126 results about "Iodine compounds" patented technology

The invention discloses an iodine compound coated sulfide solid electrolyte as well as a preparation method and application thereof, and relates to the technical field of batteries. The preparation method comprises the following steps: mixing and ball-milling coating liquid and sulfide solid electrolyte powder to obtain a mixture; carrying out solid-liquid separation on the mixture to obtain a solid, washing the solid, drying, and carrying out heat treatment to obtain a sulfide solid electrolyte coated with an iodine compound on the surface; wherein the coating liquid comprises the following components in percentage by mass: 0.1-10% of an iodine compound coating agent and 90-99.9% of a coating auxiliary agent. The surface of the particle can be modified, the dispersion condition of the sulfide electrolyte is improved, and the reaction activity between the sulfide electrolyte and the iodine compound is regulated and controlled; and shear force is provided through ball milling, and uniform liquid phase coating can be realized, so that the forming process of the coating layer is optimized, the thickness and compactness of the coating layer are regulated and controlled, and the interface stability of the sulfide solid electrolyte and the metal lithium negative electrode is improved.

The resist composition exhibits a high contrast, improved maximum resolution, and satisfactory sensitivity and line width roughness (LWR) when processed by lithography using high-energy radiation, especially electron beam (EB) and EUV, and a pattern forming process using the resist composition. The resist composition comprising (A) a base polymer containing a polymer comprising repeat units having an acid labile group and repeat units having a carboxy group, (B) an organic solvent, and (C) a hypervalent iodine compound having formula (1):

The present invention is a resist composition containing a hypervalent iodine compound, a carboxy-group-containing polymer, and a solvent, where the carboxy-group-containing polymer includes a repeating unit of a carboxylic acid derivative, represented by the following formula (1), and the polymer has a dispersity Mw / Mn of 1.30 or less, where Mw is a weight-average molecular weight and Mn is a number-average molecular weight measured by gel permeation chromatography. This can provide: a non-chemically amplified resist composition excellent in sensitivity and limiting resolution in photolithography using a high-energy beam; a laminate including the resist composition; a patterning process using the resist composition; and a method for manufacturing the resist composition.

The invention discloses a regeneration and activation method of an inactivated black phosphorus catalyst, and belongs to the technical field of phosphorus chemical new materials. The method comprises the following steps: placing an inactivated black phosphorus catalyst in a high-temperature area of a separator, separating an inert substance on the surface of the inactivated catalyst from the catalyst by controlling a separation temperature gradient in the separator under a vacuum or inert atmosphere sealing condition, then taking out the catalyst, and mixing the catalyst with iodine or an iodine compound, under the sealing condition of vacuum or inert atmosphere, reacting at 400-550 DEG C for 20-120 minutes, and cooling to 200-350 DEG C within 60-120 minutes, so as to realize the activation of the deactivated catalyst; and the activated catalyst has good reaction activity and very high cycle stability.

The present invention is a method for manufacturing a non-chemically amplified resist composition, including, in the following order, the steps of: (i) placing a carboxy-group-containing polymer, a hypervalent iodine compound, and a solvent in a container and mixing together to prepare a fundamental resist composition; (ii) collecting part of the fundamental resist composition, forming a resist film on a test substrate by using the collected fundamental resist composition, and evaluating a film physical property of the resist film; and (iii) adding an additional material to the fundamental resist composition and mixing together to achieve a target film physical property based on an evaluation result of the step (ii). This can provide: a method for manufacturing a non-chemically amplified resist composition whose quality is controlled to be constant; and a patterning process.

A resist pattern is formed by (i) applying a resist composition comprising a hypervalent iodine compound, a carboxy-containing polymer, and a solvent onto a substrate or an underlying film to form a resist film, (ii) exposing the resist film to high-energy radiation, (iii) baking the exposed resist film, and (iv) dry etching the baked resist film for development.

The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution.

Disclosed is a method for producing an iodine-containing tertiary alcohol ester, the method including: a nucleophilic step for reacting an iodine-containing compound represented by formula (1) with a nucleophilic agent; and an acylation step for adding an acylating agent to the reaction liquid obtained in the nucleophilic step so as to obtain an iodine-containing tertiary alcohol ester. The nucleophilic step and the acylation step are continuously performed without having an isolation step after the nucleophilic step.

The invention relates to a resist composition and a pattern forming method. The present invention addresses the problem of providing a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using high-energy rays, and a pattern forming method using the resist composition. [Solution] The resist composition contains a superatomic iodine compound represented by formula (1), a carboxyl group-containing polymer, and a solvent.

