Semiconductor epitaxial wafer, preparation method thereof and microwave communication transistor

Abstract

The invention provides a semiconductor epitaxial wafer, a preparation method thereof and a microwave communication transistor. The semiconductor epitaxial wafer comprises a substrate and a semiconductor layer. The substrate is a semi-insulating compound semiconductor substrate. The semiconductor layer is a high-resistance semiconductor epitaxial layer, and the semiconductor layer grows in a gas atmosphere containing oxygen atoms. The semiconductor epitaxial wafer provided by the invention can improve leakage current caused by impurities in an interface between the substrate and A buffer layer. The high-resistance semiconductor epitaxial wafer provided by the invention has relatively good device stability and reproducibility when being used for forming a transistor, and can be widely applied to the microwave communication transistors.

Description

technical field [0001] The application relates to a semiconductor epitaxial wafer and its preparation method, and a microwave communication transistor. Specifically, it relates to a preparation method of a high-resistance semiconductor epitaxial wafer, which can improve the leakage current caused by impurities in the interface between the substrate and the buffer layer. The high-resistance semiconductor epitaxial wafer provided by the application has good device stability and reproducibility when forming transistors, and can be widely used in microwave communication transistors. Background technique [0002] With the rapid development of science and technology, the communication between people and the transmission of data have changed from the original wired transmission to wireless transmission. The wireless communication system is a booming field in the current communication technology. Group III / V compound semiconductors meet the needs of modern microwave communication t...

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Problems solved by technology

[0007] The above-mentioned impurity atoms grown on the interface between the substrate and the buffer layer due to the memory effect will have a conductive effect, which will cause leakage current during the epitaxial growth process of the microwave communication transistor, and will cause serious reliability problems during device operation.

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