Positioning processing method for scanning electron microscope shooting of silicon-based negative electrode material
A technology of silicon-based negative electrode materials and scanning electron microscopy, which is applied to the use of wave/particle radiation for material analysis, analysis of materials, circuits, etc., can solve the problems of affecting morphology observation, poor conductivity of silicon-based negative electrode materials, and poor conductivity. Prevent loose particles from floating, facilitate uniform export, and increase conductivity
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[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0026] See figure 1 and figure 2 , a method for positioning and processing silicon-based negative electrode materials photographed by a scanning electron microscope, specifically comprising the following steps:
[0027] (1) Prepare the scissors, tweezers, latex gloves, dust-free cloth, ethanol reagent, ear cleaning ball, scanning electron microscope sample stage 1, double-sided conductive carbon tape 2, and the sample to be scanned of the silicon-based nega...
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