Proposed is a photocatalytic complex. The photocatalytic complex includes a photocatalyst, and an iodine compound layer formed on a surface of the photocatalyst to cover the same and containing an iodine compound. The present disclosure enables selective degradation of hydrophilic volatile organic compounds by the use of the photocatalyst coated with the iodine compound.

The invention relates to a resist pattern forming method. The present invention addresses the problem of providing, in optical lithography using high-energy rays, a method for forming a resist pattern, the method comprising a step of developing a resist film after exposure by dry etching to form a positive or negative resist pattern, said resist composition having a non-chemically amplified resist composition having excellent use sensitivity and limit resolution. The solution of the invention is a method for forming a resist pattern, which comprises the following steps: (i) forming a resist film on a substrate or a substrate laminated with an underlayer film by using a resist composition containing a hypervalent iodine compound represented by the following formula (1), (2) or (3), a carboxyl group-containing compound and a solvent; the resist pattern is formed by (ii) exposing the resist film to a high-energy ray, (iii) subjecting the exposed resist film to a heat treatment, and (iv) developing the heat-treated resist film by dry etching.

The invention relates to a resist composition, a laminate, and a pattern forming method. The present invention addresses the problem of providing a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using high-energy rays, and a pattern forming method using the resist composition. The resist composition is characterized by containing a hypervalent iodine compound represented by formula (1), a carboxyl group-containing compound, and a solvent. In the formula, a1 and b1 are integers, b1 is 0-4 when a1 is 0, b1 is 0-6 when a1 is 1, and b1 is 0-8 when a1 is 2. And R11 represents a halogen atom or a C1-10 hydrocarbon group which may contain a heteroatom. R21 represents a halogen atom or a C1-40 hydrocarbon group which may contain a heteroatom. And X is NR31 or S. And R31 represents a hydrogen atom, a halogen atom, or a C1-20 hydrocarbon group which may contain a heteroatom.

A negative resist pattern forming process, comprising: (i) forming a resist film on a substrate using a resist composition containing a hypervalent iodine compound, a carboxylic acid compound, and a solvent; (ii) exposing the resist film with a high-energy radiation; and (iii) developing the exposed resist film using a developer that dissolves an unexposed portion and does not dissolve an exposed portion.

A resist pattern is formed by (i) applying a resist composition comprising a hypervalent iodine compound, a carboxylic acid, and a solvent onto a substrate or an underlying film to form a resist film, (ii) exposing the resist film to high-energy radiation, (iii) baking the exposed resist film, and (iv) dry etching the baked resist film for development.

To provide a non-chemically amplified resist composition excellent in sensitivity and resolution in photolithography using a high-energy ray, and a pattern forming method using the resist composition.SOLUTION: A resist composition comprises a hypervalent iodine compound represented by the formula (1), a carboxy-containing polymer, and a solvent.SELECTED DRAWING: None

The invention relates to the technical field of biomedical materials, in particular to developable hydrogel as well as a preparation method and application thereof. The preparation raw materials of the developable hydrogel at least comprise an iodo-aldehyde polysaccharide derivative and a cross-linking agent; the iodo-aldehyde polysaccharide derivative is obtained by grafting an iodine-containing compound to an aldehyde polysaccharide through a covalent bond. In order to solve the technical problems that the existing developable hydrogel is poor in developing stability, uncontrollable in degradation performance, poor in biological safety and the like, the invention provides the injectable polysaccharide hydrogel capable of self-developing for a long time. An iodine reagent is grafted to aldehyde polysaccharide through a covalent bond to construct a novel polysaccharide derivative, the novel polysaccharide derivative reacts with a cross-linking agent (a multi-amino compound) to form the hydrogel, the obtained hydrogel can maintain the developing effect for a long time, the degradation performance can be precisely regulated and controlled, and a brand new thought is provided for research and development of biomedical materials.

The invention relates to a negative resist pattern forming method. The invention provides a method for forming a negative resist pattern, which uses a non-chemically amplified resist composition having excellent sensitivity and resolution in lithography using high-energy rays. A negative resist pattern forming method includes: (i) a step of forming a resist film on a substrate using a resist composition including a hypervalent iodine compound, a carboxyl group-containing polymer, and a solvent; (ii) a step for exposing the resist film with a high-energy ray; and (iii) a step for developing the exposed resist film using a developer solution that dissolves the unexposed part but does not dissolve the exposed part.

