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A 3D printing diamond/metal matrix composite material and its preparation method and application

A composite material and 3D printing technology, which is applied in the field of composite materials, can solve problems such as the inability to prepare high density, diamond damage, and insufficient performance, and achieve the effects of eliminating structural defects, improving the bonding state, and improving the bonding condition

Active Publication Date: 2022-07-12
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, when using the prior art 3D printing technology to manufacture diamond / metal matrix composites; it is impossible to prepare high-density diamond / metal matrix composites, because the preparation of high-density diamond / metal matrix composites requires a larger laser Power, and the laser beam generated by it will cause obvious damage to the diamond, and some may have been graphitized. If the laser power used is small, although the thermal damage of the diamond is small, the density is low (70-80%) and the performance is insufficient.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Preparation of Core-Shell Structure Doped Diamond

[0042] Using 150μm single crystal diamond particles as the raw material, a polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is as follows: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0043] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 2μm by controlling the deposition time; during the chemic...

Embodiment 2

[0048] Preparation of Core-Shell Structure Doped Diamond

[0049] Using 150μm single crystal diamond particles as the raw material, a polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is as follows: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0050] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 3μm by controlling the deposition time; during the chemic...

Embodiment 3

[0056] Preparation of Core-Shell Structure Doped Diamond

[0057] Using 200μm single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0058] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 2μm by controlling the deposition time; during the chemical vapor ...

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PUM

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Abstract

The invention discloses a 3D printing diamond / metal matrix composite material and a preparation method and application thereof. The 3D printing diamond / metal matrix composite material comprises a core-shell structure doped diamond, a metal-based material and additives. Structure doped diamond includes core, transition layer, outer shell, coating, porous layer and modification layer. The material preparation method is to mix diamond, metal matrix and additives evenly and then perform 3D printing according to the three-dimensional CAD slice model, and finally obtain the composite material designed by the model; the metal matrix obtained by 3D printing the diamond / metal matrix composite material of the present invention Metallurgical bonding with the diamond surface can improve the bonding strength of diamond / metal matrix, thereby improving the performance of composite materials and diamond tools, and the core-shell structure doped diamond has good ablation resistance, which can effectively avoid and reduce 3D printing. Diamond thermal damage during forming.

Description

technical field [0001] The invention belongs to the field of composite materials, and in particular relates to a 3D printing diamond / metal matrix composite material and a preparation method and application thereof. Background technique [0002] With the rapid development of science and technology, the power and integration of electronic equipment used in aerospace, military, industry, national production and other fields are getting higher and higher, and heat dissipation has become an important factor restricting the development of these industries. Especially with the advent of the 5G communication era, the integration of electronic and semi-finished devices has increased geometrically, which has led to a rapid increase in the heat density of electronic devices. Studies have shown that for every 10 °C increase in the temperature of electronic components, the failure rate increases by about one percent. In addition, 55% of failures in electronic equipment are caused by over...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F10/28B22F1/12B22F10/64B33Y10/00B33Y70/10B33Y40/20
CPCB22F10/28B22F10/64B33Y10/00B33Y70/10B33Y40/20Y02P10/25C22C26/00C01B32/25C23C16/278C22C33/0228C22C33/0278B33Y50/02B33Y80/00B22F10/32B22F10/36B22F10/366C23C16/28C23C14/185C22C30/02C22C9/00C22C19/05C22C30/00B22F2998/10C22C1/05B22F10/322B22F10/38B22F10/34B22F3/1003B22F3/105B22F2201/11B22F2201/20B22F2203/11B22F2207/01
Inventor 魏秋平周科朝马莉黄开塘李俊
Owner CENT SOUTH UNIV
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