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IGBT with low break-over voltage and high latch-up resistance and preparation method thereof

A high-voltage, anti-latch-up technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as difficult process implementation

Pending Publication Date: 2021-11-30
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This scheme IGBT can achieve high breakdown voltage under high N well concentration, but this design requires a special process platform, and the process is difficult to realize

Method used

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  • IGBT with low break-over voltage and high latch-up resistance and preparation method thereof
  • IGBT with low break-over voltage and high latch-up resistance and preparation method thereof
  • IGBT with low break-over voltage and high latch-up resistance and preparation method thereof

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Effect test

Embodiment 1

[0087] Embodiment 1 of the present invention provides an IGBT with low turn-on voltage and high latch-up resistance, which has a high-voltage terminal (collector electrode Collector), a low-voltage terminal (emitter electrode Emitter) and a control terminal (gate electrode Gate). structured as Figure 5As shown, it includes: transparent collector region 1 (Collector P+), N-type field stop layer 2 (N field stop), drift region 3 (Ndrift), where transparent collector region 1 is connected to the collector electrode; drift region 3 is located Above the transparent collector region 1 , the N-type field stop layer 2 is located between the transparent collector region 1 and the drift region 3 , and the concentration of the N-type field stop layer 2 is higher than that of the drift region 3 . The IGBT also includes a carrier storage layer 4 (Nwell), a channel body region P well 5 (Pwell), a P+ emitter region 7 (P+), an N+ emitter region 6 (N+), wherein the carrier storage layer 4 form...

Embodiment 2

[0095] Embodiment 2 of the present invention provides an IGBT with low turn-on voltage and high latch-up resistance, such as Figure 9 shown. The IGBT has two separation trenches 30 between two trench gates 20 . Those skilled in the art will understand that the use of two separation trenches is just an example, and any number of separation trenches 30 can be added between the trench gates 20 . The advantage of this structure is that the distance between the trenches can be further reduced, and higher doping of the carrier storage layer can be used when the breakdown voltage remains unchanged. The doping concentration of the carrier storage layer is greater than 1E16cm -3 . In order to ensure the breakdown voltage, the distance between the trench 30 and the trench gate is less than 2um, ideally less than 1um, and in the two-dimensional direction, the distance between the separation trenches is less than 2um, ideally less than 1um.

[0096] exist Figure 5 and Figure 9 In...

Embodiment 3

[0098] Embodiment 3 of the present invention provides an IGBT with low turn-on voltage and high latch-up resistance, such as Figure 10 shown. The IGBT has a trench structure 30, and the trench 30 is connected to the gate electrode.

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Abstract

The invention provides an IGBT with a low break-over voltage and high latch-up resistance and a preparation method of the IGBT. Separated trenches are formed between the trench gates in the active region, the trenches can allow a carrier storage layer to have higher doping under the condition that the breakdown characteristic, the reliability and the turn-off loss are not obviously changed, the break-over voltage is further reduced, and compromised improvement of turn-on voltage and turn-off loss is realized; the trenches help push a depletion region and potential into a deeper substrate away from the bottom ends of the trenches, reduces the electric field intensity of the bottom ends of the trenches, improves the breakdown characteristic, and reduces the influence of the reliability associated with a high electric field at the bottoms of the trenches, such as thermoelectric carrier degradation or time-dependent dielectric breakdown. And a shallow groove P+ emitter region is arranged in the middle of the separation groove, so the latch-up resistance is improved, and the safe working region of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an IGBT with low turn-on voltage and high latch-up resistance and a preparation method thereof. Background technique [0002] Due to the low turn-on voltage and simple driving circuit, insulated-gate bipolar transistors (IGBTs) are increasingly used in various high-voltage switching devices, such as motor controls, inverters, and switch-mode power supplies. Trench gate IGBT has a higher channel density, no parasitic JFET region and stronger carrier injection enhancement (IE) effect, which is the development trend of the active region. Among them, the carrier injection enhancement (IE) effect can reduce the turn-on voltage without much influence on the turn-off loss, and is a key factor to improve the compromise between IGBT turn-off loss and turn-on voltage. [0003] figure 1 It is an existing trench gate IGBT structure, including a collector P+ region 1, an N...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06H01L29/36H01L21/331
Inventor 高明超刘江李立
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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