The invention relates to a negative resist pattern forming method. The present invention addresses the problem of providing a method for forming a negative resist pattern using a non-chemically amplified resist composition having excellent sensitivity and resolution in optical lithography using a high-energy ray. The solution of the problem is a negative resist pattern forming method. The method includes the steps of (i) forming a resist film on a substrate using a resist composition containing a superatomic iodine compound, a carboxylic acid compound, and a solvent, (ii) exposing the resist film to a high-energy ray, and (iii) developing the exposed resist film using a developer that dissolves an unexposed portion and does not dissolve an exposed portion.

The invention relates to a resist composition and a pattern forming method. The present invention provides a non-chemically amplified resist composition having excellent sensitivity and resolution in photolithography using high-energy rays, and a pattern forming method using the resist composition. The resist composition comprises a hypervalent iodine compound represented by the following formula (1), a carboxyl group-containing polymer and a solvent, the carboxyl group-containing polymer contains a repeating unit represented by formula (2), and at least one repeating unit selected from the group consisting of a repeating unit represented by formula (3), a repeating unit represented by formula (4), a repeating unit represented by formula (5), a repeating unit represented by formula (6), and a repeating unit represented by formula (7). # imgabs0 #

A composition comprising an oxidizing agent, phosphoric acid, an organic acid, and an etching control agent, wherein the oxidizing agent comprises hydrogen peroxide and an iodine-containing compound, and the etching control agent comprises a nitrogen-containing compound, and having a pH of less than 1, a method for treating a metal-containing film using the same, and a method for manufacturing an electronic device using the same are provided.

The present invention provides a one-dimensional silicon-doped black phosphorus fiber, a preparation method thereof, and an ultraviolet photoelectric device, comprising: (1) mixing iodine and silicon powder and placing them in a quartz tube, vacuum-sealing the quartz tube, burying the quartz tube in glass powder, heating to 700-900°C, and keeping the temperature, to obtain a silicon-iodine compound; (2) mixing amorphous red phosphorus, tin powder, and a silicon-iodine compound and placing them in a quartz tube, vacuum-sealing the quartz tube, burying the quartz tube in glass powder, heating to 620-650°C, and keeping the temperature; then cooling to 450-500°C and keeping the temperature, to obtain a one-dimensional BP-Si fiber. This method can effectively introduce silicon and realize the controllable growth of one-dimensional BP fiber, on this basis forming a Schottky junction with Ag to improve its photoelectric detection performance, which is conducive to the large-scale production and industrial application of BP-based photoelectric devices.

The invention discloses a method for recovering elemental iodine from perfluoroalkyl iodide, which comprises the following steps: (1) mixing perfluoroalkyl iodide and an alkaline solution to form a reaction solution, and heating and stirring to form a deiodinated solution; (2) adjusting the pH value of the deiodinated solution to 6-7 by using an acidic solution, and distilling to obtain an inorganic iodized salt solid; and (3) adding water to dissolve the inorganic iodized salt solid to obtain an inorganic iodized salt solution, adding an acidic solution to maintain the pH value to be strongly acidic, adding an oxidizing agent to carry out an oxidation-reduction reaction, filtering and separating to obtain wet iodine, and drying and dehydrating to obtain the iodine simple substance. The method is used for treating perfluoroiodo alkane which is high in iodine content and difficult to treat, an alkaline solution is adopted for reacting with perfluoroiodo alkane for deiodination, the deiodination solution is subjected to acidification and oxidation reaction to prepare high-purity iodine simple substance, and the iodine simple substance can be directly used as a product to be applied to production of iodine-containing compounds.

This invention provides a resist composition with excellent sensitivity and resolution for photolithography using high-energy rays such as EB and EUV lithography, as well as a laminate and pattern formation method using the resist composition. [Solution] A resist composition characterized by comprising a hypervalent iodine compound represented by the following formula (1), a carboxyl group-containing compound, and a solvent. [Case 1] TIFF2026063668000124.tif25166 (in the formula, R 1 , R 2 Each of these is independently a C1-C10 hydrocarbyl group which may contain a halogen atom or a heteroatom, and may bond to each other to form a ring with the carbonyloxy group to which they are bonded and the atoms between the carbonyloxy groups. 3 , R 4 These are hydrocarbyl groups, each independently containing a halogen atom or a heteroatom, which may bond to each other to form a ring with the iodine atom to which they are bonded and the atoms between the iodine atoms.

