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Semiconductor element and manufacturing method thereof

A technology of semiconductors and components, applied in the field of magnetoresistive random access memory and its production, which can solve the problems of susceptibility to temperature changes, power consumption, and insufficient sensitivity

Pending Publication Date: 2022-01-07
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages of the above-mentioned prior art generally include: larger chip area, more expensive manufacturing process, more power consumption, insufficient sensitivity, and susceptibility to temperature changes, etc., and it is necessary to further improve

Method used

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  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof

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Embodiment Construction

[0037] Please refer to Figure 1 to Figure 4 , Figure 1 to Figure 4 A schematic diagram of the manner in which a semiconductor device, or more specifically an MRAM cell, is fabricated for an embodiment of the present invention. Such as figure 1 As shown, first a substrate 12 is provided, such as a substrate 12 made of semiconductor material, wherein the semiconductor material can be selected from silicon, germanium, silicon germanium compound, silicon carbide (silicon carbide), gallium arsenide (gallium arsenide) etc., and a MRAM area 14 and a logic area (not shown) are preferably defined on the substrate 12 .

[0038] The substrate 12 may include active (active) elements such as metal-oxide semiconductor (MOS) transistors, passive (passive) elements, conductive layers, and interlayer dielectric layers (interlayerdielectric, ILD) 16, etc. A dielectric layer covers it. More specifically, the substrate 12 may include planar or non-planar (such as fin structure transistors) a...

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PUM

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Abstract

The invention discloses a semiconductor element and a manufacturing method thereof, and the method for manufacturing the semiconductor element mainly comprises the steps: forming a magnetic tunnelling junction (MTJ) stacking structure on a substrate, then carrying out an etching manufacturing process to remove a part of the MTJ stacking structure to form an MTJ, carrying out a deposition manufacturing process to form a polymer on the side wall of the MTJ, and removing the polymer to form a rough surface on the side wall of the MTJ. In addition, the MTJ includes a fixed layer disposed on the substrate, a barrier layer disposed on the fixed layer, and a free layer disposed on the barrier layer, wherein the rough surface may be disposed on sidewalls of the fixed layer, the barrier layer, and / or the free layer.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a magnetoresistive random access memory (Magnetoresistive Random Access Memory, MRAM) and a manufacturing method thereof. Background technique [0002] It is known that the magnetoresistance (MR) effect is the effect that the resistance of the material changes with the change of the applied magnetic field. The definition of its physical quantity is the resistance difference under the presence or absence of a magnetic field divided by the original resistance, which is used to represent the resistance change. Rate. At present, the magnetoresistance effect has been successfully used in the production of hard disks, and has important commercial application value. In addition, using the characteristics of giant magnetoresistance materials having different resistance values ​​in different magnetization states, it can also be made into magnetic random access...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/22H01L43/12H01L43/02H10N50/01H10N50/80
CPCH10B61/00H10N50/80H10N50/01H10N50/85H10B61/22H10N50/10
Inventor 刘家玮方嘉锋林俊贤
Owner UNITED MICROELECTRONICS CORP