Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof

A technology of solar cells and quantum dots, applied in the field of solar cells, can solve problems such as difficult photoelectric conversion efficiency, and achieve the effects of improving photoelectric conversion efficiency, improving photoelectric conversion efficiency, effective separation and transmission

Active Publication Date: 2022-03-04
HUBEI UNIV
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AI-Extracted Technical Summary

Problems solved by technology

Through interface passivation and device structure regulation, the current certification efficiency of PbS semiconductor colloidal quantum...
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Method used

It should be noted that the application's ferroelectric-semiconductor quantum dot coupling enhanced solar cell, by inserting a ferroelectric layer between the n-type window layer and the p-type light absorption layer, the material of the ferroelectric layer is BaTiO3, Any one of Pb(Zr,Ti)O3, (K,Na)NbO3, BiFeO3, Bi0.98Ca0.02Fe0.95Mn0.05O3, the material of the ferroelectric layer has the characteristics of spontaneous polarization, and the external polarization voltage Under the action, the electric dipoles inside the ferroele...
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Abstract

The invention provides a ferroelectric-semiconductor quantum dot coupling enhanced solar cell and a preparation method thereof. According to the ferroelectric polarization enhanced solar cell, the ferroelectric layer is inserted between the n-type window layer and the p-type light absorption layer, the material of the ferroelectric layer is any one of BaTiO3, Pb (Zr, Ti) O3, (K, Na) NbO3, BiFeO3 and Bi0. 98Ca0. 02Fe0. 95Mn0. 05O3, the material of the ferroelectric layer has the characteristic of spontaneous polarization, under the action of external polarization voltage, electric dipoles in the ferroelectric material can be directionally arranged, and after the polarization voltage is removed, the ferroelectric layer has the characteristic of spontaneous polarization. A ferroelectric depolarization electric field still exists in the ferroelectric material, the ferroelectric depolarization electric field in the ferroelectric layer is introduced into the solar cell, and a built-in electric field of the p-n junction and the ferroelectric depolarization electric field are used for jointly separating photon-generated carriers, so that the photoelectric conversion efficiency of the cell is improved.

Application Domain

Final product manufacturePhotovoltaic energy generation +1

Technology Topic

Spontaneous polarizationSemiconductor +8

Image

  • Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof
  • Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof
  • Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof

Examples

  • Experimental program(4)
  • Comparison scheme(3)
  • Effect test(1)

