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Double-perovskite type near-infrared luminescent material and preparation method thereof

A double perovskite and luminescent material technology, applied in luminescent materials, chemical instruments and methods, etc., can solve the problems of not wide emission band, low conversion efficiency, low output power, etc., and achieve smooth surface, uniform particles, and angular clear effect

Pending Publication Date: 2022-03-18
YUNNAN MINZU UNIV
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  • Description
  • Claims
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Problems solved by technology

At present, the research and development of broadband near-infrared light sources cannot meet all application requirements due to low conversion efficiency, low output power, and not wide emission band. One of the ways to solve the above problems lies in the development of new high-efficiency broadband near-infrared phosphors.

Method used

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  • Double-perovskite type near-infrared luminescent material and preparation method thereof
  • Double-perovskite type near-infrared luminescent material and preparation method thereof
  • Double-perovskite type near-infrared luminescent material and preparation method thereof

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Embodiment 1

[0030] Double perovskite near-infrared luminescent material Rb 2 NaY 1-x f 6 :xCr 3+ The preparation method specifically comprises the following steps:

[0031] (1) Weigh 80-85 parts of rubidium fluoride, 15-20 parts of sodium fluoride, 55-40 parts of yttrium fluoride, and 0-6 parts of chromium fluoride;

[0032] (2) Put the weighed raw materials into a mortar, grind for more than 30 minutes, and make it fully mix;

[0033] (3) Put the uniformly ground raw materials into the tube furnace and react at 650-700°C for 8-10 hours to obtain the double perovskite-type near-infrared luminescent material Rb 2 NaY 1-x f 6 :xCr 3+ .

[0034] figure 1 It is the double perovskite type near-infrared luminescent material Rb of embodiment 1 2 NaY 1-x f 6 :xCr 3+ The XRD diffraction pattern. Depend on figure 1 It can be seen that its diffraction peaks are consistent with the matrix Rb 2 NaYF 6 The diffraction peaks of the standard card (JCPDS No. 74-0044) correspond completely...

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Abstract

The invention discloses a double perovskite type near-infrared luminescent material, the chemical composition is Rb2NaY (1-x) F6: xCr < 3 + >, x is the mole percentage coefficient of doped chromium ions relative to yttrium ions, and 0 lt; x is greater than or equal to 0.15; the preparation method comprises the following steps: (1) weighing 80-85 parts of rubidium fluoride, 15-20 parts of sodium fluoride, 55-40 parts of yttrium fluoride and 0-6 parts of chromium fluoride; (2) adding the weighed rubidium fluoride, sodium fluoride, yttrium fluoride and chromium fluoride into a mortar, and grinding for more than 30 minutes to fully and uniformly mix the raw materials; and (3) putting the ground raw materials into a tubular furnace, and reacting at the high temperature of 650-700 DEG C for 8-10 hours to obtain the product. The luminescent material capable of emitting near-infrared light is prepared by taking positive trivalent transition metal Cr < 3 + > as doping ions and double perovskite fluoride as a matrix.

Description

technical field [0001] The invention relates to the technical field of inorganic functional materials, and more specifically relates to a double perovskite type near-infrared luminescent material and a preparation method thereof. Background technique [0002] Halide double perovskite, general formula A 2 B I B III x 6 (A and B I =Cs, Rb, Ag, K, Na, Li, etc.; B III = Al, Ga, In, Sc, etc.; X = F, Cl, Br or I), which is a dioctahedral symmetric structure derived on the basis of halide lead-based perovskite ([B I x 6 ] and [B III x 6 ]) Alternate arrangement, stable chemical properties, long carrier lifetime, non-toxic, all-inorganic semiconductor materials with excellent photoelectric properties. Double perovskite-type inorganic compounds have stable crystal structure, excellent photoelectric performance, and various synthesis methods. When applied in the field of light emission, they have broad emission peaks, adjustable band gap width, and low cost, so they have attr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/85
CPCC09K11/7705
Inventor 万婧周强卿松张茜汪正良唐怀军郭俊明
Owner YUNNAN MINZU UNIV
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