Semiconductor epitaxial structure and application thereof

Abstract

The invention provides a semiconductor epitaxial structure and application thereof. The structure comprises: a substrate. a first semiconductor layer arranged on the substrate; an active layer arranged on the first semiconductor layer; a second semiconductor layer arranged on the active layer; and a hole injection layer arranged on the second semiconductor layer, wherein the hole injection layer comprises a non-or low-doped gallium nitride layer and/or a doped gallium nitride layer. According to the semiconductor epitaxial structure provided by the invention, the quality of the semiconductor epitaxial structure can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor epitaxial structure and its application. Background technique [0002] Gallium nitride (GaN) is a wide bandgap material with high resistivity. The electrostatic charges generated during the production and transportation of GaN-based diode chips are not easy to disappear, and can generate high electrostatic voltage when accumulated to a certain extent. The positive and negative electrodes of the diode chip on the sapphire substrate are located on the same side of the chip, and the spacing is very small, so the ability to withstand static electricity is very small, and it is very easy to be broken down by static electricity, which affects the life of the device. [0003] GaN / InGaN quantum well barrier regions are used in the active region of the semiconductor epitaxial structure of gallium nitride-based diodes, but due to the difference in lattice constants of GaN / AlGa...

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Problems solved by technology

The positive and negative electrodes of the diode chip on the sapphire substrate are located on the same side of the chip, and the spacing is very small, so the ability to withstand static electricity is very small, and it is very easy to be broken down by static electricity, which affects the life of the device

[0003] GaN / InGaN quantum well barrier regions are used in the active region of the semiconductor epitaxial structure of gallium nitride-based diodes, but due to the difference in lattice constants of GaN / AlGaN two materials, it is easy to produce polarization effects and cause dislocation defects. Defects cannot be effectively controlled, and the line dislocations passing through the GaN / InGaN quantum well barrier region will cause a large number of surface defects and form leakage channels. Surface defects also affect the efficiency of ion doping in the semiconductor layer on both sides of the light-emitting layer, thereby affecting Affect the hole concentration and affect the luminous efficiency of the chip

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