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Method for forming organic nanowire array and organic nanowire array

A technology of organic nanowires and arrays, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., to achieve the effect of reducing difficulty and simple operation

Pending Publication Date: 2022-01-11
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In contrast, most organic molecules such as 8-hydroxyquinoline aluminum and phthalocyanine can spontaneously grow into organic molecular nanowires on the substrate without the assistance of metal catalysts. Therefore, it is impossible to achieve the effect of positioning nanowire growth by positioning catalysts. Finding other effective ways to overcome the problem of localized growth of nanowires without the assistance of metal catalysts

Method used

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  • Method for forming organic nanowire array and organic nanowire array
  • Method for forming organic nanowire array and organic nanowire array
  • Method for forming organic nanowire array and organic nanowire array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] In this example, the 8-hydroxyquinoline aluminum nanowire array 1 is prepared, and the specific process is as follows:

[0081] (1) Take the single crystal M-face sapphire substrate as the raw material, put it into acetone, remove the oil on the surface through an ultrasonic cleaner, and then blow the surface with dry nitrogen; put the dried M-face sapphire substrate into ethanol , remove the residual acetone solvent, and blow the surface with nitrogen; put the dried M-plane sapphire substrate into deionized water, remove the organic solvent on the surface, dry the surface with nitrogen, and put the cleaned M-plane sapphire substrate into In the high-temperature box-type furnace, the temperature was raised to 1600°C at a speed of 5-15°C / min, and the temperature was kept at 1600°C for 10 hours, and then cooled to room temperature with the high-temperature box-type furnace. channel array;

[0082] (2) Adsorb the M-face sapphire substrate with parallel channel arrays in s...

Embodiment 2

[0088] In this example, the 8-hydroxyquinoline aluminum nanowire array 2 is prepared. The difference from Example 1 is that the hole diameter of the hollow mask is 300x300 μm 2 , the hole distance is 200μm. The specific process is:

[0089] (1) Take the single crystal M-face sapphire substrate as the raw material, put it into acetone, remove the oil on the surface through an ultrasonic cleaner, and then blow the surface with dry nitrogen; put the dried M-face sapphire substrate into ethanol , remove the residual acetone solvent, and blow the surface with nitrogen; put the dried M-plane sapphire substrate into deionized water, remove the organic solvent on the surface, dry the surface with nitrogen, and put the cleaned M-plane sapphire substrate into In the high-temperature box-type furnace, the temperature was raised to 1600°C at a speed of 5-15°C / min, and the temperature was kept at 1600°C for 10 hours, and then cooled to room temperature with the high-temperature box-type f...

Embodiment 3

[0096] In this example, the 8-hydroxyquinoline aluminum nanowire array 3 is prepared. The difference from Example 1 is that the hole diameter of the hollow mask is 200x200 μm 2 , the hole distance is 300μm. The specific process is:

[0097] (1) Take the single crystal M-face sapphire substrate as the raw material, put it into acetone, remove the oil on the surface through an ultrasonic cleaner, and then blow the surface with dry nitrogen; put the dried M-face sapphire substrate into ethanol , remove the residual acetone solvent, and blow the surface with nitrogen; put the dried M-plane sapphire substrate into deionized water, remove the organic solvent on the surface, dry the surface with nitrogen, and put the cleaned M-plane sapphire substrate into In the high-temperature box-type furnace, the temperature was raised to 1600°C at a speed of 5-15°C / min, and the temperature was kept at 1600°C for 10 hours, and then cooled to room temperature with the high-temperature box-type f...

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Abstract

The invention belongs to the technical field of nano materials, and discloses a method for forming an organic nanowire array and the organic nanowire array. The method for forming the organic nanowire array comprises the following steps: S1, providing a substrate provided with a channel array, and performing surface hydrophobic treatment on the substrate; and S2, placing a hollow mask plate on the substrate in the step S1, the hollow mask plate being provided with a plurality of hollow through holes, depositing organic nanowire raw materials into the channel array through the through holes, and forming the organic nanowire array. According to the method, the organic nanowire array growing in a directional and positioned mode can be formed, the difficulty of follow-up manufacturing of nanoscale devices is reduced, operation is easy, cost is low, large-scale growth is easy, and the method is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a method for forming an organic nanowire array and the organic nanowire array. Background technique [0002] Organic molecular nanowires refer to one-dimensional structures composed of various organic molecular materials and confined to the nanometer scale in the lateral direction. They combine the excellent properties of organic molecules (such as molecular diversity, high carrier transport efficiency, excellent heat resistance, efficient photoemission ability, high quantum efficiency) and the unique effects induced by the nanowire structure (such as mechanical Flexibility, excellent surface area to volume ratio, and one-dimensional electron transport characteristics), have outstanding advantages in the development of micro-optoelectronic devices and flexible semiconductor devices. [0003] At present, the preparation methods of organic molecular nanowir...

Claims

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Application Information

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IPC IPC(8): C23C14/04C23C14/12C23C14/22C23C14/02H01L51/00H01L51/42B82Y30/00B82Y40/00
CPCC23C14/042C23C14/12C23C14/22C23C14/021C23C14/02B82Y30/00B82Y40/00H10K71/166H10K30/00Y02E10/549
Inventor 许金友赵子豪王兴宇廖记辉张玲玉宋健宋佳迅周国富
Owner SOUTH CHINA NORMAL UNIVERSITY
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