108 results about "Iodine compounds" patented technology

The present invention is a resist composition containing a hypervalent iodine compound, a carboxy-group-containing polymer, and a solvent, where the carboxy-group-containing polymer includes a repeating unit of a carboxylic acid derivative, represented by the following formula (1), and the polymer has a dispersity Mw / Mn of 1.30 or less, where Mw is a weight-average molecular weight and Mn is a number-average molecular weight measured by gel permeation chromatography. This can provide: a non-chemically amplified resist composition excellent in sensitivity and limiting resolution in photolithography using a high-energy beam; a laminate including the resist composition; a patterning process using the resist composition; and a method for manufacturing the resist composition.

The present invention is a method for manufacturing a non-chemically amplified resist composition, including, in the following order, the steps of: (i) placing a carboxy-group-containing polymer, a hypervalent iodine compound, and a solvent in a container and mixing together to prepare a fundamental resist composition; (ii) collecting part of the fundamental resist composition, forming a resist film on a test substrate by using the collected fundamental resist composition, and evaluating a film physical property of the resist film; and (iii) adding an additional material to the fundamental resist composition and mixing together to achieve a target film physical property based on an evaluation result of the step (ii). This can provide: a method for manufacturing a non-chemically amplified resist composition whose quality is controlled to be constant; and a patterning process.

A resist pattern is formed by (i) applying a resist composition comprising a hypervalent iodine compound, a carboxy-containing polymer, and a solvent onto a substrate or an underlying film to form a resist film, (ii) exposing the resist film to high-energy radiation, (iii) baking the exposed resist film, and (iv) dry etching the baked resist film for development.

The invention relates to a resist composition and a pattern forming method. The present invention addresses the problem of providing a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using high-energy rays, and a pattern forming method using the resist composition. [Solution] The resist composition contains a superatomic iodine compound represented by formula (1), a carboxyl group-containing polymer, and a solvent.

Proposed is a photocatalytic complex. The photocatalytic complex includes a photocatalyst, and an iodine compound layer formed on a surface of the photocatalyst to cover the same and containing an iodine compound. The present disclosure enables selective degradation of hydrophilic volatile organic compounds by the use of the photocatalyst coated with the iodine compound.

The invention relates to a resist pattern forming method. The present invention addresses the problem of providing, in optical lithography using high-energy rays, a method for forming a resist pattern, the method comprising a step of developing a resist film after exposure by dry etching to form a positive or negative resist pattern, said resist composition having a non-chemically amplified resist composition having excellent use sensitivity and limit resolution. The solution of the invention is a method for forming a resist pattern, which comprises the following steps: (i) forming a resist film on a substrate or a substrate laminated with an underlayer film by using a resist composition containing a hypervalent iodine compound represented by the following formula (1), (2) or (3), a carboxyl group-containing compound and a solvent; the resist pattern is formed by (ii) exposing the resist film to a high-energy ray, (iii) subjecting the exposed resist film to a heat treatment, and (iv) developing the heat-treated resist film by dry etching.

The invention relates to a resist composition, a laminate, and a pattern forming method. The present invention addresses the problem of providing a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using high-energy rays, and a pattern forming method using the resist composition. The resist composition is characterized by containing a hypervalent iodine compound represented by formula (1), a carboxyl group-containing compound, and a solvent. In the formula, a1 and b1 are integers, b1 is 0-4 when a1 is 0, b1 is 0-6 when a1 is 1, and b1 is 0-8 when a1 is 2. And R11 represents a halogen atom or a C1-10 hydrocarbon group which may contain a heteroatom. R21 represents a halogen atom or a C1-40 hydrocarbon group which may contain a heteroatom. And X is NR31 or S. And R31 represents a hydrogen atom, a halogen atom, or a C1-20 hydrocarbon group which may contain a heteroatom.

A negative resist pattern forming process, comprising: (i) forming a resist film on a substrate using a resist composition containing a hypervalent iodine compound, a carboxylic acid compound, and a solvent; (ii) exposing the resist film with a high-energy radiation; and (iii) developing the exposed resist film using a developer that dissolves an unexposed portion and does not dissolve an exposed portion.

A resist pattern is formed by (i) applying a resist composition comprising a hypervalent iodine compound, a carboxylic acid, and a solvent onto a substrate or an underlying film to form a resist film, (ii) exposing the resist film to high-energy radiation, (iii) baking the exposed resist film, and (iv) dry etching the baked resist film for development.

