Novel enhanced GaN HEMT device structure
A device structure and font technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as restricting the development of GaN HEMT lateral and lateral devices, leakage of gate and buffer layers, and increasing device size. Effects of integrated circuit density, reduced device size, and reduced cost
Pending Publication Date: 2022-02-08
GUILIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology
[0003] So far, GaN HEMTs (High Electron Mobility Transistors) are still dominated by lateral devices, but due to the gate electric field concentration effect, current collapse effect, gate and buffer layer leakage current, and large gate-to-drain spacing in lateral devices Device size, etc., restrict the development of GaN HEMT lateral devices
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Embodiment 1
[0030] Embodiment 1, see Fig. 3 (a)~(l):
[0031] The present invention provides the structure of a novel V-shaped groove structure GaN HEMT device, which is prepared by the following steps:
[0032] 1) Form a V-shaped substrate surface, and the doping concentration of the n-type Si substrate is 1.0x10 15 ~5.0x10 15 cm -3 Soak in a selected chemical solution for 60 minutes, and use chemical corrosion to form a regular V-shaped arrangement on the anisotropic Si substrate surface of the crystal, as shown in Figure 3(a);
[0033] 2) Form a V-shaped GaN buffer layer, use metal organic chemical vapor deposition (MOCVD) to epitaxially grow a doped n-type GaN buffer layer on the V-shaped surface of the Si substrate with a thickness of 50-200 nm, and the epitaxy pressure and temperature are 100- 200Torr, 1100-1150℃, see Figure 3(b);
[0034] 3) Forming an AlGaN barrier layer, using MOCVD to grow an AlGaN barrier layer on the V-shaped GaN buffer layer, wherein the thickness of the ...
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Abstract
The invention provides a novel GaN HEMT device structure with a V-shaped groove structure and a preparation method thereof.l The concentration of two-dimensional electron gas (2DEG) formed by AlGaN / GaN heterojunctions on the two sides of the gate electrode is controlled by applying voltage to the gate electrode led out from the V-shaped waist part, so that the on-off state of the device is regulated and controlled. and the current on the two sides is transmitted to the Si substrate from the V-shaped bottom, and the Si substrate is in contact with the drain electrode of the bottommost back substrate, so that the GaN HEMT device with the V-shaped groove structure for current transmission is formed by regulating and controlling the conduction of the source electrode and the drain electrode through the gate electrode. The invention provides the novel GaN HEMT device with the V-shaped groove structure on the basis of a traditional vertical structure so as to overcome the defects of an existing structure.
Description
technical field [0001] The invention relates to the technical field of electronic component manufacturing, in particular to a GaN HEMT (gallium nitride high electron mobility transistor) device structure with a V-shaped groove structure. Background technique [0002] Gallium Nitride (GaN) wide bandgap material, as a third-generation semiconductor, has been researched since it was invented in the 1990s because of its advantages such as high critical breakdown electric field, high electron mobility, and large bandgap width. hotspot. [0003] So far, GaN HEMTs (High Electron Mobility Transistors) are still dominated by lateral devices, but due to the gate electric field concentration effect, current collapse effect, gate and buffer layer leakage current, and large gate-to-drain spacing in lateral devices Device size, etc., restricts the development of GaN HEMT lateral devices. [0004] Vertical GaN HEMT devices are also known as current aperture vertical electron transistors ...
Claims
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IPC IPC(8): H01L29/778H01L29/06H01L21/335
CPCH01L29/7787H01L29/7788H01L29/0657H01L29/66462
Inventor 周炳翁加付施宁萍毛建达
Owner GUILIN UNIVERSITY OF TECHNOLOGY