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Surface acoustic wave enhanced deep ultraviolet detector and preparation method thereof

A surface acoustic wave and deep ultraviolet technology, which is applied in the field of deep ultraviolet detection, can solve the problems of low responsivity, low detection rate, and the detection accuracy needs to be improved, and achieves good ohmic contact, which is beneficial to input and output, and excellent deep ultraviolet detection. effect of function

Active Publication Date: 2021-11-30
BEIJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the disadvantages of low responsivity, low detection rate and detection accuracy of deep ultraviolet photodetectors in the prior art, the present invention designs a deep ultraviolet detection based on surface acoustic wave-enhanced semiconductor film-electrode structure after careful research. device

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  • Surface acoustic wave enhanced deep ultraviolet detector and preparation method thereof
  • Surface acoustic wave enhanced deep ultraviolet detector and preparation method thereof
  • Surface acoustic wave enhanced deep ultraviolet detector and preparation method thereof

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preparation example Construction

[0031] The invention also discloses a method for preparing a surface acoustic wave enhanced deep ultraviolet detector, which includes the following steps:

[0032] Provide piezoelectric substrate;

[0033] epitaxially growing a semiconductor thin film on a surface of the piezoelectric substrate;

[0034] Two pairs of ohmic electrodes are made respectively on the piezoelectric substrate and the surface of the semiconductor thin film.

[0035] Further, the piezoelectric substrate is preferably a lithium niobate substrate; the semiconductor thin film covers part of the surface of the lithium niobate substrate, and a pair of ohmic electrodes are located on the lithium niobate substrate not covered by the lithium niobate substrate. On the surface covered by the semiconductor film, another pair of ohmic electrodes is located on the other surface of the semiconductor film opposite to the lithium niobate substrate, so that the two pairs of ohmic electrodes are located between the lit...

Embodiment 1

[0054] The preparation method of the surface acoustic wave enhanced deep ultraviolet detector of the present invention comprises the following steps:

[0055] Grow Ga on Y-128 lithium niobate substrate 1 by MOCVD or magnetron sputtering 2 o 3 Semiconductor film 2; in the Ga 2 o 3 A photoresist is coated on the film.

[0056] Using contact UV lithography method on Y-128 lithium niobate substrate and Ga 2 o 3 The pattern of the interdigital transducer is made on the surface of the film, and the photoresist is removed at the position where the interdigital transducer is formed.

[0057] A 20nm Ti film and a 200nm Au film were evaporated by an electron beam evaporation method to prepare the ohmic electrode 3 and the ohmic electrode 4 as two interdigital transducers.

[0058] For the surface acoustic wave emitted by the surface of the deep ultraviolet detector with the substrate epitaxial film-electrode structure prepared in the above embodiment 1, use the N5171B RF analog si...

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Abstract

The invention discloses a surface acoustic wave enhanced deep ultraviolet detector and a preparation method thereof. The surface acoustic wave enhanced deep ultraviolet detector sequentially comprises a lithium niobate substrate, a semiconductor film and two pairs of ohmic electrodes arranged on the surface of the semiconductor film, wherein one pair of ohmic electrodes is used for receiving and propagating surface acoustic waves and enabling the surface acoustic waves to modulate the energy band structure of thin film and the substrate so as to improve the number of photon-generated carriers and the transmission efficiency, and the other pair of ohmic electrodes is used for collecting the photon-generated carriers, converting the photon-generated carriers into electric signals to be output, and communicating with an external parameter analyzer to evaluate a series of performance indexes such as responsivity, detectivity and the like of the detector to optical radiation. According to the surface acoustic wave enhanced deep ultraviolet detector, a series of performance indexes such as responsivity and the like of the detector can be remarkably enhanced through external stimulation of surface acoustic waves.

Description

technical field [0001] The invention relates to the technical field of deep ultraviolet detection, in particular to a surface acoustic wave enhanced deep ultraviolet detector and a preparation method thereof. Background technique [0002] Deep ultraviolet photodetectors have the advantages of small size, convenient use, and power saving, and can work independently of external power sources. Deep ultraviolet photodetectors are sensitive to light in the 220–280 nm range and have many military and commercial applications, such as optical tracking, optical communications, and imaging. Wide-bandgap semiconductors have some distinct advantages over conventional silicon-based deep-UV detectors and photomultiplier tubes due to their superior material and electrical properties, including high thermal / chemical stability, excellent radiation resistance characteristics, and the detection wavelengths that correspond directly to the solar blind zone. As a result, long-wavelength light d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/0224H01L31/18
CPCH01L31/09H01L31/0224H01L31/18Y02P70/50
Inventor 吴真平张清怡夏翰驰
Owner BEIJING UNIV OF POSTS & TELECOMM