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Inverted multi-junction solar cell based on GaAs substrate

A multi-junction solar cell and substrate technology, applied in the field of solar photovoltaics, can solve the problems of not being able to obtain crystal-quality InP materials and limited suppression effects, and achieve the effects of reducing material defects, reducing interface stress, and reasonable band gap structure

Pending Publication Date: 2022-02-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA ZHONGSHAN INST
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Problems solved by technology

However, since the lattice constant of InP is significantly larger than that of GaAs, it is necessary to use high and low temperature buffer layers or GaInP composition graded buffer layers to reduce the defects of epitaxial materials when growing InP materials based on GaAs substrates, but the defect suppression effect of these methods is very limited , InP materials with good crystal quality cannot be obtained, so the preparation of GaInP / InP / GaInAs triple-junction solar cells based on GaAs substrates still needs to overcome many technical difficulties

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  • Inverted multi-junction solar cell based on GaAs substrate

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Embodiment Construction

[0015] The present invention will be further described in detail below in conjunction with the embodiments and the accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0016] see figure 1 As shown, this embodiment provides a GaAs substrate-based flip-chip multi-junction solar cell, including: GaAs substrate 10, AlAs lift-off layer 20, GaInP sub-cell 30, graphene / AlSbP multi-junction solar cell stacked sequentially from bottom to top Layer Structure Buffer layer 40 , first tunnel junction 50 , InP subcell 60 , second tunnel junction 70 and GaInAs subcell 80 . The GaAs substrate 10 is a GaAs single wafer with a thickness of 300-800 μm. The thickness of the AlAs peeling layer 20 is 10-50 nm. The total thickness of the GaInP sub-cell 30 is 600-1000 nm, its material lattice constant is the same as that of the GaAs substrate 10 , and its optical absorption band gap is 1.8-1.9 eV. Graphene / AlSbP multilayer structure buffer layer 40 is comp...

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Abstract

The invention discloses an inverted multi-junction solar cell based on a GaAs substrate. The inverted multi-junction solar cell comprises the GaAs substrate, and an AlAs stripping layer, a GaInP sub-cell, a graphene / AlSbP multi-layer structure buffer layer, a first tunnel junction, an InP sub-cell, a second tunnel junction and a GaInAs sub-cell are sequentially arranged on the upper surface of the GaAs substrate from bottom to top according to a layered stacked structure. According to the invention, the interface stress is reduced by using the characteristics of the two-dimensional graphene material, and the epitaxial stress is gradually released in combination with the AlSbP layer with the growing temperature increasing progressively, so that the crystal quality of epitaxial materials such as InP and GaInAs on the GaAs substrate can be improved, the GaInP / InP / GaInAs inverted triple-junction solar cell with more reasonable band gap combination can be obtained based on the GaAs substrate, and then the conversion efficiency of the multi-junction cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaics, in particular to a flip-chip multi-junction solar cell based on a GaAs substrate. Background technique [0002] Multi-junction solar cells made of III_V materials such as GaAs and GaInP can achieve a space conversion efficiency of more than 30%, and have been widely used in solar power systems for space satellites. The mainstream structure of this type of cell is the GaInP / GaInAs / Ge triple-junction solar cell, which has a bandgap combination of 1.9 / 1.4 / 0.67eV on the basis of the overall lattice matching. However, this band gap combination will cause the current of the Ge sub-cell to be much larger than that of other sub-cells, which will limit the improvement of the battery conversion efficiency due to the current limitation of the series structure. [0003] InP is a semiconductor material with a direct bandgap, the bandgap width is 1.34eV, and it is suitable for solar cells. In add...

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Application Information

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IPC IPC(8): H01L31/0687H01L31/0693H01L31/0352
CPCH01L31/0687H01L31/0693H01L31/0352Y02E10/544
Inventor 张小宾王悦辉王可林凯文
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA ZHONGSHAN INST