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Anti-radiation reinforced high-voltage MOSFET device

A radiation-hardening, high-voltage technology, applied in electrical solid-state devices, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as single-particle burnout, meet the needs of circuit applications, improve the ability to resist single-particle burnout, avoid single-particle burnout, etc. The effect of the single event burnout effect

Pending Publication Date: 2022-02-01
58TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a radiation-resistant hardened high-voltage MOSFET device to solve the problem that traditional high-voltage devices are prone to single-event burnout

Method used

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  • Anti-radiation reinforced high-voltage MOSFET device
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  • Anti-radiation reinforced high-voltage MOSFET device

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Embodiment 1

[0023] The invention provides a radiation-resistant hardened high-voltage MOSFET device, the structure of which is as follows figure 1 As shown, it includes a P-type substrate 11, a buried oxide layer 21, a P-type well region 31, a P-type first heavily doped region 32, a P-type second heavily doped region 33, and a P-type third heavily doped region 34. , N-type drift region 41 , N-type heavily doped region 42 , gate oxide layer 22 and gate polysilicon 52 .

[0024] The buried oxide layer 21 is located above the P-type substrate 11, the P-type second heavily doped region 33 is located above the buried oxide layer 21, and the P-type well region 31 is located on the P-type Above the second heavily doped region 33; the P-type third heavily doped region 34 is located above the inside of the P-type well region 31; the N-type drift region 41 is arranged on the drain of the P-type well region 31 The N-type heavily doped region 42 is respectively arranged on the upper surface of the P...

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Abstract

The invention discloses an anti-radiation reinforced high-voltage MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device, which belongs to the field of semiconductors; a P-type second heavily doped region is arranged below a P-type well region, the P-type second heavily doped region is arranged at an upper interface of a buried oxide layer, and the concentration distribution of an N-type drift region and the P-type well region near the N-type drift region is not influenced, so that the device is consistent with other NMOS (N-channel Metal Oxide Semiconductor) devices in process integration in withstand voltage; and the circuit application requirement can be met. The P-type second heavily-doped region and a P-type third heavily-doped region below the source electrode of the device reduce the base resistance of a parasitic NPN triode, the starting threshold of the parasitic triode of the device in a single-particle radiation environment is improved, and the single-particle burning effect of the device is avoided. And the P-type first heavily doped region and the source N-type heavily doped region which are in contact with the device body adopt a short-circuit structure, so that the extraction path of hole current generated by a single particle is shortened, and the single particle burnout resistance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a radiation-resistant hardened high-voltage MOSFET device. Background technique [0002] In a radiation environment, compared with low-voltage integrated circuits, high-voltage MOSFET devices of high-voltage integrated circuits are more prone to single-event effects due to higher operating voltages and larger inductive and capacitive loads. In gate drivers, high voltage MOSFET devices are used to supply the output current. For high-voltage equipment, the single event effects that receive the most attention are single event burnout and single event gate punching. When the MOSFET is biased in the off state, heavy ions can induce a destructive single-event burn-out effect by impinging on the MOSFET. When ions are incident into the MOSFET device, a large number of electron-hole pairs will be generated, and a transient current will be formed under the dual effects of drift an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/552H01L29/78
CPCH01L23/552H01L29/7801H01L29/7816
Inventor 李燕妃孙家林王蕾丁兵吴建伟洪根深贺琪
Owner 58TH RES INST OF CETC