Fluorine plasma injection terminal gallium oxide power diode and production method thereof
A fluorine plasma and power diode technology, applied in the field of ion implantation terminal gallium oxide power diode and its preparation, can solve the problem of large thermal field emission current, etc., and achieve the effect of reducing the peak value of the electric field and improving the breakdown voltage
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0030] See figure 1 , figure 1 It is a schematic structural diagram of a fluorine plasma injection terminal gallium oxide power diode provided by an embodiment of the present invention. As shown in the figure, the fluorine plasma injection terminal gallium oxide power diode of this embodiment includes: stacked sequentially from bottom to top The cathode 1, the substrate layer 2, the drift layer 3 and the anode 4, wherein, the drift layer 3 is provided with several fluorine plasma injection regions 5 at intervals; the substrate layer 2 and the drift layer 3 are Si or Sn doped β-Ga 2 o 3 material, and the doping concentration of the drift layer 3 is lower than that of the substrate layer 2 .
[0031] In this embodiment, fluorine plasma enters the drift layer 3 (Ga 2 o 3 ) to form a high-resistance region to modulate the electric field at the anode terminal and the peak value of the electric field at the edge of the anode to effectively increase the breakdown voltage of the d...
Embodiment 2
[0038] This embodiment provides a preparation method for a fluorine plasma implanted terminal gallium oxide power diode, please refer to figure 2 , figure 2 It is a flow chart of a preparation method of a fluorine plasma implanted terminal gallium oxide power diode provided by an embodiment of the present invention. As shown in the figure, the preparation method includes:
[0039] S1: select the substrate layer, and prepare a drift layer on the upper surface of the substrate layer;
[0040] In this embodiment, optionally, Si or Sn heavily doped β-Ga 2 o 3 As the substrate layer, Si or Sn heavily doped β-Ga 2 o 3 A layer of Si or Sn lightly doped β-Ga is grown on the substrate 2 o 3 As a drift layer, wherein the doping concentration of the drift layer is lower than that of the substrate layer.
[0041] Optionally, the thickness of the drift layer is 2-14 μm, and the doping concentration is 1×10 15 cm -3 -1×10 17 cm -3 .
[0042] Optionally, the doping concentratio...
Embodiment 3
[0052] See Figure 3a-Figure 3d , Figure 3a-Figure 3d It is a flow chart of the preparation process of a fluorine plasma implanted terminal gallium oxide power diode provided by the embodiment of the present invention. This embodiment specifically describes the preparation method of the fluorine plasma injected terminal gallium oxide power diode in the second embodiment.
[0053] 1. Preparation of gallium oxide power diodes with a drift layer thickness of 2 μm
[0054] Step 1. select the substrate layer, and prepare a drift layer on the upper surface of the substrate layer;
[0055] Choose heavily Si-doped β-Ga 2 o 3 As the substrate layer, the doping concentration is 5×10 18 cm -3 , in Si heavily doped β-Ga 2 o 3 Above, using the HVPE process, epitaxially grow a layer of Si lightly doped β-Ga 2 o 3 layer as a drift layer, where the thickness of the drift layer is 2 μm, and the doping concentration of the drift layer is 1×10 15 cm -3 ,Such as Figure 3a shown.
...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Doping concentration | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More