Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction
A photocatalyst and semiconductor technology, applied in the field of photocatalysis, can solve problems such as low efficiency, achieve the effect of built-in electric field enhancement, flexible energy band structure matching, and improve photocatalytic efficiency
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[0063] Example 1
[0064] Semiconductor heterojunction / homogenesis: The first semiconductor layer is 60 nm thick CDS film, 0.5 nm PT as a cocatalyst, the second semiconductor layer is 30 nm Ag 3 PO 4 Thin film, the third semiconductor layer is 30 nm of AG 3 PO 4 The film, the fourth semiconductor layer is a 60 nm thick CDS film, and the conductive layer is a silver-based alloy of φ20 mm, and the first semiconductor layer and the second semiconductor layer are located on the same side of the conductive layer, and the structure is as Image 6 Indicated;
[0065] Main raw materials: silver-based alloy (φ20mm), AG 3 PO 4 Membrane (purity 99%), CDS membrane (purity 99.999%), PT membrane (purity 99.99%);
[0066] The method of preparing semiconductor heterojunction / homogenesis is as follows:
[0067] (1) Silver-based alloy treatment: rinse and dry it with distilled water;
[0068] (2) The silver-based alloy is covered with a large-scale portion of the semi-circular point, leaving the...
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[0093] Example 2
[0094] Its preparation method is in Example 1, and the first semiconductor layer and the second semiconductor layer are located on both sides of the semiconductor transition layer. The semiconductor heterojunction / with Figure 7 Indicated.
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[0095] Example 3
[0096] The preparation method is in Example 1, and the second semiconductor layer is a 120 nm thick Ag of a CDS film having a first semiconductor layer of 100 nm. 3 PO 4 film.
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