Preparation method of metal silicide, semiconductor device and electronic equipment
A metal silicide and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the conductivity of semiconductor devices, improve contact resistance, etc., and achieve the effect of avoiding silicon diffusion and aggregation
Pending Publication Date: 2021-11-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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Problems solved by technology
[0004] Although NiSi only consumes a small amount of silicon in the process of forming metal silicide, NiSi usually can only withstand temperatures below 600°C
If the temperature is higher than 600°C, the low-resistance NiSi will change to the high-resistance NiSi 2 conversion, leading to an increase in contact resistance and affecting the conductivity of semiconductor devices
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[0027] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.
[0028] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...
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Abstract
The embodiment of the invention provides a preparation method of a metal silicide, a semiconductor device and electronic equipment, relates to the technical field of semiconductors, and can avoid diffusion and aggregation of the metal silicide with relatively high silicon consumption in a second heat treatment process. The preparation method of the metal silicide comprises the steps of providing a silicon substrate which is provided with a doped region; forming a dielectric layer on the silicon substrate, and forming a contact hole in the dielectric layer, wherein the doped region is exposed out of the contact hole; forming a metal layer on the doped region; carrying out first heat treatment; supplementing a material containing a silicon element to the doped region and the region where the metal layer is located through the contact hole; and carrying out secondary heat treatment.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a metal silicide, a semiconductor device, and an electronic device. Background technique [0002] At present, metal silicides are widely used in semiconductor devices such as transistors. Among them, commonly used metal silicides include nickel silicide (NiSi), titanium silicide (TiSi 2 ), cobalt silicide (CoSi 2 )Wait. [0003] TiSi 2 and CoSi 2 Although it has strong heat resistance, a large amount of silicon will be consumed in the process of forming metal silicide. When the contact hole is small, for example, the size of the contact hole is less than 20nm, when silicon reacts with the metal to form a metal silicide, the silicon close to the metal is consumed in large quantities, and the silicon far away from the metal gradually diffuses to the area close to the metal and Aggregation, resulting in the unevenness of the lower surface of the f...
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IPC IPC(8): H01L21/285H01L29/45H01L29/78
CPCH01L21/28518H01L29/458H01L29/78
Inventor 金玄永郭挑远徐康元熊文娟高建峰杨涛李俊峰王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI