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Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof

A technology of solar cells and quantum dots, applied in the field of solar cells, can solve problems such as difficult photoelectric conversion efficiency, and achieve the effects of improving photoelectric conversion efficiency, improving photoelectric conversion efficiency, effective separation and transmission

Active Publication Date: 2022-03-04
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Through interface passivation and device structure regulation, the current certification efficiency of PbS semiconductor colloidal quantum dot-based solar cells has reached 12.01%, but how to further improve its photoelectric conversion efficiency is still a difficult problem

Method used

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  • Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof
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  • Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof

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preparation example Construction

[0069] Based on the same inventive concept, the embodiment of the present application also provides a method for preparing a ferroelectric-semiconductor quantum dot coupling enhanced solar cell, including the following steps:

[0070] S1. Provide substrate;

[0071] S2, preparing an n-type window layer on the surface of the substrate;

[0072] S3. Prepare a ferroelectric layer on the surface of the n-type window layer away from the substrate;

[0073] S4. Prepare a p-type light absorbing layer on the surface of the ferroelectric layer away from the substrate;

[0074] S5. Prepare a top electrode on the surface of the p-type light absorbing layer away from the substrate.

[0075] In some embodiments, the n-type window layer is prepared on the surface of the substrate by pulsed laser deposition, magnetron sputtering or sol-gel method;

[0076] A ferroelectric layer is prepared on the surface of the n-type window layer by a pulsed laser deposition method, a magnetron sputterin...

Embodiment 1

[0100] The embodiment of the present application provides a ferroelectric-semiconductor quantum dot coupling enhanced solar cell, including:

[0101] Substrate;

[0102] n-type window layer, which is located on the surface of the substrate

[0103] a ferroelectric layer located on the surface of the n-type window layer away from the substrate;

[0104] The p-type light absorbing layer is located on the surface of the ferroelectric layer away from the substrate;

[0105] a top electrode, which is located on the surface of the p-type light absorbing layer away from the substrate;

[0106] Among them, the substrate is an ITO transparent conductive glass substrate, the n-type window layer is ZnO, and the ferroelectric layer material is Bi 0.98 Ca 0.02 Fe 0.95 mn 0.05 o 3 , the p-type light-absorbing layer is EDT-modified PbS quantum dots, and the top electrode is Au.

[0107] The preparation method of the above-mentioned ferroelectric-semiconductor quantum dot coupling enh...

Embodiment 2

[0113] The embodiment of the present application provides a ferroelectric-semiconductor quantum dot coupling enhanced solar cell, including:

[0114] Substrate;

[0115] n-type window layer, which is located on the surface of the substrate

[0116] a ferroelectric layer located on the surface of the n-type window layer away from the substrate;

[0117] The p-type light absorbing layer is located on the surface of the ferroelectric layer away from the substrate;

[0118] a top electrode, which is located on the surface of the p-type light absorbing layer away from the substrate;

[0119] Among them, the substrate is an ITO transparent conductive glass substrate, the n-type window layer is ZnO, and the ferroelectric layer material is Bi 0.98 Ca 0.02 Fe 0.95 mn 0.05 o 3 , the p-type light-absorbing layer is EDT-modified PbS quantum dots, and the top electrode is Au.

[0120] The preparation method of the above-mentioned ferroelectric-semiconductor quantum dot coupling enh...

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Abstract

The invention provides a ferroelectric-semiconductor quantum dot coupling enhanced solar cell and a preparation method thereof. According to the ferroelectric polarization enhanced solar cell, the ferroelectric layer is inserted between the n-type window layer and the p-type light absorption layer, the material of the ferroelectric layer is any one of BaTiO3, Pb (Zr, Ti) O3, (K, Na) NbO3, BiFeO3 and Bi0. 98Ca0. 02Fe0. 95Mn0. 05O3, the material of the ferroelectric layer has the characteristic of spontaneous polarization, under the action of external polarization voltage, electric dipoles in the ferroelectric material can be directionally arranged, and after the polarization voltage is removed, the ferroelectric layer has the characteristic of spontaneous polarization. A ferroelectric depolarization electric field still exists in the ferroelectric material, the ferroelectric depolarization electric field in the ferroelectric layer is introduced into the solar cell, and a built-in electric field of the p-n junction and the ferroelectric depolarization electric field are used for jointly separating photon-generated carriers, so that the photoelectric conversion efficiency of the cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell with enhanced ferroelectric polarization and a preparation method thereof. Background technique [0002] Energy shortage is an important problem facing human society. The development of sustainable green energy is the key to solving this problem. As a sustainable green and pollution-free energy source, solar energy has attracted widespread attention. [0003] At present, the efficiency of silicon-based solar cells is close to its theoretical limit, and they are expensive. Therefore, the development of new high-efficiency solar cells is extremely important. In recent years, PbS semiconductor colloidal quantum dot solar cells have attracted extensive attention due to their wide spectral response, solution-preparable, high stability, and low cost. Through interface passivation and device structure regulation, the current certification efficiency of PbS semicondu...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/06H01L31/18
CPCH01L31/035218H01L31/035272H01L31/06H01L31/18Y02E10/50Y02P70/50
Inventor 何云斌陈剑黎明锴卢寅梅李派王紫慧毛佳兴董艳慧
Owner HUBEI UNIV
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