Preparation method of semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device preparation, can solve problems such as charge avalanche breakdown
Pending Publication Date: 2021-12-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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[0004] The main purpose of the present invention is to provide a method for preparing a semiconductor device, which aims to solve the problem of avalanche breakdown of the device due to charge accumulation in the edge region of the injection under a high-voltage working environment
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[0023] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.
[0024] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...
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The invention relates to a preparation method of a semiconductor device. The invention discloses a preparation method of a semiconductor device. The preparation method comprises the following steps: providing a doped SiC epitaxial wafer; forming a first mask layer on the SiC epitaxial wafer; performing graphical processing on the first mask layer to expose the first ion implantation region; performing ion implantation on the first ion implantation region, wherein the implantation type is the same as the doping type of the SiC epitaxial wafer; removing the first mask layer; forming a second mask layer on the SiC epitaxial wafer after the first mask layer is removed; performing graphical processing on the second mask layer to expose a second ion implantation region; performing ion implantation on the second ion implantation region, wherein the implantation type is determined according to the type of an ion implantation structure in the semiconductor device; removing the second mask layer; activating ions injected in the second ion injection region; and manufacturing other structures of the semiconductor device. The method aims at solving the problem that charges are gathered in the second injection edge area to cause breakdown in the avalanche breakdown process of the device.
Description
technical field [0001] The invention relates to the field of semiconductor production, in particular to a method for preparing a semiconductor device. Background technique [0002] The third-generation semiconductor material SiC has the advantages of larger band gap, higher critical breakdown field strength, and high thermal conductivity; compared with silicon power devices under the same conditions, it is more suitable for making high-voltage and high-power semiconductor devices. The core of next-generation high-efficiency power electronics technology. In addition, compared with other third-generation semiconductors such as GaN, SiC can form silicon dioxide through thermal oxidation, which can be replicated or transferred to SiC by the traditional silicon MOSFET process. Therefore, SiC is considered to be an important development direction of a new generation of high-efficiency power electronic devices, and has broad application prospects in new energy vehicles, rail trans...
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IPC IPC(8): H01L21/04
CPCH01L21/0445H01L21/0465H01L29/6606H01L29/66068
Inventor 万彩萍田丽欣桑玲罗松威许恒宇叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI