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Quality judgment method for ingot casting monocrystalline silicon block and ingot casting monocrystalline silicon block

A judging method and silicon block technology, which is applied to the quality judgment of ingot monocrystalline silicon blocks, and in the field of ingot monocrystalline silicon blocks, can solve problems that affect the efficiency of cells, cannot be used for product quality control, and low grades

Pending Publication Date: 2021-12-07
LDK SOLAR XINYU HI TECH XINYU CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the raw material of ingot monocrystalline silicon block is lower than that of Czochralski single crystal (the impurity content in the raw material is higher), and the growth method is different from that of Czochralski single crystal, there will be some dislocations inside it. Seriously affect the efficiency of the cells subsequently prepared by the ingot monocrystalline silicon block. If the head removal is carried out according to the judgment method of the minority carrier lifetime of the ingot polycrystalline silicon block and the resistivity of the Czochralski single crystal, there will be a large error
In addition, the existing dislocation detection methods are mainly through chemical corrosion, physical polishing and then microscope observation, which can only detect the dislocation density in a local area of ​​a single silicon wafer at a time, which is mainly used for research and development guidance, and cannot be used for large-scale Quality control of production products

Method used

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  • Quality judgment method for ingot casting monocrystalline silicon block and ingot casting monocrystalline silicon block
  • Quality judgment method for ingot casting monocrystalline silicon block and ingot casting monocrystalline silicon block
  • Quality judgment method for ingot casting monocrystalline silicon block and ingot casting monocrystalline silicon block

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Select the silicon block in the central area of ​​the original ingot single crystal with (100) crystal orientation, and remove 30mm of its head;

[0059] Such as Figure 4 As shown in the figure on the left, the photoluminescence picture of the head end face of the ingot monocrystalline silicon block is measured by a photoluminescence tester, and the black filament area ratio value D of the photoluminescence picture of the head end face is calculated S 66.5%;

[0060] Measure and calculate the end face area S=158×158 of the ingot monocrystalline silicon block;

[0061] Calculated by the height of the silicon ingot and the solidification end time of the silicon block in the central area, the crystal growth rate is 0.86cm / h.

[0062] Set the black wire area ratio value D of the preset end face L is 15.25%, and S=158×158, D S =66.5%, ⍺=45 / (2×0.86) into L (D L , ⍺), we can know that:

[0063] ,

[0064] After the head of the silicon block is removed by 77mm, the ph...

Embodiment 2

[0066] Select the silicon block in the edge region of the original ingot single crystal with (100) crystal orientation, and remove 50mm of its head;

[0067] Such as Figure 5 As shown in the figure on the left, the photoluminescence picture of the head end face of the ingot monocrystalline silicon block is measured by a photoluminescence tester, and the black filament area ratio value D of the photoluminescence picture of the head end face is calculated S 84%;

[0068] Measure and calculate the end face area S=158×158 of the ingot monocrystalline silicon block;

[0069] Calculated by the height of the silicon ingot and the solidification end time of the silicon block in the central area, the crystal growth rate is 0.778cm / h.

[0070] Set the black wire area ratio value D of the preset end face L is 11.5%, and S=158×158, D S =84%, ⍺=45 / (2×0.778) into L (D L , ⍺), we can know that:

[0071]

[0072] After the head of the silicon block is removed by 93mm, the photolumin...

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Abstract

The invention discloses a quality judgment method of an ingot casting monocrystalline silicon block and the ingot casting monocrystalline silicon block. The quality judgment method comprises the following steps: (1) uniformly removing about 30 to 60mm of the head of the ingot casting monocrystalline silicon block; (2) measuring a photoluminescence test picture of the head end face of the ingot casting monocrystalline silicon block by using a photoluminescence tester, and calculating to obtain a black filament area proportion value DS of the photoluminescence test picture; (3) measuring and calculating the end face area S of the ingot casting monocrystalline silicon block; (4) establishing a black filament growth calculation model, and determining a relational expression L (DL, alpha) of a silicon block removal length L and a preset end face black filament area proportion value DL, wherein alpha is a dislocation growth angle; (5) according to the preset end face black filament area proportion value DL and the relational expression L (DL, alpha), calculating the value of the silicon block removal length L; and (6) removing the head of the ingot casting monocrystalline silicon block according to the value of the removal length L of the silicon block. According to the method, photoluminescence testing is combined with growth characteristics of the ingot casting monocrystalline silicon ingot, and a brand-new removal mode of different black filament proportions at the head of the ingot casting monocrystalline silicon block is provided.

Description

technical field [0001] The invention relates to the technical field of preparation of ingot single crystal silicon ingots, in particular to a method for judging the quality of ingot single crystal silicon ingots and ingot single crystal silicon ingots. Background technique [0002] The growth of ingot polycrystalline nucleation is small grain nucleation, which grows in the form of vertical columnar crystals. The growth quality of different regions is similar, and due to the segregation effect, there are more impurities in the head, so the head removal judgment method of ingot polycrystalline silicon block It is mainly based on the judgment of the minority carrier lifetime that characterizes the amount of impurities in the silicon block; while the Czochralski single crystal is generally a dislocation-free single crystal, once there are impurities or dislocations, it will break and grow into polycrystals, and its head defects are mainly Poor resistivity caused by oxygen donors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/63C30B29/06C30B15/00
CPCG01N21/63C30B29/06C30B15/00
Inventor 罗鸿志何亮李建敏张细根范立峰徐云飞甘胜泉
Owner LDK SOLAR XINYU HI TECH XINYU CO LTD