2 Powder Formula CA according to Table 1 1-x SR x MGSI 2 O 6 Ingredients, wet ball milling for 24 hours, after drying, placed in alumina crucible, raised to 1125 ° C at a temperature rise rate of 5 ° C / min, and heat it for 4 hours to obtain CA 1-x SR x MGSI 2 O 6 Base powder.

[0052] Step 2: The mixture of the base, the auxiliary component, and the sintered aid is required, and then the mixture is placed in the planetary ball mill 24 hours, the rotational speed of the planetary ball mill is 300RMP. .

[0053] In the third step: The addition of a polyvinyl alcohol solution equivalent to a concentration of 5 wt% of the mixture is 5 wt%, and the drying of 40 to 60 mesh is granulated after drying.

[0054] Step 4: Pressure into a cylindrical embryo body at a pressure of 120 MPa on the electric pressing machine.

[0055] Step 5: Riching the embryo body in a high temperature box furnace at a temperature of 2 ° C / min to 550 ° C, holding ...

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Abstract

The invention relates to an electronic ceramic material, in particular to a silicate microwave dielectric ceramic material and a preparation method thereof. The silicate microwave dielectric ceramic material is prepared from the following materials in parts by mass: 100 parts of a base material, 2-6 parts of an auxiliary material, and 2-10 parts of a sintering aid; the chemical composition expression of the base material is Ca1-x Sr x MgSi2O6, wherein x is greater than or equal to 0.1 and less than or equal to 0.6; the auxiliary material is SrTiO3; the sintering aid is LiF. The silicate microwave dielectric ceramic material provided by the invention is low in dielectric constant, low in dielectric loss and good in high-temperature stability, the relative dielectric constant epsilon r is adjustable in the range of 7.30-7.78, the Q * f value is 18271-46840 GHz, the temperature coefficient of resonance frequency tau f is adjustable in the range of -22.6- + 7.3 ppm / DEG C; and the silicate microwave dielectric ceramic material can become a new LTCC material; and therefore, the material can be widely applied to LTCC microwave substrates, laminated microwave devices and modules.

Description

Technical field [0001] The present invention relates to an electronic ceramic material, in particular a silicate microwave medium ceramic material and a preparation method thereof. Background technique [0002] Microwave medium ceramics are a class of ceramic materials that can be applied to dielectric materials in 300 MHz ~ 300GHz microwave band and complete one or more functions, and are widely used in modern communication fields to be used as a resonator, filter, medium substrate, etc. Component. In the past few decades, microwave communication technology demand demand in users and applications has experienced exponential growth. As the communication system broke out in recent years, 4G technology has become increasingly difficult to meet the demand for high signal capacity and signal response, which also promotes the rapid development of 5G technology. Low dielectric constant microwave medium ceramics can effectively shorten signal delay time, improve signal transmission spee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/22C04B35/20C04B35/622
CPCC04B35/22C04B35/20C04B35/622C04B2235/3206C04B2235/3208C04B2235/3213C04B2235/3418C04B2235/602C04B2235/656C04B2235/6562C04B2235/6567
Inventor 章国涛高艳刘书利王成迁王刚孟德喜
Owner 58TH RES INST OF CETC
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