Wavelength switching type semiconductor laser

A wavelength switching and semiconductor technology, which is applied in the field of wavelength switching semiconductor lasers, can solve the problems of high production cost, complex production process, and insufficient compactness and integration, and achieve compact structure, high compactness, reduced production cost and production Effect of Difficulty of Craft

Active Publication Date: 2021-12-14
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0008] The purpose of the present invention is to propose a wavelength-switched semiconductor laser to overcome the insufficient compactness and i

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  • Wavelength switching type semiconductor laser
  • Wavelength switching type semiconductor laser
  • Wavelength switching type semiconductor laser

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Embodiment Construction

[0028] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same blocks are denoted by the same reference numerals. With the same reference numerals, their names and functions are also the same. Therefore, its detailed description will not be repeated.

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.

[0030] In order to solve the problems of insufficient compactness and integration, high manufacturing cost and complicated manufacturing process in the dual-wavelength narrow-linewidth laser of the prior art, the present invention adopts an ...

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Abstract

The invention provides a wavelength switching type semiconductor laser. The laser comprises a gain chip, an external cavity frequency selection device and a wave plate, an F-P resonant cavity is formed between the external cavity frequency selection device and the gain chip, the structure of the external cavity frequency selection device is a planar waveguide grating, and based on the birefringence effect of the planar waveguide grating, a TE mode and a TM mode reflected by the external cavity frequency selection device are split; and the wave plate is arranged in the F-P resonant cavity, the loss and gain of the TE mode and the TM mode in the F-P resonant cavity are adjusted by rotating the wave plate, and lasing switching of the TE mode and/or the TM mode in the F-P resonant cavity is achieved. The laser has the characteristics of high compactness and high integration, and can realize the modularization of butterfly-shaped packaging and the miniaturization of devices; and meanwhile, the preparation process of the key component is simple, and the selection of two modes can be realized by a single frequency selection device prepared by only one mask plate, so that the cost is further reduced.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a wavelength switching semiconductor laser. Background technique [0002] Dual-wavelength narrow-linewidth semiconductor lasers have the characteristics of dual frequency, high coherence, low phase noise and high frequency stability, making them widely used in wavelength division multiplexing systems, coherent optical communications, laser coherent detection, fiber optic hydrophone detection and microwave Fields such as photonics have shown significant advantages and application value. Especially for the transmission rate and bandwidth limitations faced by ultra-high-speed optical communication systems, the potential solution to this problem is to use millimeter-wave or even terahertz-wave communication systems, and high-coherence dual-wavelength narrow-linewidth lasers are obtained through nonlinear The difference frequency is an ideal light source for generating...

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Application Information

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IPC IPC(8): H01S3/08H01S3/0933H01S3/094
CPCH01S3/0809H01S3/0933H01S3/094019
Inventor 陈超罗曦晨宁永强王立军
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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