Forming method of piezoelectric thin film and forming method of bulk acoustic wave resonance device
A technology of piezoelectric thin films and resonant devices, applied in the direction of electrical components, impedance networks, etc.
Pending Publication Date: 2021-12-21
CHANGZHOU CHEMSEMI CO LTD
View PDF0 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
5G mobile communication technology puts forward higher requirements for the passband bandwidth, insertion loss and out-of-band suppression of BAW filters. The above three indicators are related to the electromechanical coupling coefficient and Q value of BAW resonators, so the piezoelectric thin film of BAW resonators The crystal quality needs to be further improved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0037] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.
[0038] As mentioned in the background technology section, 5G mobile communication technology puts forward higher requirements for the passband bandwidth, insertion loss and out-of-band suppression of the BAW filter. The above three indicators are related to the electromechanical coupling coefficient and Q value of the BAW resonator. Therefore, the crystal quality of the BAW resonator piezoelectric film needs to be further improved.
[003...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| wavelength | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The embodiment of the invention provides a forming method of a piezoelectric film and a forming method of a bulk acoustic wave resonance device, and the forming method of the piezoelectric film comprises the steps: providing a first substrate; forming a sacrificial layer on the first substrate; forming a piezoelectric layer on the sacrificial layer; irradiating the first substrate with laser for vaporizing the sacrificial layer; and removing the first substrate to form the piezoelectric film. According to the embodiment of the invention, the sacrificial layer between the transition substrate and the piezoelectric layer is vaporized by adopting the laser with the specific wavelength, and then the transition substrate is removed, so that a layer of flat piezoelectric film can be formed, the piezoelectric film does not comprise crystal grains with obvious turning, the crystal quality is relatively high, and then the electromechanical coupling coefficient and the Q value are relatively high.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular, the invention relates to a method for forming a piezoelectric thin film and a method for forming a bulk acoustic wave resonance device. Background technique [0002] A radio frequency (Radio Frequency, RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a radio frequency filter, a multiplexer, a low noise amplifier, and the like. Among them, the radio frequency filter includes a piezoelectric surface acoustic wave (SurfaceAcoustic Wave, SAW) filter, a piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filter, a micro-electromechanical system (Micro-Electro-Mechanical System, MEMS) filter, Integrated Passive Devices (Integrated PassiveDevices, IPD) filters, etc. [0003] The quality factor value (Q value) of the BAW resonator is relatively high, and the RF filter with low insertion loss and high out-of-band rejection m...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/17
CPCH03H3/02H03H9/02015H03H9/171H03H2003/023
Inventor 韩兴周建
Owner CHANGZHOU CHEMSEMI CO LTD