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Ultra-wideband short-wave infrared LED based on Bi-doped Ag2Se quantum dots and preparation method and application thereof

A technology of short-wave infrared and quantum dots, which is applied in chemical instruments and methods, electrical components, circuits, etc., can solve the problems that it is difficult to realize the full band of SWIR, and achieve enhanced LED luminous efficiency, wide use places, and low power consumption. Effect

Active Publication Date: 2021-12-24
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In previous studies, Ag 2 The emission peak of Se quantum dots can be adjusted from 1080nm to 1330nm, and the full width at half maximum is usually 200nm, but it is difficult to achieve the full SWIR band, especially the strong luminescence at 1400-1700nm

Method used

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  • Ultra-wideband short-wave infrared LED based on Bi-doped Ag2Se quantum dots and preparation method and application thereof
  • Ultra-wideband short-wave infrared LED based on Bi-doped Ag2Se quantum dots and preparation method and application thereof
  • Ultra-wideband short-wave infrared LED based on Bi-doped Ag2Se quantum dots and preparation method and application thereof

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preparation example Construction

[0036] In one embodiment of the present invention, a kind of based on Bi-doped Ag is provided 2 The preparation method of the ultra-broadband short-wave infrared LED of Se quantum dot, comprises the following steps:

[0037](1) Selenium powder is added in the organic phosphine ligand solution to obtain the selenium precursor solution; the silver-containing compound, the metal ligand and the non-coordinating solvent are heated up, and the selenium precursor solution is added simultaneously to react to obtain Ag 2 Se quantum dots;

[0038] (2) dissolving the bismuth-containing compound in a polar solvent, heating and reacting to obtain a Bi precursor solution; 2 The Se quantum dots were heated and reacted with a certain amount of bismuth precursor solution to obtain Bi-doped Ag 2 Se quantum dots;

[0039] (3) Epoxy resin and curing agent are mixed evenly;

[0040] (4) the Bi doping Ag that step (2) obtains 2 Se quantum dots are uniformly mixed with the mixed glue obtained i...

Embodiment 1

[0068] First, 0.005mol selenium powder was added in 5ml trioctyl phosphate, and the solution was clarified at room temperature to obtain a selenium precursor solution. Add 0.002mol of silver acetate, 20ml of dodecanethiol and 10ml of octadecene into a three-necked flask, and raise the temperature to 185°C. At the same time, add 0.3ml of selenium precursor solution and react for 60min to obtain Ag 2 Se quantum dots; 0.3mmol bismuth acetate was dissolved in 20ml methanol, and after heating for a period of time, a Bi precursor solution was obtained; 0.04mmol Ag 2 Se quantum dots were dissolved in 30ml of toluene and a ml of bismuth precursor solution was added, and reacted at 20°C for 1h to obtain Bi-doped Ag 2 Se quantum dots; according to epoxy resin: curing agent = 1:1 ratio mixed evenly; according to Ag 2 Se quantum dots: mixed glue = 1:3 and mixed evenly to obtain a powder-glue mixture; point the powder-glue mixture onto the chip, seal the LED and dry and cure at 100°C.

...

Embodiment 2

[0080] First, 0.005mol selenium powder was added in 5ml trioctyl phosphate, and the solution was clarified at room temperature to obtain a selenium precursor solution. Add 0.002mol of silver acetate, 20ml of dodecanethiol and 10ml of octadecene into a three-necked flask, and raise the temperature to 185°C. At the same time, add 0.3ml of selenium precursor solution and react for 60min to obtain Ag 2 Se quantum dots; 0.3mmol bismuth acetate was dissolved in 20ml methanol, and after heating for a period of time, a Bi precursor solution was obtained; 0.04mmol Ag 2 Dissolve Se quantum dots in 30ml toluene and add 1.33ml bismuth precursor solution, heat at b°C for 60min to obtain Bi-doped Ag 2 Se Quantum dots; according to epoxy resin: curing agent = 1:1 ratio mixed evenly; according to Ag 2 Se quantum dots: mixed glue = 1:3 Mix evenly to obtain a powder-glue mixture; point the powder-glue mixture on the chip, seal the LED and dry and cure at 100°C.

[0081] Among them, the reacti...

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Abstract

The invention relates to the technical field of photoelectricity, in particular to an ultra-wideband short-wave infrared LED based on Bi-doped Ag2Se quantum dots and a preparation method and application thereof. The preparation method comprises the following steps of: adding selenium powder into an organic phosphine ligand solution to obtain a selenium precursor solution; heating a silver-containing compound, a metal ligand and a non-coordinating solvent, adding the selenium precursor solution, and reacting to obtain Ag2Se quantum dots; dissolving a bismuth-containing compound in a polar solvent, and heating to obtain a Bi precursor solution; heating the Ag2Se quantum dots and the Bi precursor solution for reaction to obtain Bi-doped Ag2Se quantum dots; and packaging the Bi-doped Ag2Se quantum dots to obtain the light-induced conversion type ultra-wideband short-wave infrared LED. According to the preparation method, the Ag2Se emission wave band is subjected to red shift through bismuth ion doping, light emission of the Ag2Se quantum dots in the wave band of 1400-1700 nm is enhanced, ultra-wideband light emission of the Ag2Se quantum dots in the SWIR full-wave band is achieved, and an ultra-wideband tunable light-induced conversion type short-wave infrared LED is prepared by combining the Ag2Se quantum dots with a blue light LED chip and has wide application prospects in short-wave infrared spectra.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a Bi-doped Ag 2 Ultra-broadband short-wave infrared LED of Se quantum dots and its preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily to be regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Short-wave infrared (SWIR, 900-1700nm) spectroscopy has been widely used in food safety analysis, non-invasive health detection, crop and environmental detection, etc. Biological components such as water, protein, and lipids have strong absorption in the SWIR band, C-H, N-H and O-H bonds present specific molecular vibrations in the SWIR region, and pollutant particles such as dust and smoke have...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88H01L33/50
CPCC09K11/88H01L33/504
Inventor 高雯曹心怡王丽平刘振华唐波
Owner SHANDONG NORMAL UNIV
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