Chemical mechanical polishing cleaning solution and use method thereof

A chemical machinery and cleaning liquid technology, applied in the field of cleaning liquid, can solve the problems of reducing cleaning work efficiency, adverse production efficiency, increasing the complexity of cleaning process, etc., to achieve the effect of simple cleaning work and improving work efficiency

Pending Publication Date: 2022-01-04
万华化学集团电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on this, the current cleaning solution can only be used to clean one of the wafer or the polishing pad, and cannot satisfy the cleaning of the wafer and the polishing pad at the same time, so that the cleaning of the wafer and the polishing pad can be performed in two different ways. The cleaning liquid process is carried out, which increases the complexity of the cleaning process, reduces the efficiency of the cleaning work, and is not conducive to the improvement of production efficiency

Method used

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  • Chemical mechanical polishing cleaning solution and use method thereof
  • Chemical mechanical polishing cleaning solution and use method thereof
  • Chemical mechanical polishing cleaning solution and use method thereof

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Embodiment Construction

[0022] In order to better understand the technical scheme of the present invention, the following examples will further illustrate the method provided by the present invention, but the present invention is not limited to the listed examples, and should also be included in the claims of the present invention any other known changes.

[0023] A chemical mechanical polishing cleaning liquid, comprising complexing agent, surface active agent, wetting agent, pH adjusting agent, and the balance is water.

[0024] Specifically, wherein the complexing agent is inorganic acid, organic acid, organic phosphonic acid, amino acid and / or organic amine, selected from one or more of the following: acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid , citric acid, phosphoric acid, ethylenediaminetetraacetic acid, 2-phosphonic acid butane-1,2,4-tricarboxylic acid, aminotrimethylenephosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylenephosphonic aci...

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Abstract

The invention discloses a chemical mechanical polishing cleaning solution and a use method thereof. The cleaning solution comprises a complexing agent, a surfactant, a wetting agent, a pH regulator and the balance of water. The chemical mechanical polishing cleaning solution is a highly concentrated cleaning solution, and can simultaneously clean a wafer and a polishing pad after chemical mechanical polishing by adjusting the dilution ratio.

Description

technical field [0001] The invention relates to a cleaning solution, in particular to a cleaning solution for wafers and polishing pads after chemical mechanical polishing in semiconductor manufacturing. Background technique [0002] At present, the VLSI chip integration has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, substrates, media, etc. After chemical mechanical planarization. VLSI wiring is transforming from traditional aluminum wiring technology to copper wiring technology. Compared with Al, Cu wiring has the advantages of low resistivity, high electromobility resistance, and short RC delay time, which enables Cu wiring to replace Al as an interconnect metal in semiconductor manufacturing. However, there is no effective plasma etching or wet etching technology for copper to achieve planarization, and chemical mechanical polis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/14C11D1/22C11D1/72C11D1/722C11D1/78C11D3/60C11D3/06C11D3/20C11D3/33C11D3/36C11D3/37
CPCC11D1/78C11D1/146C11D1/22C11D1/72C11D1/722C11D3/2079C11D3/2082C11D3/2086C11D3/33C11D3/364C11D3/365C11D3/06C11D3/2044C11D3/2041C11D3/2065C11D3/3707C11D3/3753C11D3/0047
Inventor 卞鹏程崔晓坤
Owner 万华化学集团电子材料有限公司
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