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Method for purifying semiconductor-grade graphite powder

A purification method and graphite powder technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problems of low removal rate of metal element and metal compound impurities, achieve low price, high removal rate, and reduce risk Effect

Active Publication Date: 2021-12-03
SHANXI SEMICORE CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention overcomes the deficiencies of the prior art, and proposes a purification method for semiconductor-grade graphite powder, which solves the problem of low removal rate of high-boiling-point metal elements and metal compound impurities in graphite powder

Method used

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  • Method for purifying semiconductor-grade graphite powder
  • Method for purifying semiconductor-grade graphite powder
  • Method for purifying semiconductor-grade graphite powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1. Put the graphite powder to be purified in a graphite crucible, place the graphite crucible in an induction heating furnace, seal it, evacuate it, and fill it with argon. The flow rate of argon gas is 2 L / min, and the control pressure is 800 mbar.

[0024] 2. Heating, slowly raise the temperature of the furnace body to 2000 °C at a heating rate of 10 °C / min, keep the temperature constant, pump air, and reduce the pressure of the furnace body from 800 mbar to a near-vacuum state at a pumping speed of 10 mbar / min. Then fill with argon, and fill the furnace body pressure to 800 mbar at a filling speed of 2 L / min. This is a pumping and charging cycle, and this cycle is repeated three times. The purpose is to first remove the low boiling point in the graphite powder before passing hydrogen chloride. Impurities.

[0025] 3. Introduce hydrogen chloride gas. Before ventilating, first pump the chamber to a vacuum state at a high temperature of 2000 ℃, and then pass the mixed g...

Embodiment 2

[0032] 1. Put the graphite powder to be purified in a graphite crucible, place the graphite crucible in an induction heating furnace, seal it, evacuate it, and fill it with argon. The argon flow rate is 2 L / min, and the pressure is controlled at 700 mbar.

[0033] 2. Heating, slowly raise the temperature of the furnace body to 2200 °C at a heating rate of 10 °C / min, keep the temperature constant, pump air, and reduce the pressure of the furnace body from 700 mbar to a near-vacuum state at a pumping speed of 10 mbar / min. Then argon is filled, and the pressure of the furnace body is filled to 700 mbar at a filling rate of 2 L / min. This is a pumping and charging cycle, and this cycle is repeated three times.

[0034] 3. Introduce hydrogen chloride gas. Before ventilating, first pump the chamber to a vacuum state at a high temperature of 2200 ℃, and then pass the mixed gas of hydrogen chloride and argon into the chamber at a gas flow rate of 1 L / min. The volume ratio of hydrogen c...

Embodiment 3

[0037] 1. Put the graphite powder to be purified in a graphite crucible, place the graphite crucible in an induction heating furnace, seal it, evacuate it, and fill it with argon. The argon flow rate is 2 L / min, and the control pressure is 900 mbar.

[0038] 2. Heating, slowly raise the temperature of the furnace body to 1800 °C at a heating rate of 10 °C / min, keep the temperature constant, pump air, and reduce the pressure of the furnace body from 900 mbar to a near-vacuum state at a pumping speed of 10 mbar / min. Then argon is filled, and the pressure of the furnace body is filled to 900 mbar at a filling rate of 2 L / min. This is a pumping and charging cycle, and this cycle is repeated three times.

[0039] 3. Introduce hydrogen chloride gas. Before ventilating, first pump the chamber to a vacuum state at a high temperature of 1800 ℃, and then pass the mixed gas of hydrogen chloride and argon into the chamber at a gas flow rate of 1 L / min. The volume ratio of hydrogen chlorid...

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Abstract

The invention discloses a method for purifying semiconductor-grade graphite powder, and belongs to the technical field of semiconductor material processing. The method comprises the following steps: placing graphite powder to be purified in an induction heating furnace, exhausting a cavity of the induction heating furnace to a vacuum state under the condition of 1800-2200 DEG C, then introducing a mixed gas of hydrogen chloride and argon into the cavity until the pressure is 700-900 mbar, and maintaining for 2-4 hours to allow the hydrogen chloride gas in the cavity to fully react with impurities, and then, exhausting to reduce the pressure of the furnace body to a near-vacuum state. The problem that the removal rate of high-boiling-point metal simple substances and metal compound impurities in the graphite powder is low is solved; and the danger of the whole purification process is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material processing, in particular to a method for purifying semiconductor-grade graphite powder. Background technique [0002] In recent years, 5G communication technology, the promotion of new energy vehicles, and optoelectronic applications have promoted the vigorous development of the third-generation semiconductor industry. Among the third-generation semiconductor materials, wide-bandgap group IV compounds represented by silicon carbide (SiC) are the "core" of solid-state light sources, power electronics, and microwave radio frequency devices, and are becoming a new strategic highland for the global semiconductor industry. [0003] SiC high-purity powder is the raw material for growing SiC single crystal, and its product purity directly affects the growth quality and electrical properties of silicon carbide single crystal. Therefore, in the production process of SiC powder, the purity ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/215
CPCC01B32/215
Inventor 许正赵丽霞魏汝省马康夫方芃博陈琪李刚张辰宇靳霄曦张馨丹
Owner SHANXI SEMICORE CRYSTAL CO LTD
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