Unlock instant, AI-driven research and patent intelligence for your innovation.

Waveguide integrated plasmon assisted field emission detector

A plasma and photodetector technology, applied in semiconductor devices, optical radiation measurement, coupling of optical waveguides, etc., can solve problems such as limiting photodetectors

Active Publication Date: 2021-12-10
CALIFORNIA INST OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These carriers must travel to the electrical contacts to be detected, and this carrier transit time typically limits the final frequency response of the photodetector

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Waveguide integrated plasmon assisted field emission detector
  • Waveguide integrated plasmon assisted field emission detector
  • Waveguide integrated plasmon assisted field emission detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] According to the teachings of the present disclosure, light can be used to generate very high electromagnetic fields. Such a large light field can in turn be used to modify the Fowler-Nordheim emission characteristics of the field emitter. For example, by illuminating gold field emitters with light, their electronic properties can be altered and photoactive electronic amplifiers can be obtained that can be used as high-frequency photodetectors.

[0019] Embodiments according to the present disclosure can be realized by introducing a gap, for example, between two gold contacts forming a plasmonic waveguide. A plasmonic waveguide can be efficiently coupled with an on-chip photonic layer consisting of a high-index dielectric waveguide by overlapping a metal layer on top of the high-index waveguide, with a gap between the metal layer and the high-index waveguide. Thin, lower index dielectric layers such as silicon dioxide. figure 2 Exemplary modeling results of the optic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

Light detectors that combine field emission with light focusing by surface plasmon polaritons. Methods and devices that allow detection and measurement of light at high frequencies in the THz range are described. The disclosed devices include plasmonic metal contacts with a narrow nanometer-sized gap to couple an optical waveguide mode into a plasmonic mode thereby generating filed emission currents by biasing the contacts.

Description

[0001] Cross References to Related Applications [0002] This disclosure claims priority to US Provisional Application 62 / 812,748, filed March 1, 2019, the contents of which are hereby incorporated by reference in their entirety. technical field [0003] Throughout the document, the term "surface plasmon polariton" is used to refer to quasi-particles (ie the combination of electromagnetic waves in dielectrics and the collective motion of electrons in metals). The combination of the two produces the wave phenomenon, the surface plasmon, which propagates along the surface of dielectrics and metals. [0004] The present disclosure relates to photodetectors, and more particularly, to plasmon-assisted field emission detectors, a new class of photodetectors that combine the physics of field emission with the focusing of light by surface plasmons characteristic. Background technique [0005] Photodetectors include devices such as photomultiplier tubes, bolometers, and semiconduct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/08G01J1/02G02B6/122
CPCG02B6/1226B82Y20/00B82Y15/00G02B6/30G02B6/12004G02B2006/12123G02B2006/12061G02B2006/12142G01N2201/0873H01L31/02327G01J1/0425
Inventor W.M.琼斯L.B.德罗斯A.谢勒
Owner CALIFORNIA INST OF TECH