PSD type transmission gate image sensor capable of reducing feed-forward effect and manufacturing method thereof
An image sensor and transmission gate technology, which is applied in the design of analog integrated circuits and the design of image sensor pixel circuits, can solve problems such as lowering the potential under the gate, increasing chip power consumption, and increasing process complexity, so as to improve SNR, improve The effect of full well capacity
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[0015] This solution is mainly through the heavily doped P-type implantation of the transfer gate TG. According to the basic principles of semiconductor physics, the transfer gate channel potential is related to the transfer gate doping. Specifically, it can be analyzed through the following work function:
[0016] When the polysilicon gate is heavily doped with P-type, the Fermi level of the polysilicon gate is close to the top of the valence band, and its work function is greater than that of the P-type substrate:
[0017]
[0018]
[0019] EF pp 、EF pb are the Fermi energy level of P-type doped polysilicon and the Fermi energy level of P-type substrate, N A is the substrate doping concentration. Part of the work function difference between the polysilicon and the substrate falls on the potential difference V between the polysilicon and the substrate surface ms , part of which lands on the space charge region on the substrate surface, so that the potential differenc...
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