Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof

A technology of Bragg reflector and avalanche optoelectronics, which is applied in the field of photodetectors, can solve problems such as the influence of light absorption, difficulty in controlling the fringe electric field, and high noise, and achieve the effects of improving responsivity, improving coupling efficiency, and enhancing light absorption

Pending Publication Date: 2021-11-26
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Some new device structures and improvements have been proposed, such as a waveguide APD with a low height profile. Although this structure improves the collection of photogenerated carriers by the fringe electric field, the fringe electric field is difficult to control and will generate high noise. ; For example, a stepped wa

Method used

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  • Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof
  • Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof
  • Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof

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Example Embodiment

[0051] Example 1

[0052] See Figure 1 to Figure 4 , figure 1 It is a schematic structural diagram of an avalanche photodiode based on a multi-period Bragg mirror provided by an embodiment of the present invention; figure 2 Yes figure 1 The XZ plane cross-sectional view of the multi-period Bragg mirror-based avalanche photodiode shown; image 3 Yes figure 1 A cross-sectional view of the YZ plane of the multi-period Bragg mirror-based avalanche photodiode shown; Figure 4 Yes figure 1 XY plane cross-sectional view of the multi-period Bragg mirror-based avalanche photodiode shown. The avalanche photodiode includes anode 1, Ge electrode contact layer 2, absorption layer 3, charge layer 4, multiplication layer 5, cathode 6, SOI substrate, protective layer 10, first multi-period Bragg mirror 11, second multi-period Bragg mirror Bragg mirror 12 , third multi-period Bragg mirror 13 and optical waveguide 14 .

[0053] The SOI substrate sequentially includes Si substrate 9, S...

Example Embodiment

[0075] Embodiment 2

[0076] On the basis of the above embodiments, this embodiment provides a method for preparing an avalanche photodiode based on a multi-period Bragg mirror, which is used to prepare the avalanche photodiode described in the first embodiment. like Figure 8 As shown, the preparation method of this embodiment includes:

[0077] S1: Select an SOI substrate and form a third multi-period Bragg mirror on top of it, where the third multi-period Bragg mirror is SiO 2 / Si laminated structure;

[0078] Specifically, an SOI substrate is selected, and the oxidation and growth of Si material are repeated on the top of the SOI substrate to form a structure composed of SiO 2 A third multi-period Bragg mirror composed of a / Si stacked structure, and the topmost layer of the third multi-period Bragg mirror is made of Si material.

[0079] S2: performing ion implantation on the Si material on the top of the third multi-period Bragg mirror to form a Si electrode contact ...

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Abstract

The invention discloses an avalanche photodiode based on a multi-period Bragg reflector and a preparation method thereof. The avalanche photodiode comprises an anode, a Ge electrode contact layer, an absorption layer, a charge layer, a multiplication layer, a cathode, an SOI substrate, a protection layer, a first multi-period Bragg reflector, a second multi-period Bragg reflector, a third multi-period Bragg reflector and an optical waveguide, wherein the third multi-period Bragg reflector is stacked in the SOI substrate; and the cathode comprises a first cathode part and a second cathode part which are arranged on the upper surface of the SOI substrate, the first multi-period Bragg reflector is located between the first cathode part and a laminated structure formed by the multiplication layer and the charge layer, and the second multi-period Bragg reflector is located between the second cathode part and the laminated structure. According to the avalanche photodiode, the strong reflection effect of the multi-period Bragg reflector is utilized, the coupling efficiency of light can be improved, the light absorption of a device is enhanced, and the responsivity of the device is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to an avalanche photodiode based on a multi-period Bragg reflector and a preparation method thereof. Background technique [0002] With the rapid development of today's informatization and Internet business, optical fiber communication system, as one of the main technical pillars of informatization, has become a very important strategic industry. With the rapid development of optical fiber communication and quantum communication technology, there is an urgent need for high-speed, long-distance, and low-cost optical fiber communication systems. [0003] One of the important components of optical fiber communication is the photodetector, which uses the principle of the photoelectric effect to respond to the received optical signal and convert it into an electrical signal output. In order to realize high-performance and low-cost optical fiber communication, there is...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/107H01L31/18
CPCH01L31/02161H01L31/1075H01L31/1804
Inventor 张军琴刘蒙单光宝杨银堂
Owner XIDIAN UNIV
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