This method for producing an iodine-containing compound comprises a process wherein a halogen-containing organic iodide compound and a compound having a reactive carbon-carbon double bond are caused to react with each other in the presence of a compound that is represented by formula (21) or formula (22). In formula (21), R21 represents a hydrogen atom, an iodine atom, or an organic group having from 1 to 20 carbon atoms; R22 represents a hydrogen atom, an iodine atom, an organic group having from 1 to 20 carbon atoms, or a boron-containing group; and A1 represents a hydrogen atom, a chlorine atom, a bromine atom, or an iodine atom. In formula (22), each of R23 and R24 represents a hydrogen atom, an iodine atom, or an organic group having from 1 to 20 carbon atoms; R25 represents a hydrogen atom, an iodine atom, an organic group having from 1 to 20 carbon atoms, or a silicon-containing group; and A2 represents a hydrogen atom, a chlorine atom, a bromine atom, or an iodine atom.

This invention provides a non-chemically amplified resist composition that exhibits excellent sensitivity and resolution in photolithography using high-energy rays, as well as a pattern formation method using the resist composition. [Solution] A resist composition comprising a hypervalent iodine compound represented by formula (1), a carboxyl group-containing compound, and a solvent. TIFF2026086143000141.tif46166 (In the formula, R 11 R is a hydrocarbyl group having 1 to 10 carbon atoms, which may contain a halogen atom or a heteroatom. 21 X is a C1-C40 hydrocarbyl group which may contain a halogen atom or a heteroatom. 31 Or it is S. 31 This is a hydrocarbyl group which may contain a hydrogen atom, a halogen atom, or a heteroatom.

A resist composition comprising a hypervalent iodine compound, an onium salt, a carboxy-containing compound, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a patterning process using the same.

The present invention addresses the problem of providing: a method for producing a non-chemically amplified resist composition in which quality management has been standardized; and a method for forming a pattern. The method for producing a non-chemically amplified resist composition is characterized by comprising, in the following order, (i) a step of mixing a carboxyl group-containing polymer, a hypervalent iodine compound, and a solvent in a container to prepare a resist composition precursor, (ii) a step of collecting a portion of the resist composition precursor, and (iii) a step of drying the resist composition precursor. The present invention relates to a method for producing a resist composition comprising a step (ii) of collecting a resist composition precursor, forming a resist film on a test substrate using the collected resist composition precursor, and reevaluating the film properties of the resist film, and a step (iii) of further adding an additional material to the resist composition precursor to obtain the desired film properties on the basis of the evaluation result of the step (ii), and mixing the additional material with the resist composition precursor.

The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The non-chemically-amplified resist composition can be used in a patterning process. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by EB or EUV lithography, the resist composition exhibits a high sensitivity and resolution.

The invention relates to a laminate, a method for manufacturing the laminate, and a method for forming a pattern. The invention provides a laminate, a method for manufacturing the laminate, and a method for forming a pattern, wherein the laminate has both high sensitivity and high resolution and forms a fine pattern in optical lithography using high-energy rays. [Solution] This laminate is characterized by comprising, in this order, a substrate, a silicon-containing resist underlayer film, and a silicon-containing resist underlayer film composition obtained from a thermally crosslinkable polysiloxane, the thermally crosslinkable polysiloxane contains any one or more of repeating units represented by formulae (1)-(3) and any one or more of repeating units represented by formulae (4)-(6), and the resist film is obtained from the resist composition. The present invention relates to a liquid crystal composition containing: at least one type of super-atomic iodine compound selected from the group consisting of super-atomic iodine compounds represented by formula (7), super-atomic iodine compounds represented by formula (8), and super-atomic iodine compounds represented by formula (9); a carboxyl group-containing compound; and a solvent.

The invention discloses a synthesis method of aliphatic diamine, which comprises the following steps: mixing a hypervalent iodine reagent and aliphatic binary amide as raw materials to form a eutectic system, and then carrying out Hofmann rearrangement reaction to obtain an acetylated diamine intermediate product; wherein the structural formula of the aliphatic binary amide is shown in the specification; wherein n is 2 to 16; and hydrolyzing the obtained acetylated diamine intermediate product to obtain the aliphatic diamine. According to the invention, the hypervalent iodine compound and the binary amide mixture form a eutectic system and are subjected to a rearrangement reaction to obtain the diamine derivative, and the diamine derivative is applied to preparation of aliphatic diamine, so that the method has the characteristics of milder reaction conditions, high yield, simpler and more convenient post-treatment and the like; and a new way is provided for the synthetic reaction in which the eutectic system participates and the preparation of the high-molecular polyamide material monomer.