B-ZCSv/Cd with B doping, S vacancy and Schottky junction, preparation method and application of B-ZCSv/Cd in production of hydrogen from dye wastewater

A Schottky junction and vacancy technology, applied in the field of photocatalysis, can solve the problems of reducing the activity of photo-splitting water for hydrogen production, slow kinetic reaction rate, etc.

Active Publication Date: 2022-02-11
QINGDAO UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, combining the above three strategies via a one-step reaction to further enhance the Zn x Cd 1-x The photohydrogen production activity of S is rarely reported
[0004] In addition, restricting the photocatalyst Zn x Cd 1-x The reason for the hydrogen producti

Method used

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  • B-ZCSv/Cd with B doping, S vacancy and Schottky junction, preparation method and application of B-ZCSv/Cd in production of hydrogen from dye wastewater
  • B-ZCSv/Cd with B doping, S vacancy and Schottky junction, preparation method and application of B-ZCSv/Cd in production of hydrogen from dye wastewater
  • B-ZCSv/Cd with B doping, S vacancy and Schottky junction, preparation method and application of B-ZCSv/Cd in production of hydrogen from dye wastewater

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] 10mmol Cd(Ac) 2 .2H 2 O, 10mmol Zn(Ac) 2 .2H 2 O and 20 mmol Na 2 S.9H 2 O was dissolved in 60 mL of water and stirred at room temperature to obtain a yellow suspension, which was reacted in a hydrothermal kettle at 200°C for 12 hours to obtain a yellow precipitate, which was centrifuged and dried to obtain Zn x Cd 1-x S precursor. The resulting Zn x Cd 1-x S and NaBH 4 The photocatalyst B-ZCSv / Cd-350 with B-doping, S-vacancy and Schottky junction can be obtained by grinding until uniform in a mortar, heating up to 350 degrees under nitrogen atmosphere and keeping it for 1 hour. Depend on Figure 1A It can be seen that in the prepared B-ZCSv / Cd-350, the diffraction peaks at 26.0°, 27.7°, 29.4°, 38.4°, 45.9°, 50.2° and 54.5° correspond to (100), (002), ( 101), (102), (110), (103) and (112) crystal planes (PDF 89-2943), located at 31.8°, 34.8°, 38.4° corresponding to (002), (100) and (101) of Cd ) crystal plane (PDF 85-1328), indicating that a Schottky junction...

Embodiment 2

[0045] 10mmol Cd(Ac) 2 .2H 2 O, 10mmol Zn(Ac) 2 .2H 2 O and 20 mmol Na 2 S.9H 2 O was dissolved in 60 mL of water and stirred at room temperature to obtain a yellow suspension, which was reacted in a hydrothermal kettle at 200°C for 12 hours to obtain a yellow precipitate, which was centrifuged and dried to obtain Zn x Cd 1-x S precursor. The resulting Zn x Cd 1-x S and NaBH 4 Grind it in a mortar until uniform, raise the temperature to 400 degrees under nitrogen atmosphere and keep it for 1 hour to obtain B-ZCSv / Cd-400, a photocatalyst with B doping, S vacancies and Schottky junction.

[0046] Depend on Figure 2A It can be seen that in the prepared B-ZCSv / Cd-350, the diffraction peaks at 26.0°, 27.7°, 29.4°, 38.4°, 45.9°, 50.2° and 54.5° correspond to (100), (002), ( 101), (102), (110), (103) and (112) crystal planes (PDF 89-2943), located at 31.8°, 34.8°, 38.4° corresponding to (002), (100) and (101) of Cd ) crystal plane (PDF 85-1328), indicating that a Schottk...

Embodiment 3

[0048] 10mmol Cd(Ac) 2 .2H 2 O, 10mmol Zn(Ac) 2 .2H 2 O and 20 mmol Na 2 S.9H 2 O was dissolved in 60 mL of water and stirred at room temperature to obtain a yellow suspension, which was reacted in a hydrothermal kettle at 200°C for 12 hours to obtain a yellow precipitate, which was centrifuged and dried to obtain Zn x Cd 1-x S precursor. The resulting Zn x Cd 1-x S and NaBH 4 Grind it in a mortar until uniform, raise the temperature to 500 degrees under nitrogen atmosphere and hold it for 1 hour to obtain B-ZCSv / Cd-500, a photocatalyst with B doping, S vacancies and Schottky junction.

[0049] Depend on Figure 3A It can be seen that in the prepared B-ZCSv / Cd-350, the diffraction peaks at 26.0°, 27.7°, 29.4°, 38.4°, 45.9°, 50.2° and 54.5° correspond to (100), (002), ( 101), (102), (110), (103) and (112) crystal planes (PDF 89-2943), located at 31.8°, 34.8°, 38.4° corresponding to (002), (100) and (101) of Cd ) crystal plane (PDF 85-1328), indicating that a Schottk...

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Abstract

The invention discloses a photocatalyst for directly producing hydrogen from dye wastewater, namely B-ZCSv/Cd with B doping, S vacancy and Schottky junction and a preparation method of the B-ZCSv/Cd. The photocatalyst is obtained by treating zinc cadmium sulfide with NaBH4 in an inert atmosphere. The method for preparing the catalyst is simple and easy to implement and environment-friendly. When being used as a water photolysis catalyst, the photocatalyst has relatively high activity; when hydrogen is produced in dye wastewater, the activity is further improved, and meanwhile, dye degradation is realized.

Description

technical field [0001] The invention belongs to the field of photocatalysis, and relates to a novel, green, high-efficiency B-ZCSv / Cd photocatalyst and its synthesis method, which are used to directly prepare hydrogen from a dye solution while achieving dye degradation. B-ZCSv / Cd nanomaterials doped with mass junction elements and their synthesis methods. Background technique [0002] The contradiction between the growing energy demand and the fossil energy crisis makes it urgent to develop sustainable and clean energy. Hydrogen energy has become a promising candidate energy source due to its environmental friendliness and high energy density. Photocatalytic water splitting is a green, low-carbon hydrogen production method. At present, the commonly used photocatalyst is TiO 2 , however TiO 2 Only absorbing ultraviolet light limits their large-scale use. It is of great significance to design and prepare a class of highly efficient and stable photocatalysts that can absor...

Claims

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Application Information

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IPC IPC(8): B01J27/04C01B3/04C02F1/30C02F101/30
CPCB01J27/04B01J35/004B01J35/0013C01B3/042C02F1/30C02F2101/308C02F2305/10Y02E60/36
Inventor 王敏姜鲁华许勇
Owner QINGDAO UNIV OF SCI & TECH
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