Sensitization method of P-type PbSe photoelectric film
A photoelectric thin film and sensitization technology, applied in chemical instruments and methods, elemental compounds other than selenium/tellurium, circuits, etc., to improve stability and repeatability, simplify sensitization treatment devices, and lower sensitization temperature Effect
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Embodiment 1
[0020] Example 1: The mass fraction of the P-type PbSe photoelectric thin film is 1% to 8% H 2 o 2 Carry out oxidation treatment in the solution, the temperature of the solution is 25°C, soak for 60 minutes, wait until the surface becomes uniform gray-black, take it out, rinse it with deionized water, dry it, and then soak the oxidized P-type PbSe photoelectric thin film in the KI solution Carry out iodination treatment, the concentration of KI solution is 0.01mol~0.1mol, the solution temperature is 25°C, soak for 30min, then add 1ml of 38% concentrated hydrochloric acid, let it stand for 1min, take it out, rinse with deionized water, and dry it (after testing, After the iodination treatment, the iodine atom content on the surface of the P-type PbSe photoelectric thin film accounts for 5% to 65%), and then annealed at 380° C. for 60 minutes in an atmosphere of pure oxygen at an atmospheric pressure.
Embodiment 2
[0021] Embodiment 2: Place the P-type PbSe photoelectric thin film sample in a potassium permanganate solution with a mass fraction of 3%, soak it for 30 minutes at a solution temperature of 25° C., take it out and rinse it with deionized water, dry it, and prepare 0.01 mol of NaI solution 100ml, solution temperature 25°C, soak the sample in the solution for 15min, then add 1ml of 38% concentrated hydrochloric acid, let it stand for 1min, take it out, rinse it with deionized water, dry it, and then put it in an atmosphere of pure oxygen at an atmospheric pressure During the annealing treatment at 380°C for 30min to 120min.
Embodiment 3
[0022] Embodiment 3: P-type PbSe photoelectric thin film samples are placed in a potassium permanganate solution with a mass fraction of 3%, the solution temperature is 25° C., soaked for 30 minutes, taken out, rinsed with deionized water, dried, and prepared 0.02 mol of KIO 3 Solution 100ml, solution temperature 25°C, soak the sample in the solution for 120min, then add 1ml 38% concentrated hydrochloric acid, let it stand for 1min, take it out, rinse it with deionized water, blow dry, and then put it in an atmospheric pressure pure oxygen atmosphere , 380 ℃ annealing treatment 30min ~ 120min.
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