Example Embodiment

[0069] Based on the same inventive concept, the present application also provides a method for preparing a ferroelectric-semiconductor quantum dot coupling enhanced solar cell, including the following steps:
[0070] S1, provide a substrate;
[0071] S2, prepared an n-type window layer on the surface of the substrate;
[0072] S3, the ferroelectric layer is prepared from the surface of the substrate side in the n-type window layer;
[0073] S4, the p-type light absorbing layer is prepared on the surface of the ferroelectric layer away from the substrate side;
[0074] S5, the top electrode is prepared from the surface of the substrate side away from the surface of the substrate.
[0075] In some embodiments, an N-type window layer is prepared by a pulsed laser deposition method, a magnetron sputtering method or a sol gel method.
[0076] Using a pulsed laser deposition method, a magnetron sputtering method or a sol gel method is prepared on the surface of the n-type window layer to obtain a ferroelectric layer;
[0077] The p-type light absorbing layer was prepared by a spin coating method.
[0078] The top electrode was prepared from the surface of the P-type light absorbing layer using a vacuum vapor deposition method, an electron beam evaporation method or a magnetron sputtering method.
[0079] In some embodiments, if the material of the n-type window layer is ZnO, the N-type window layer is prepared by pulsed laser deposition method, and the specific preparation method is: as a target of ZnO ceramic, the substrate temperature is 100 ~ 700 ° C, The pulse laser energy is 200 ~ 600 mJ / pulse, the oxygen pressure is 0 ~ 8Pa, the deposition time is 3 to 60 min, and the n-type window layer is formed on the surface of the substrate;
[0080] If the material of the ferric layer is Bi 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 , Prepared by pulsed laser deposition method, the specific preparation method is: in Bi 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 As the target, the ceramic is controlled to control the substrate temperature of from 500 to 700 ° C, the pulse laser energy is 200 ~ 600 mJ / pulse, the oxygen pressure is 1 to 20 Pa, the deposition time is 3 to 60 min, and the surface of the n-type window layer is prepared to obtain a ferroelectric layer .
[0081] BI used in the above embodiment 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 Ceramic targets are purchased for the market, and this application has not been for BI 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 The ceramic target itself makes improvements.
[0082] In some embodiments, the n-type window layer is prepared on the surface of the substrate, and the high purity nitrogen is blown dry after cleaning the substrate, and then the n-type window layer is prepared; the specific cleaning method is to sequentially with acetone on the substrate. , Unhydrate ethanol, deionized water cleaning, the specific cleaning time of 10 to 20 min, preferably 15 min.
[0083] In some embodiments, if the material of the P-type light absorbing layer is an EDT modified PBS quantum point, the preparation method of the p-type light absorbing layer is:
[0084] Formulated PBS quantum point solution;
[0085] Spin the PBS quantum point solution to the surface of the ferroelectric layer;
[0086] The Surface spin coating EDT solution was naturally formed in the PBS quantum dot layer.
[0087] Then, the PBS quantum dot layer is then spinned to the acetonitrile solution, i.e., the P-type light absorbing layer is obtained.
[0088] Specifically, the preparation method of the p-type light absorbing layer is:
[0089] (a), PBS quantum dot solution with a concentration of 10 to 80 mg / ml was filtered by a filter head of 0.22 μm;
[0090] (b), then take 20 to 100 μl of PBS quantum point solution with a pipette, drip the quantum dot solution on the substrate having a ferroelectric layer, immediately spin coating, the rotary coating instrument rotation is 500 ~ 4000 rpm, the spin coating time is 10 ~ 50S;
[0091] (c), then dropped with an EDT solution (i.e., 1,2-ethylene thionaryiol solution to the substrate) of the PBS quantum point solution (i.e., 1,2-ethylene thiol solution, EDT solution was obtained in acetonitrile, continued to spin coating, and the rotation speed was 500 to 4000 rpm during spin coating, and the spin coating time was 10 to 50 s;
[0092] (d) Continue to drop acetonitrile solution on the substrate of the EDT solution, then spin coated, the rotation speed is 500 ~ 4000 rpm, and the spin coating time is 10 ~ 50s;
[0093] (e), repeat steps (b) to step (d) until the thickness of the EDT modified PBS quantum dot film is achieved;
[0094] (f), the substrate is placed on the heating table at 80 to 110 ° C for 10 min to give a dried EDT modified PBS quantum dot film.
[0095] Specifically, the above PBS quantum dot solution can be purchased in the market, or it can be formulated, and the specific method of formulation is: a precursor (TMS) of sulfur (TMS) in a 120 ° C nitrogen stream environment 2S Fast injection of lead precursors, the reaction was reacted naturally to room temperature, and n-hexane dissolved by the solution was added to 60 ° C, and the PBS quantum dot solution was obtained, and then the PBS quantum dot solution Subsequent filtration.
[0096] In some embodiments, the top electrode has an area of ​​0.001 to 0.1 cm. 2.
[0097] The preparation method of the ferroelectric-semiconductor quantum point coupling enhanced solar cell of the present invention is prepared by pulsed laser deposition, magnetron sputtering or sol gel method to obtain an n-type window layer, a ferroelectric layer, and a spin coating method is The p-type light absorbing layer was obtained, and a vacuum vapor deposition method, an electron beam evaporation method or a magnetron sputtering method was obtained, and the preparation process was simple, and the prepared solar cell has a large-scale open circuit voltage and short circuit current. density.

Example Embodiment

[0099] Example 1
[0100] The present application example provides a ferroelectric-semiconductor quantum point coupling enhanced solar cell, including:
[0101] Substrate;
[0102] N-type window layer, located on the surface of the substrate
[0103] A ferroelectric layer is located on the surface of the N-type window layer away from the substrate side;
[0104] P-type light absorbing layer, which is located on the surface of the ferroelectric layer away from the substrate side;
[0105] The top electrode is located on the surface of the P-type light absorbing layer away from the substrate side;
[0106] Among them, the substrate is an ITO transparent conductive glass substrate, and the n-type window layer is ZnO, and the ferroelectric layer material is BI. 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 , The P-type light absorbing layer is an EDT modified PBS quantum point, and the top electrode is Au.
[0107] The preparation method of the above ferroelectric-semiconductor quantum point coupling enhanced solar cell, including the steps of:
[0108] S1, an ITO conductive glass substrate is provided, and the ITO conductive glass substrate is sequentially placed in acetone, ethanol, deionized water, then blows dry with nitrogen and immediately placed in a vacuum chamber of the pulsed laser deposition system, and then install the ZnO target. Material, BI 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 Target;
[0109] S2, sequentially deposited ZnO film (ie, n-type window layers) and BI by pulsed laser deposition method 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 The specific preparation process conditions of the film (ie, iron), ZnO film are as follows: growth temperature 720 ° C, growth oxygen pressure 3.0Pa, deposition time 22min, laser energy and frequency are 250 mJ / Pulse and 5 Hz; BI 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 The specific preparation conditions of the film are as follows: Growth temperature 720 ° C, growth oxygen pressure 3.0Pa, deposition time is 1 min, laser energy and frequency are 350 mJ / pulse and 5 Hz;
[0110] Preparation of S3, P-type optical absorption layer: (a), PBS quantum dot solution with a formulated concentration of 50 mg / ml is filtered by a filter head of 0.22 μm; (b), then take 25 μl of PBS quantum point solution with pipette gun, Quantum point solution droplets on the preparation of a ferroelectric layer, immediately spin coated, the rotary coating instrument speed is 500 to 4000 rpm, the spin coating time is 10 ~ 50s; (c), then in the spin coated with a PBS quantum point solution The substrate is dropped with an EDT solution having a mass fraction of 0.02%, continuous spin coating, and the rotation speed is 500 to 4000 rpm, and the spin coating time is 10 to 50 s; (d), continued on the substrate of the EDT solution. Add acetonitrile solution, then spin coated, the rotation speed is 500 to 4000 rpm, the spin coating time is 10 to 50 s; (e), repeat steps (b) to step (d) until EDT modified PBS quantum dot film The thickness reaches 260 nm; (f), the substrate is placed in the heating table at 80 to 110 ° C for 10 min, resulting in a dry EDT modified PBS quantum dot film;
[0111] S4, the sample prepared in step S3 is inverted on a square mask version having a size of 0.5 mm × 0.5 mm and placed in a vapor deposition, and then placed in a 0.2g gold wire, vacuum to 10 -4 PA, open heating, to be fully evaporated to the AU line, prepare the AU top electrode.

