Substrate drying chamber

Abstract

The invention provides a substrate drying chamber. The substrate drying chamber comprises an upper case; a lower case coupled to the upper case to be opened or closed; a substrate placement plate coupled to the lower case and having an upper surface facing the upper case, wherein a central protruding region and an outer region are formed on the upper surface of the upper case; a substrate support that supports the substrate and separates the substrate from the upper surface of the substrate placement plate; an upper supply port for providing a supply path for the drying supercritical fluid; and an integrated supply and discharge port for providing a supply path for an initially pressurized supercritical fluid and a discharge path for a mixed fluid, where an organic solvent is dissolved in the drying supercritical fluid after a drying process performed with the drying supercritical fluid supplied through the upper supply port. According to the invention, the processing time of the fluid drying process is shortened.

Description

technical field [0001] The present invention relates to a substrate drying chamber, and more particularly, wherein during a supercritical fluid drying process, a manipulator is allowed to perform an operation for loading or unloading a substrate while minimizing the remaining space inside the chamber so that the throughput of the supercritical fluid drying process is Substrate drying chamber with increased throughput and reduced processing time. Background technique [0002] A manufacturing process of a semiconductor device includes various processes such as a photolithography process, an etching process, and an ion implantation process, among others. After each process is completed and before starting the next process, a cleaning process and a drying process in which impurities or residues remaining on the substrate surface are removed to clean the substrate surface are performed. [0003] For example, in a substrate cleaning process after an etching process, a chemical so...

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Problems solved by technology

Therefore, there is a problem that the overall structure of the device becomes complicated

[0013] Furthermore, according to related art including Korean Patent Application Publication No. 10-2017-0137243, since the lower supply port 422 for supplying the supercritical fluid for initial pressurization and the discharge port 426 for discharging the supercritical fluid after drying are not Located in the middle of the lower body 420, so when the supercritical fluid is supplied and discharged, the supercritical fluid flows asymmetrically, and thus it is difficult for the supercritical fluid to be supplied and discharged to be uniformly dispersed in the chamber

Therefore, there arises a problem that drying efficiency decreases

[0014] Furthermore, according to related technologies including Korean Patent Application Publication No. 10-2017-0137243, in the process of supplying supercritical fluid for drying, when the temperature inside the chamber becomes lower than a critical point for maintaining a supercritical state, There is a problem that, in a drying process in which an organic solvent is dissolved in a supercritical fluid and discharged to the outside, since the pattern formed on the substrate is wetted by the organic solvent, the pattern formed on the substrate collapses, and supercritical drying efficiency will reduce

In the drying process, the working volume of the chamber is closely related to the throughput, and there is a problem that when the working volume increases, the processing time increases and the throughput decreases

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