To provide a non-chemically amplified resist composition excellent in sensitivity and resolution in photolithography using a high-energy ray, and a pattern forming method using the resist composition.SOLUTION: A resist composition comprises a hypervalent iodine compound represented by the formula (1), a carboxy-containing polymer, and a solvent.SELECTED DRAWING: None

The invention relates to the technical field of biomedical materials, in particular to developable hydrogel as well as a preparation method and application thereof. The preparation raw materials of the developable hydrogel at least comprise an iodo-aldehyde polysaccharide derivative and a cross-linking agent; the iodo-aldehyde polysaccharide derivative is obtained by grafting an iodine-containing compound to an aldehyde polysaccharide through a covalent bond. In order to solve the technical problems that the existing developable hydrogel is poor in developing stability, uncontrollable in degradation performance, poor in biological safety and the like, the invention provides the injectable polysaccharide hydrogel capable of self-developing for a long time. An iodine reagent is grafted to aldehyde polysaccharide through a covalent bond to construct a novel polysaccharide derivative, the novel polysaccharide derivative reacts with a cross-linking agent (a multi-amino compound) to form the hydrogel, the obtained hydrogel can maintain the developing effect for a long time, the degradation performance can be precisely regulated and controlled, and a brand new thought is provided for research and development of biomedical materials.

The invention discloses a method for recovering elemental iodine from perfluoroalkyl iodide, which comprises the following steps: (1) mixing perfluoroalkyl iodide and an alkaline solution to form a reaction solution, and heating and stirring to form a deiodinated solution; (2) adjusting the pH value of the deiodinated solution to 6-7 by using an acidic solution, and distilling to obtain an inorganic iodized salt solid; and (3) adding water to dissolve the inorganic iodized salt solid to obtain an inorganic iodized salt solution, adding an acidic solution to maintain the pH value to be strongly acidic, adding an oxidizing agent to carry out an oxidation-reduction reaction, filtering and separating to obtain wet iodine, and drying and dehydrating to obtain the iodine simple substance. The method is used for treating perfluoroiodo alkane which is high in iodine content and difficult to treat, an alkaline solution is adopted for reacting with perfluoroiodo alkane for deiodination, the deiodination solution is subjected to acidification and oxidation reaction to prepare high-purity iodine simple substance, and the iodine simple substance can be directly used as a product to be applied to production of iodine-containing compounds.

This invention provides a resist composition with excellent sensitivity and resolution for photolithography using high-energy rays such as EB and EUV lithography, as well as a laminate and pattern formation method using the resist composition. [Solution] A resist composition characterized by comprising a hypervalent iodine compound represented by the following formula (1), a carboxyl group-containing compound, and a solvent. [Case 1] TIFF2026063668000124.tif25166 (in the formula, R 1 , R 2 Each of these is independently a C1-C10 hydrocarbyl group which may contain a halogen atom or a heteroatom, and may bond to each other to form a ring with the carbonyloxy group to which they are bonded and the atoms between the carbonyloxy groups. 3 , R 4 These are hydrocarbyl groups, each independently containing a halogen atom or a heteroatom, which may bond to each other to form a ring with the iodine atom to which they are bonded and the atoms between the iodine atoms.

This method for producing an iodine-containing compound comprises a process wherein a halogen-containing organic iodide compound and a compound having a reactive carbon-carbon double bond are caused to react with each other in the presence of a compound that is represented by formula (21) or formula (22). In formula (21), R21 represents a hydrogen atom, an iodine atom, or an organic group having from 1 to 20 carbon atoms; R22 represents a hydrogen atom, an iodine atom, an organic group having from 1 to 20 carbon atoms, or a boron-containing group; and A1 represents a hydrogen atom, a chlorine atom, a bromine atom, or an iodine atom. In formula (22), each of R23 and R24 represents a hydrogen atom, an iodine atom, or an organic group having from 1 to 20 carbon atoms; R25 represents a hydrogen atom, an iodine atom, an organic group having from 1 to 20 carbon atoms, or a silicon-containing group; and A2 represents a hydrogen atom, a chlorine atom, a bromine atom, or an iodine atom.

This invention provides a non-chemically amplified resist composition that exhibits excellent sensitivity and resolution in photolithography using high-energy rays, as well as a pattern formation method using the resist composition. [Solution] A resist composition comprising a hypervalent iodine compound represented by formula (1), a carboxyl group-containing compound, and a solvent. TIFF2026086143000141.tif46166 (In the formula, R 11 R is a hydrocarbyl group having 1 to 10 carbon atoms, which may contain a halogen atom or a heteroatom. 21 X is a C1-C40 hydrocarbyl group which may contain a halogen atom or a heteroatom. 31 Or it is S. 31 This is a hydrocarbyl group which may contain a hydrogen atom, a halogen atom, or a heteroatom.

