Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction

A photocatalyst and semiconductor technology, applied in the field of photocatalysis, can solve problems such as low efficiency, achieve the effect of built-in electric field enhancement, flexible energy band structure matching, and improve photocatalytic efficiency

Pending Publication Date: 2022-01-07
吕锋仔 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For this reason, an object of the present invention is to propose a kind of semiconductor heterojunction/homojunction and its preparation method and photocatalyst with it, and this semiconductor heterojunction/homojunction has excellent redox ability, and has maximum Optimized effective active surface, controllable built-in electric field, flexible energy band structure matching and bette

Method used

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  • Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction
  • Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction
  • Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction

Examples

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Example Embodiment

[0063] Example 1

[0064] Semiconductor heterojunction / homogenesis: The first semiconductor layer is 60 nm thick CDS film, 0.5 nm PT as a cocatalyst, the second semiconductor layer is 30 nm Ag 3 PO 4 Thin film, the third semiconductor layer is 30 nm of AG 3 PO 4 The film, the fourth semiconductor layer is a 60 nm thick CDS film, and the conductive layer is a silver-based alloy of φ20 mm, and the first semiconductor layer and the second semiconductor layer are located on the same side of the conductive layer, and the structure is as Image 6 Indicated;

[0065] Main raw materials: silver-based alloy (φ20mm), AG 3 PO 4 Membrane (purity 99%), CDS membrane (purity 99.999%), PT membrane (purity 99.99%);

[0066] The method of preparing semiconductor heterojunction / homogenesis is as follows:

[0067] (1) Silver-based alloy treatment: rinse and dry it with distilled water;

[0068] (2) The silver-based alloy is covered with a large-scale portion of the semi-circular point, leaving the...

Example Embodiment

[0093] Example 2

[0094] Its preparation method is in Example 1, and the first semiconductor layer and the second semiconductor layer are located on both sides of the semiconductor transition layer. The semiconductor heterojunction / with Figure 7 Indicated.

Example Embodiment

[0095] Example 3

[0096] The preparation method is in Example 1, and the second semiconductor layer is a 120 nm thick Ag of a CDS film having a first semiconductor layer of 100 nm. 3 PO 4 film.

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Abstract

The invention discloses a semiconductor heterojunction/homojunction, a preparation method thereof and a photocatalyst with the semiconductor heterojunction/homojunction, the semiconductor heterojunction/homojunction comprises a semiconductor transition layer, a first semiconductor layer and a second semiconductor layer, the semiconductor transition layer comprises a semiconductor layer, the first semiconductor layer is in direct contact with the semiconductor layer in the semiconductor transition layer, the second semiconductor layer is in direct contact with the semiconductor layer in the semiconductor transition layer, and the first semiconductor layer is not in contact with the second semiconductor layer. The thickness of at least one of the first semiconductor layer and the semiconductor layer in direct contact with the first semiconductor layer does not exceed the width of a space charge region of a semiconductor heterojunction/homojunction formed by the first semiconductor layer and the semiconductor layer; and/or the thickness of at least one of the second semiconductor layer and the semiconductor layer in direct contact with the second semiconductor layer does not exceed the space charge region width of semiconductor heterojunction/homojunction formed by the second semiconductor layer and the semiconductor layer. The semiconductor heterojunction/homojunction has the advantages of excellent oxidation reduction capability, maximized effective active surface, controllable built-in electric field, flexible energy band structure matching and good stability.

Description

technical field [0001] The invention is mainly applied in the field of photocatalysis, and specifically relates to a semiconductor heterojunction / homojunction, a preparation method thereof and a photocatalyst having the same. Background technique [0002] In recent years, energy shortage and environmental pollution have become the focus of world attention. Semiconductor photocatalysis technology can use solar energy to decompose water into hydrogen and oxygen, and eliminate various pollutants. It is the most ideal and clean technology, so it has received extensive attention. Among them, photocatalytic water splitting for hydrogen production is particularly valued, because it can use solar energy to directly decompose water into hydrogen and oxygen, which is the easiest and most economical way to produce hydrogen. At the same time, its redox ability can also degrade pollution. Purifying the environment and contributing to the realization of a sustainable society, it has attr...

Claims

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Application Information

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IPC IPC(8): B01J27/185C01B3/04A62D3/17
CPCB01J27/1856B01J35/004C01B3/042A62D3/17Y02E60/36
Inventor 吕锋仔黄文财
Owner 吕锋仔
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