Example Embodiment

[0112] Example 2
[0113] The present application example provides a ferroelectric-semiconductor quantum point coupling enhanced solar cell, including:
[0114] Substrate;
[0115] N-type window layer, located on the surface of the substrate
[0116] A ferroelectric layer is located on the surface of the N-type window layer away from the substrate side;
[0117] P-type light absorbing layer, which is located on the surface of the ferroelectric layer away from the substrate side;
[0118] The top electrode is located on the surface of the P-type light absorbing layer away from the substrate side;
[0119] Among them, the substrate is an ITO transparent conductive glass substrate, and the n-type window layer is ZnO, and the ferroelectric layer material is BI. 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 , The P-type light absorbing layer is an EDT modified PBS quantum point, and the top electrode is Au.
[0120] The preparation method of the above ferroelectric-semiconductor quantum point coupling enhanced solar cell, including the steps of:
[0121] S1, an ITO conductive glass substrate is provided, and the ITO conductive glass substrate is sequentially placed in acetone, ethanol, deionized water, then blows dry with nitrogen and immediately placed in a vacuum chamber of the pulsed laser deposition system, and then install the ZnO target. Material, BI 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 Target;
[0122] S2, sequentially deposited ZnO film (ie, n-type window layers) and BI by pulsed laser deposition method 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 The specific preparation process conditions of the film (ie, iron), ZnO film are as follows: growth temperature 720 ° C, growth oxygen pressure 3.0Pa, deposition time 22min, laser energy and frequency are 250 mJ / Pulse and 5 Hz; BI 0.98 CA 0.02 FE 0.95 Mn 0.05 O 3 The specific preparation conditions of the film are as follows: Growth temperature 720 ° C, growth oxygen pressure 3.0Pa, deposition time 2min, laser energy and frequency are 350 mJ / pulse and 5 Hz;
[0123] Preparation of S3, P-type optical absorption layer: (a), PBS quantum dot solution with a formulation concentration of 50 mg / ml is filtered by a filter head of 0.22 μm; (b), then take 25 μlpbs quantum point solution with pipette, will quantum The solution drops on the preparation of the substrate having a ferroelectric layer, immediately spin coated, the spin coater rotation speed is 3000 rpm, the spin coating time is 10 ~ 50s; (c), then in the substrate of the PBS quantum point solution The drop-added mass fraction was 0.02% EDT solution, continued to spin coating, and the rotation speed was 3000 rpm during spin coating, and the spin coating time was 25s; (d), the acetonitrile solution continued to drop the acetonitrile solution, and then rotated Apply, rotary coating is 3000 rpm, and the spin coating time is 25 s; (e), repeat steps (b) to step (d) until the EDT modified PBS quantum dot film thickness reaches 260 nm; (f), will The substrate is placed at 90 ° C for 10 min to give a dry EDT modified PBS quantum dot film;
[0124] S4, the sample prepared in step S3 is inverted on a square mask version having a size of 0.5 mm × 0.5 mm and placed in a vapor deposition, and then placed in a 0.2g gold wire, vacuum to 10 -4 PA, open heating, to be fully evaporated to the AU line, prepare the AU top electrode.

PUM

PropertyMeasurementUnit
Thickness50.0 ~ 500.0nm
Thickness5.0 ~ 100.0nm
Area0.001 ~ 0.1cm²

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