A resist composition comprising a hypervalent iodine compound, an onium salt, a carboxy-containing compound, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a patterning process using the same.

The present invention addresses the problem of providing: a method for producing a non-chemically amplified resist composition in which quality management has been standardized; and a method for forming a pattern. The method for producing a non-chemically amplified resist composition is characterized by comprising, in the following order, (i) a step of mixing a carboxyl group-containing polymer, a hypervalent iodine compound, and a solvent in a container to prepare a resist composition precursor, (ii) a step of collecting a portion of the resist composition precursor, and (iii) a step of drying the resist composition precursor. The present invention relates to a method for producing a resist composition comprising a step (ii) of collecting a resist composition precursor, forming a resist film on a test substrate using the collected resist composition precursor, and reevaluating the film properties of the resist film, and a step (iii) of further adding an additional material to the resist composition precursor to obtain the desired film properties on the basis of the evaluation result of the step (ii), and mixing the additional material with the resist composition precursor.

The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The non-chemically-amplified resist composition can be used in a patterning process. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by EB or EUV lithography, the resist composition exhibits a high sensitivity and resolution.

The invention relates to a laminate, a method for manufacturing the laminate, and a method for forming a pattern. The invention provides a laminate, a method for manufacturing the laminate, and a method for forming a pattern, wherein the laminate has both high sensitivity and high resolution and forms a fine pattern in optical lithography using high-energy rays. [Solution] This laminate is characterized by comprising, in this order, a substrate, a silicon-containing resist underlayer film, and a silicon-containing resist underlayer film composition obtained from a thermally crosslinkable polysiloxane, the thermally crosslinkable polysiloxane contains any one or more of repeating units represented by formulae (1)-(3) and any one or more of repeating units represented by formulae (4)-(6), and the resist film is obtained from the resist composition. The present invention relates to a liquid crystal composition containing: at least one type of super-atomic iodine compound selected from the group consisting of super-atomic iodine compounds represented by formula (7), super-atomic iodine compounds represented by formula (8), and super-atomic iodine compounds represented by formula (9); a carboxyl group-containing compound; and a solvent.

The invention discloses a synthesis method of aliphatic diamine, which comprises the following steps: mixing a hypervalent iodine reagent and aliphatic binary amide as raw materials to form a eutectic system, and then carrying out Hofmann rearrangement reaction to obtain an acetylated diamine intermediate product; wherein the structural formula of the aliphatic binary amide is shown in the specification; wherein n is 2 to 16; and hydrolyzing the obtained acetylated diamine intermediate product to obtain the aliphatic diamine. According to the invention, the hypervalent iodine compound and the binary amide mixture form a eutectic system and are subjected to a rearrangement reaction to obtain the diamine derivative, and the diamine derivative is applied to preparation of aliphatic diamine, so that the method has the characteristics of milder reaction conditions, high yield, simpler and more convenient post-treatment and the like; and a new way is provided for the synthetic reaction in which the eutectic system participates and the preparation of the high-molecular polyamide material monomer.

A method for producing an iodine-containing compound includes reacting a halogen-containing organic iodine compound and a compound containing a reactive carbon-carbon double bond in the presence of a compound of Formula (21) or Formula (22). Each of R21, R23 and R24 represents a hydrogen atom, an iodine atom, or an organic group having from 1 to 20 carbon atoms; R22 represents a hydrogen atom, an iodine atom, an organic group having from 1 to 20 carbon atoms, or a boron-containing group; R25 represents a hydrogen atom, an iodine atom, an organic group having from 1 to 20 carbon atoms, or a silicon-containing group; and each of A1 and A2 represents a hydrogen atom, a chlorine atom, a bromine atom, or an iodine atom.

To provide a resist pattern forming method comprising a step of forming a positive-type or negative-type resist pattern by developing, by dry etching, a resist film after exposure using a non-chemically amplified resist composition excellent in sensitivity and ultimate resolution in photolithography using a high-energy ray.SOLUTION: A resist pattern forming method comprises: (i) forming a resist film on a substrate or on an underlying film of a substrate having the underlying film laminated thereon by using a resist composition comprising at least one hypervalent iodine compound selected from the hypervalent iodine compounds represented by formulae (1) and (2), a carboxyl group-containing polymer, and a solvent; (ii) exposing the resist film to high-energy radiation; (iii) heating the exposed resist film; and (iv) developing the heated resist film by dry etching to form a resist pattern.SELECTED DRAWING: None

The application discloses a synthesis method of a carbamic acid alkyl ester compound, which comprises the following steps: dispersing an alkynyl high-valence iodine compound, a palladium catalyst, an amine, formic acid and a base in a solvent, and then introducing carbon dioxide to perform a reaction, so as to obtain the carbamic acid alkyl ester compound. The synthesis method of the carbamic acid alkyl ester compound has the advantages of cheap and easily obtained raw materials, mild reaction conditions, simple operation, high economy of steps, wide applicable range of substrates, good region selectivity and good functional group tolerance, and is suitable for large-scale industrial application.

