Silicon-based active matrix type organic light-emitting display and manufacturing method thereof

Abstract

The invention discloses a silicon-based active matrix type organic light-emitting display and a manufacturing method thereof. The anode structure of the silicon-based active matrix type organic light-emitting display comprises a substrate, a reflection anode metal layer and a pixel isolation layer, the reflection anode metal layer and the pixel isolation layer sequentially grow on the substrate, and the reflection anode metal layer forms a step structure on the substrate; and the pixel isolation layer covers the substrate between the adjacent reflection anode metal layer, and the pixel isolation layer divides the reflection anode metal layer into a plurality of pixel electrodes which are isolated from one another. The manufacturing method comprises the step that the reflective anode metal layer and the pixel isolation layer are manufactured in a two-time patterning mode. On the basis of increasing the height of the anode step structure, the contact between the pixel edge and an organic film layer is avoided, the electrical crosstalk between the pixels can be reduced, the high color gamut is realized, and the display defect of the device is avoided.

Description

technical field [0001] The invention belongs to the technical field of OLED displays, and in particular relates to a silicon-based active matrix organic light-emitting display and a manufacturing method thereof. Background technique [0002] Organic light-emitting diode (OLED) display is a self-luminous display device that displays images by using light-emitting organic light-emitting diodes. Due to its advantages of thinness, low energy consumption, and high color gamut, it is widely used in mobile phones and televisions. Silicon-based OLED microdisplays use monocrystalline silicon as their driving backplane, have high carrier mobility, and can achieve very high resolution, and have broad application prospects in the fields of AR and VR. Compared with the glass-based OLED adopting the bottom-emission scheme, the silicon-based OLED device adopts the top-emission scheme, so an anode with high reflectivity is required to achieve high brightness of the device. Al or Ag is usual...

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Problems solved by technology

At the same time, due to the high resolution of the device, the traditional fine metal mask (FMM) can no longer achieve good alignment. Therefore, the whole-surface evaporation scheme is used in the organic evaporation, which causes the following two problems: one is in the dry The edge of the pixel formed by etching the metal, because its state is different from the front of the reflective anode, and there are steps, in the subsequent evaporation of the organic material, it will greatly affect the thickness of the organic material at the step and the front of the reflective anode, which is related to the step There is a risk of causing display quality problems due to direct contact with the metal; the second is that the organic material evaporates on the entire surface of the anode substrate, and the formed film is connected between pixels, causing electrical crosstalk between pixels and limiting the further development of the color gamut of the device. promote

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