5results about How to "Eliminate structural defects" patented technology

The application discloses an on-chip optical amplifier and a preparation method thereof. The on-chip optical amplifier comprises an optical waveguide, an optical isolation layer, a substrate and an ion-doped layer, wherein the ion-doped layer comprises a doped layer medium and doped ions, the optical isolation layer is located between the substrate and the ion-doped layer; the ion-doped layer is tightly covered outside the optical waveguide, or is located between the optical waveguide and the optical isolation layer and is tightly attached to the optical waveguide. Compared with a conventional optical amplification mode using an erbium-doped optical fiber amplifier, an ion-doped waveguide and the like, the application can realize an integrated and chipped optical amplifier, has the characteristics of CMOS compatibility, and can realize optical-matter interaction without doping the optical waveguide device, eliminates the problem of introducing a crystal structure defect of the optical waveguide caused by direct ion doping, and guarantees optical index parameters such as dispersion and loss of the integrated photonic device.

The invention relates to the technical field of inorganic non-metallic materials, discloses a composite calcium source calcium zinc phosphate refractory material, a preparation method and application, and aims to solve the technical problems that the reaction is out of control, the water-soluble substance residue is high and the performance is difficult to consider in the preparation of the traditional calcium zinc phosphate material. Calcium hydroxide and calcium carbonate are adopted to form a composite calcium source, and a dynamic time-sharing feeding process is matched and comprises the following steps: firstly, stirring a phosphoric acid aqueous solution and a zinc oxide-calcium hydroxide mixture at 20-35 DEG C for 20-40 minutes to form initial slurry, then adding calcium carbonate accounting for 0-30% of the total calcium mole number at an initial thickening point of the slurry, continuing to stir for 20-40 minutes, and finally, adding calcium carbonate accounting for 0-30% of the total calcium mole number at the initial thickening point of the slurry; and carrying out suction filtration, and drying at 100-110 DEG C for 1.5-2.5 hours to obtain a finished According to the method, the operable time is prolonged by more than 200%, the content of water-soluble substances is reduced by more than 50%, high early strength and structural compactness are both considered, and the method is suitable for the fields of high-end anticorrosive coatings and the like and has remarkable process and performance advantages.

The application provides a processing method of a reaction chamber, comprising the following steps: providing a reaction chamber; the inner wall surface of the reaction chamber is provided with a clean plasma-erosion-resistant coating; a first deposition step: depositing an amorphous carbon layer on the surface of the plasma-erosion-resistant coating in a carbon-based process gas atmosphere, so as to fill the pores of the plasma-erosion-resistant coating until the upper surface of the amorphous carbon layer is higher than the upper end surface of the pores; and a second deposition step: depositing a silicon dioxide layer on the surface of the amorphous carbon layer in a silicon-based process gas atmosphere, so as to protect the plasma-erosion-resistant coating. The processing method of the reaction chamber can fill the pores of the plasma-erosion-resistant coating with the amorphous carbon layer, completely cover the plasma-erosion-resistant coating, facilitate uniform deposition of the silicon dioxide layer in the subsequent process, reduce or even avoid the peeling of the silicon dioxide layer and the plasma-erosion-resistant coating in the process, provide a cleaner chamber environment for semiconductor preparation, and improve the performance of semiconductor devices.

The application relates to the technical field of traffic network topology optimization and graph sequence technology, and particularly relates to a traffic network optimization method based on a graph sequence problem of a weighted graph, which comprises the following steps: S1: acquiring a network topology structure and a degree sequence of a target traffic network and a preset weighted graph type; S2: selecting a corresponding weighted graph solving algorithm based on the preset weighted graph type; S3: judging whether the degree sequence of the target traffic network is a graph sequence based on the weighted graph solving algorithm; if yes, executing step S4; S4: generating a weighted graph of a corresponding type based on the selected weighted graph solving algorithm and the degree sequence of the target traffic network; and S5: optimizing the network topology structure of the target traffic network based on the weighted graph of the target traffic network, and generating an optimized traffic network. The application can improve the accuracy and reliability of traffic network topology optimization.

The application relates to a preparation method of high-insulation shielding gravure ink for precision electronics, and relates to the technical field of gravure ink. Modified polyimide resin, saturated polyester resin and organic bentonite are mixed to obtain a pre-activation mixture; mixed solvent, fluorine-containing dispersant, silane coupling agent, modified nano boron nitride and nano silicon dioxide are ultrasonically mixed to obtain a nanoscale composite dispersion liquid; the nanoscale composite dispersion liquid, carbon black, micron mica powder, leveling agent and defoaming agent are added into the pre-activation mixture, high-speed shearing, grinding, aging, filtering and high-insulation shielding gravure ink is obtained; the modified nano boron nitride is prepared from nano boron nitride, 4,4'-dimercaptodiphenyl ether and allyltrimethoxysilane. The prepared gravure ink can significantly improve the insulation performance and shielding force of the ink.