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Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction

A photocatalyst and semiconductor technology, applied in the field of photocatalysis, can solve problems such as low efficiency, achieve the effect of built-in electric field enhancement, flexible energy band structure matching, and improve photocatalytic efficiency

Pending Publication Date: 2022-01-07
吕锋仔 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, an object of the present invention is to propose a kind of semiconductor heterojunction / homojunction and its preparation method and photocatalyst with it, and this semiconductor heterojunction / homojunction has excellent redox ability, and has maximum Optimized effective active surface, controllable built-in electric field, flexible energy band structure matching and better stability, so as to improve the photoconversion efficiency and expand the possibility of photocatalytic system based on semiconductor heterojunction / homojunction Selected photocatalytic materials can further solve the problems in the prior art that photocatalysts can only photolyze water to produce hydrogen or degrade pollutants and have low efficiency when photolytically splitting water

Method used

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  • Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction
  • Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction
  • Semiconductor heterojunction/homojunction, preparation method thereof and photocatalyst with semiconductor heterojunction/homojunction

Examples

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Effect test

Embodiment 1

[0064] Semiconductor heterojunction / homojunction: the first semiconductor layer is a 60nm thick CdS film, 0.5nm Pt is used as a co-catalyst, and the second semiconductor layer is 30nm Ag 3 PO 4 thin film, the third semiconductor layer is 30nm Ag 3 PO 4 thin film, the fourth semiconductor layer is a 60nm thick CdS film, the conductive layer is a silver-based alloy with a diameter of 20mm, and the first semiconductor layer and the second semiconductor layer are located on the same side of the conductive layer, and its structure is as follows Figure 6 shown;

[0065] Main raw materials: silver-based alloy (φ20mm), Ag 3 PO 4 Film material (purity 99%), CdS film material (purity 99.999%), Pt film material (purity 99.99%);

[0066] The method of preparing semiconductor heterojunction / homojunction is as follows:

[0067] (1) Silver-based alloy treatment: rinse with distilled water and dry;

[0068] (2) Cover the bow-shaped part of the silver-based alloy that is larger than th...

Embodiment 2

[0094] Its preparation method is the same as that of Example 1, except that the first semiconductor layer and the second semiconductor layer are located on both sides of the semiconductor transition layer, and the obtained semiconductor heterojunction / homojunction is as follows Figure 7 shown.

Embodiment 3

[0096] Its preparation method is the same as embodiment 1, and difference is that the first semiconductor layer is the CdS film of 100nm, and the second semiconductor layer is the thick Ag of 120nm. 3 PO 4 film.

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Abstract

The invention discloses a semiconductor heterojunction / homojunction, a preparation method thereof and a photocatalyst with the semiconductor heterojunction / homojunction, the semiconductor heterojunction / homojunction comprises a semiconductor transition layer, a first semiconductor layer and a second semiconductor layer, the semiconductor transition layer comprises a semiconductor layer, the first semiconductor layer is in direct contact with the semiconductor layer in the semiconductor transition layer, the second semiconductor layer is in direct contact with the semiconductor layer in the semiconductor transition layer, and the first semiconductor layer is not in contact with the second semiconductor layer. The thickness of at least one of the first semiconductor layer and the semiconductor layer in direct contact with the first semiconductor layer does not exceed the width of a space charge region of a semiconductor heterojunction / homojunction formed by the first semiconductor layer and the semiconductor layer; and / or the thickness of at least one of the second semiconductor layer and the semiconductor layer in direct contact with the second semiconductor layer does not exceed the space charge region width of semiconductor heterojunction / homojunction formed by the second semiconductor layer and the semiconductor layer. The semiconductor heterojunction / homojunction has the advantages of excellent oxidation reduction capability, maximized effective active surface, controllable built-in electric field, flexible energy band structure matching and good stability.

Description

technical field [0001] The invention is mainly applied in the field of photocatalysis, and specifically relates to a semiconductor heterojunction / homojunction, a preparation method thereof and a photocatalyst having the same. Background technique [0002] In recent years, energy shortage and environmental pollution have become the focus of world attention. Semiconductor photocatalysis technology can use solar energy to decompose water into hydrogen and oxygen, and eliminate various pollutants. It is the most ideal and clean technology, so it has received extensive attention. Among them, photocatalytic water splitting for hydrogen production is particularly valued, because it can use solar energy to directly decompose water into hydrogen and oxygen, which is the easiest and most economical way to produce hydrogen. At the same time, its redox ability can also degrade pollution. Purifying the environment and contributing to the realization of a sustainable society, it has attr...

Claims

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Application Information

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IPC IPC(8): B01J27/185C01B3/04A62D3/17
CPCB01J27/1856C01B3/042A62D3/17B01J35/39Y02E60/36
Inventor 吕锋仔黄文财
Owner 吕锋仔
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