The application provides an arylpiperidine compound and a preparation method thereof, and belongs to the technical field of organic synthesis. The arylpiperidine compound has a structure shown in formula Xx. The application takes a commercial and cheap piperidine carboxylic acid compound as a starting material, prepares a redox active ester with an N-hydroxy dicarboxylic imide compound, then undergoes decarboxylation coupling reaction with an aryl boronic acid compound or decarboxylation reduction coupling reaction with an aryl iodine compound, quickly and effectively constructs a connecting arm between C-sp2 (the aryl boronic acid compound or the aryl iodine compound) and C-sp3 (the piperidine), and realizes economical synthesis of the arylpiperidine compound. The raw material adopted by the application is cheap and easy to obtain, avoids using an expensive platinum group noble metal catalyst and a high-pressure reaction condition, and further reduces production cost and adverse effects on the environment.

Provided is a non-chemically amplified resist composition that is excellent in sensitivity and limit resolution in photolithography using high-energy rays, particularly in electron beam (EB) lithography and EUV lithography. 【Solution means】A resist composition characterized by containing at least one hypervalent iodine compound, a carboxy group-containing compound, and a solvent selected from the following formulas (1), (2), and (3). TIFF2026122764000327.tif33108 (In the formula, n1 is 0 to 2, n2 is 0 to 1, and n3 is 0 to 3. R 11 ~R 13 is a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms. X 1 ~X 3 is *-O-X A1 -, or *-X A2 (-R 14 )-C(=O)-. X A1 is a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atoms. X A2 is nitrogen or sulfur. R 14 is a hydrogen atom, a halogen atom, or a hydrocarbyl group having 1 to 20 carbon atoms.)

The invention discloses an aza-helicene compound with high circular polarization luminescence performance and a preparation method and application thereof, and belongs to the technical field of circularly polarized light electric device material preparation, the preparation method comprises the following steps: (1) 2, 9-dichloro-1, 10-phenanthroline and an arylamine compound are subjected to an aromatic nucleophilic substitution reaction to obtain an intermediate compound; and (2) carrying out oxidation ring closing reaction mediated by a hypervalent iodine compound on the intermediate compound to obtain a target compound, namely the aza-helicene compound with high circular polarization luminescence property. The spiral length of aza-helicene is prolonged by using a simple and convenient two-step synthesis method, and excellent circular polarization luminescence performance is realized. The aza-helicene has huge potential of being widely applied to photoelectric devices and other fields. Meanwhile, the invention also develops a thought for the subsequent design and development of more helicene materials, and provides a feasible path.

[Problem] To provide a method with which an organic iodine compound, which is useful as a polymerization initiator or the like, can be produced in an efficient and industrially advantageous manner with good purity. [Solution] Provided is a method for producing an organic iodine compound represented by general formula (II) by reacting a tertiary halogeno compound represented by general formula (I) with an iodide salt in the presence of a Lewis acid. (In the formulae, X denotes a chlorine atom or a bromine atom, and R1 and R2 each independently denote an alkyl group having 1-6 carbon atoms or together denote an alkylene group having 2-6 carbon atoms. EWG denotes an electron-withdrawing group.)

An alkyd-polyester paint which includes an alkyd resin, a polyester resin and three fissure-responsive microcapsules. The first microcapsule contains an epoxy resin, a polythiol and a hypervalent iodine compound. The second microcapsule contains a diamine and a photoinitiator. The third microcapsule contains a phosphine.

To provide a mixture containing a hydrofluorocarbon, a fluoroolefin, an iodide-containing compound and other fluorinated compounds, which has a low ozone depletion potential and a low global warming potential.SOLUTION: Provided are blowing agents for polyurethane and polyisocyanurate foams comprising Z-1-chloro - 2333 - tetrafluoropentene (HCFO - 1224yd (Z)) and cyclopentane in amounts of 65 wt% to 99 wt% and 1 wt% to 35 wt%, respectively. There is further provided a foam formed from a polyurethane or polyisocyanurate foam and a blowing agent comprising Z-l-chloro - 2333 - tetrafluoropentene (HCFO - 1224yd (Z)) and cyclopentane having a low initial lambda value.SELECTED DRAWING: Figure 1

A resist composition comprising a hypervalent iodine compound, a carboxy-containing compound, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.